公开(公告)号：US5017980A

公开(公告)日：1991-05-21

申请号：US494051

申请日：1990-03-15

申请人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

发明人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L29/7883

摘要： An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ratio of control gate to floating gate capacitance. Programming and erasure are provided by the tunnel window area, which is located near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between cells in the wordline direction is by a self-aligned implanted region, in this embodiment.

摘要翻译： 使用与浮栅晶体管合并的增强晶体管构造电可擦除可编程ROM单元或EEPROM单元，其中浮栅晶体管具有小的隧道窗，无接触电池布局，增强了 易于制造和减小电池尺寸。 位线和源极/漏极区域被埋在相对较厚的氧化硅之下，这允许控制栅极与浮动栅极电容的有利比例。 编程和擦除由位于源的通道侧附近或上方的隧道窗口区域提供。 窗口具有比浮动栅极的其余部分更薄的电介质，以允许Fowler-Nordheim隧道。 通过使用专用的漏极或接地线，而不是虚拟接地布局，并且通过使用厚氧化物在位线之间隔离，浮动栅极可以延伸到相邻的位线和隔离区域，从而产生良好的耦合比。 在本实施例中，字线方向上的单元之间的隔离是通过自对准注入区域。

公开(公告)号：US5081055A

公开(公告)日：1992-01-14

申请号：US648248

申请日：1991-01-31

申请人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

发明人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L29/7883

摘要： An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ration of control gate to floating gate capacitance. Programming and erasure are provided by the tunnel window area, which is located near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between cells in the wordline direction is by a self-aligned implanted region, in this embodiment.

摘要翻译： 使用与浮栅晶体管合并的增强晶体管构造电可擦除可编程ROM单元或EEPROM单元，其中浮栅晶体管具有小的隧道窗，以无接触电池布局，增强了 易于制造和减小电池尺寸。 位线和源极/漏极区域被埋在相对厚的氧化硅之下，这允许控制栅极对浮置栅极电容的有利比例。 编程和擦除由位于源的通道侧附近或上方的隧道窗口区域提供。 窗口具有比浮动栅极的其余部分更薄的电介质，以允许Fowler-Nordheim隧道。 通过使用专用的漏极或接地线，而不是虚拟接地布局，并且通过使用厚氧化物在位线之间隔离，浮动栅极可以延伸到相邻的位线和隔离区域，从而产生良好的耦合比。 在本实施例中，字线方向上的单元之间的隔离是通过自对准注入区域。

公开(公告)号：US5012307A

公开(公告)日：1991-04-30

申请号：US494060

申请日：1990-03-15

申请人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

发明人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L29/7883

摘要： An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ratio of control gate to floating gate capacitance. Programming and erasing are provided by the tunnel window are near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between wordlines is also by thick thermal oxide in a preferred embodiment, further improving the coupling ratio. Bitline and wordline spacing may be selected for optimum pitch or aspect ratio. Bitline to substrate capacitance is minimized.

摘要翻译： 使用与浮栅晶体管合并的增强晶体管构造电可擦除可编程ROM单元或EEPROM单元，其中浮栅晶体管具有小的隧道窗，无接触电池布局，增强了 易于制造和减小电池尺寸。 位线和源极/漏极区域被埋在相对较厚的氧化硅之下，这允许控制栅极与浮动栅极电容的有利比例。 隧道窗口提供的编程和擦除靠近或高于源的通道侧。 窗口具有比浮动栅极的其余部分更薄的电介质，以允许Fowler-Nordheim隧道。 通过使用专用的漏极或接地线，而不是虚拟接地布局，并且通过使用厚氧化物在位线之间隔离，浮动栅极可以延伸到相邻的位线和隔离区域，从而产生良好的耦合比。 在优选实施例中，字线之间的隔离也是厚氧化物，进一步提高了耦合比。 可以选择位线和字线间距来获得最佳间距或宽高比。 位线到基板电容最小化。

公开(公告)号：US4823318A

公开(公告)日：1989-04-18

申请号：US239877

申请日：1988-09-02

申请人： Sebastiano D'Arrigo ,  Giuliano Imondi ,  Sung-Wei Lin ,  Manzur Gill

发明人： Sebastiano D'Arrigo ,  Giuliano Imondi ,  Sung-Wei Lin ,  Manzur Gill

IPC分类号： G11C17/00 ,  G11C16/06 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  H01L21/8247 ,  H01L27/10 ,  H01L29/788 ,  H01L29/792 ,  G11C7/00

CPC分类号： G11C16/08 ,  G11C16/12 ,  G11C16/14

摘要： A circuit for applying reading, programming and erasing voltages to a wordline in a floating-gate-type EEPROM cell array comprising four P-channel transistors and two N-channel transistors as well as four switches. The circuit comprises a two-transistor inverter with a feedback transistor and three isolating transistors that prevent excessive currents and voltages from damaging internal and external circuit components.

公开(公告)号：US5177705A

公开(公告)日：1993-01-05

申请号：US402399

申请日：1989-09-05

申请人： David J. McElroy ,  Sebastiano D'Arrigo ,  Manzur Gill ,  Sung-Wei Lin

发明人： David J. McElroy ,  Sebastiano D'Arrigo ,  Manzur Gill ,  Sung-Wei Lin

IPC分类号： G11C16/04 ,  G11C16/10 ,  H01L27/115

CPC分类号： H01L27/115 ,  G11C16/0425 ,  G11C16/10

摘要： A method is described for programming an array of EEPROM cells. Programming occurs through a Fowler-Nordheim tunnel window (34) between a source bitline (24) and a floating gate conductor (42) of a selected cell. The voltages applied to the control gate and to the source are selected to differ sufficiently to cause electrons to be drawn through the tunnel window (34) from the source region (24) to the floating gate conductor (42). The non-selected bitlines have a voltage impressed thereon that is of sufficient value to prevent inadvertent programming of cells in the selected row. The non-selected wordlines (48) have a voltage impressed thereon that is of sufficient value to prevent erasing of programmed non-selected cells.

摘要翻译： 描述了一种用于编程EEPROM单元阵列的方法。 编程通过位于选定单元的源位线（24）和浮动栅极导体（42）之间的Fowler-Nordheim隧道窗口（34）进行。 选择施加到控制栅极和源极的电压以使其不同以使得电子从源极区域（24）通过隧道窗口（34）从浮动栅极导体（42）拉出。 未选择的位线具有施加在其上的电压，其具有足够的值以防止所选行中的单元的无意编程。 未选择的字线（48）具有其上施加的电压，其具有足够的值以防止编程的未选择单元的擦除。

公开(公告)号：US5187683A

公开(公告)日：1993-02-16

申请号：US576307

申请日：1990-08-31

申请人： Manzur Gill ,  Sung-Wei Lin ,  Sebastiano D'Arrigo

发明人： Manzur Gill ,  Sung-Wei Lin ,  Sebastiano D'Arrigo

IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/08 ,  G11C16/10 ,  H01L21/8247 ,  H01L27/115

CPC分类号： G11C16/08 ,  G11C16/10

摘要： A method is described for programming a semiconductor array of EEPROM cells. A selected cell is connected, by definition, to a selected source-column line, a selected drain-column line and a selected wordline. Each deselected memory cell in the array is connected to a deselected source-column line, a deselected drain-column line and/or a deselected wordline. The method includes preselecting first, second, third, fourth and fifth programming voltages such that the second programming voltage is more positive than the first programming voltage and such that the third, fourth and fifth programming voltages are intermediate between the first and second programming voltages. The first programming voltage is applied at least to a selected column line and to each of the same-type deselected column lines. The third programming voltage is applied to the selected wordline and the fourth programming voltage is applied to each deselected wordline. After a pre-charge time interval, the fifth programming voltage is applied to each same-type deselected column line and, after an optional additional pre-charge time interval, the second programming voltage is applied to the selected wordline. After a program time interval, the third programming voltage is applied to the selected wordline and, after an optional discharge time interval, the first programming voltage is applied to each same-type deselected column line. Each deselected wordline is maintained at the fourth programming voltage for an additional discharge time interval. The third, fourth and fifth programming voltages may have the same value.

摘要翻译： 描述了一种用于编程EEPROM单元的半导体阵列的方法。 根据定义，所选择的单元格连接到所选择的源列行，所选的排列列线和所选择的字线。 阵列中的每个取消选择的存储单元连接到未选择的源 - 列线，取消选择的漏 - 列线和/或未选择的字线。 该方法包括预选第一，第二，第三，第四和第五编程电压，使得第二编程电压比第一编程电压更正，并且使得第三，第四和第五编程电压在第一和第二编程电压之间。 至少将第一编程电压施加到所选择的列线和每个相同类型的未选择的列线。 将第三编程电压施加到所选择的字线，并且将第四编程电压施加到每个取消选择的字线。 在预充电时间间隔之后，将第五编程电压施加到每个相同类型的未选择的列线，并且在可选的附加预充电时间间隔之后，将第二编程电压施加到所选择的字线。 在编程时间间隔之后，将第三编程电压施加到所选择的字线，并且在可选的放电时间间隔之后，将第一编程电压施加到每个相同类型的未选择的列线。 每个取消选择的字线保持在第四个编程电压下一个额外的放电时间间隔。 第三，第四和第五编程电压可以具有相同的值。

公开(公告)号：US5156991A

公开(公告)日：1992-10-20

申请号：US648087

申请日：1991-01-31

申请人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

发明人： Manzur Gill ,  Sebastiano D'Arrigo ,  Sung-Wei Lin

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L29/7883 ,  Y10S438/981

摘要： An electrically-erasable, programmable ROM cell, or an EEPROM cell, is constructed using an enhancement transistor merged with a floating-gate transistor, where the floating-gate transistor has a small tunnel window, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. The bitlines and source/drain regions are buried beneath relatively thick silicon oxide, which allows a favorable ratio of control gate to floating gate capacitance. Programming and erasing are provided by the tunnel window are near or above the channel side of the source. The window has a thinner dielectric than the remainder of the floating gate, to allow Fowler-Nordheim tunneling. By using dedicated drain or ground lines, rather than a virtual-ground layout, and by using thick oxide for isolation between bitlines, the floating gate can extend onto adjacent bitlines and isolation area, resulting in a favorable coupling ratio. Isolation between wordlines is also by thick thermal oxide in a preferred embodiment, further improving the coupling ratio. Bitline and wordline spacing may be selected for optimum pitch or aspect ratio. Bitline to substrate capacitance is minimized.

摘要翻译： 使用与浮栅晶体管合并的增强晶体管构造电可擦除可编程ROM单元或EEPROM单元，其中浮栅晶体管具有小的隧道窗，无接触电池布局，增强了 易于制造和减小电池尺寸。 位线和源极/漏极区域被埋在相对较厚的氧化硅之下，这允许控制栅极与浮动栅极电容的有利比例。 隧道窗口提供的编程和擦除靠近或高于源的通道侧。 窗口具有比浮动栅极的其余部分更薄的电介质，以允许Fowler-Nordheim隧道。 通过使用专用的漏极或接地线，而不是虚拟接地布局，并且通过使用厚氧化物在位线之间隔离，浮动栅极可以延伸到相邻的位线和隔离区域，从而产生良好的耦合比。 在优选实施例中，字线之间的隔离也是厚氧化物，进一步提高了耦合比。 可以选择位线和字线间距来获得最佳间距或宽高比。 位线到基板电容最小化。

公开(公告)号：US5100819A

公开(公告)日：1992-03-31

申请号：US618786

申请日：1990-11-27

申请人： Manzur Gill ,  Sebastiano D'Arrigo

发明人： Manzur Gill ,  Sebastiano D'Arrigo

IPC分类号： H01L21/8247 ,  H01L29/788

CPC分类号： H01L27/11517 ,  H01L29/7883

摘要： First and second EEPROM cells have first and second source regions (28a, 28b) formed in a semiconductor layer (12) to be of a second conductivity type opposite the first conductivity type of the layer and to be spaced apart from each other. A field plate conductor (100) is insulatively disposed adjacent, and defines, an inversion region (102), and further is laterally spaced between the first and second source regions (28a, 28b). The inversion region (102) is inverted from the first conductivity type to the second conductivity type upon application of a predetermined voltage to the field plate conductor (100). First and second channel regions (48a, 48b) are defined between the respective source regions (28a28b) and the inversion region (102) and each include floating gate and control gate subchannel regions (60a, 62a, 62b, 60b). First and second floating gate conductors (40a, 40b) are insulatively disposed adjacent respective floating gate subchannel regions (60a , 60b) to control their conductance. A control gate conductor is insulatively disposed adjacent the control gate subchannel regions (62a, 62b) to control their conductance. In another embodiment, the field plate conductor (100) is replaced with a pair of field plate conductors (42a, 42b) that control the conductance of respective subchannel regions (64a, 64b). The field plate conductors (42a, 42b) act to self-align a diffused drain region (46) that replaces the inversion region (102).

摘要翻译： 第一和第二EEPROM单元具有在半导体层（12）中形成为与第一导电类型相反的第二导电类型并且彼此间隔开的第一和第二源极区（28a，28b）。 场平板导体（100）被绝缘地邻近并限定反转区域（102），并且还在第一和第二源极区域（28a，28b）之间横向隔开。 当对场板导体（100）施加预定电压时，反转区域（102）从第一导电类型转换为第二导电类型。 第一和第二通道区域（48a，48b）被限定在各个源极区域（28a + B，28b）和反转区域（102）之间，并且每个包括浮动栅极和控制栅极子通道区域（60a，62a，62b，60b） 。 第一和第二浮栅导体（40a，40b）被绝缘地设置在相邻的浮栅子通道区域（60a，60b）附近，以控制它们的电导。 控制栅极导体与控制栅极子通道区域（62a，62b）相邻地间隔地设置以控制它们的电导。 在另一实施例中，场板导体（100）由控制各个子通道区域（64a，64b）的电导的一对场板导体（42a，42b）代替。 场板导体（42a，42b）用于使取代反转区域（102）的扩散漏极区域（46）自对准。

公开(公告)号：US5173436A

公开(公告)日：1992-12-22

申请号：US722732

申请日：1991-06-27

申请人： Manzur Gill ,  Sebastiano D'Arrigo ,  David J. McElroy

发明人： Manzur Gill ,  Sebastiano D'Arrigo ,  David J. McElroy

IPC分类号： H01L21/28 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC分类号： H01L27/11517 ,  H01L21/28273 ,  H01L21/76202 ,  H01L27/115 ,  H01L29/7883

摘要： An electrically-erasable, electrically-programmable ROM or an EEPROM is constructed using a floating-gate transistor with or without a split gate. The floating-gate transistor may have a self-aligned tunnel window of sublithographic dimension positioned on the opposite side of the source from the channel and drain, in a contact-free cell layout, enhancing the ease of manufacture and reducing cell size. In this cell, the bitlines and source/drain regions are buried beneath relatively thick silicon oxide and the floating gate extends over the thick silicon oxide. Programming and erasing are accomplished by causing electrons to tunnel through the oxide in the tunnel window. The tunnel window has a thinner dielectric than the remainder of the oxides under the floating gate to allow Fowler-Nordheim tunneling. Trenches and ditches are used for electrical isolation between individual memory cells, allowing an increase in cell density.

摘要翻译： 使用具有或不具有分裂栅极的浮栅晶体管构造电可擦除的电可编程ROM或EEPROM。 浮栅晶体管可以具有位于与源极和漏极相反侧的亚光刻尺寸的自对准隧道窗口，在无接触电池布局中，增强了制造的容易性并减小了单元尺寸。 在该单元中，位线和源极/漏极区域被埋在相对较厚的氧化硅之下，并且浮置栅极延伸在厚的氧化硅上。 通过使电子穿过隧道窗中的氧化物来实现编程和擦除。 隧道窗口的电介质比浮动栅极下方的氧化物的电介质薄，以允许Fowler-Nordheim隧道。 沟槽和沟渠用于各个记忆体之间的电隔离，允许增加细胞密度。

公开(公告)号：US5134449A

公开(公告)日：1992-07-28

申请号：US661590

申请日：1991-02-26

申请人： Manzur Gill ,  Sebastiano D'Arrigo

发明人： Manzur Gill ,  Sebastiano D'Arrigo

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521

摘要： An array of nonvolatile memory cells are formed at a face of a semiconductor body, the cells including source regions and including drain regions that are part of a common drain column conductor. Each cell has first and second sub-channel regions between source and drain. The conductivity of the first sub-channel regions of each cell is controlled by a field-plate conductor formed over and insulated from the first sub-channel region. The conductivity of each of the second sub-channel regions is controlled by a floating-gate conductor formed over and insulated from the second sub-channel region. A row line, including control gates, is located above and insulated from the floating gates of the cells for reading, programming and erasing the cells. The field-plate conductor switch provides isolation of the cells during programming.

摘要翻译： 在半导体本体的表面上形成非易失性存储单元的阵列，该单元包括源极区，并且包括作为公共漏极列导体的一部分的漏极区。 每个单元在源极和漏极之间具有第一和第二子沟道区。 每个单元的第一子沟道区的导电性由形成在第一子沟道区上并与第一子沟道区绝缘的场板导体控制。 每个第二子沟道区的导电性由形成在第二子沟道区上并与第二子沟道区绝缘的浮栅导体控制。 包括控制栅极的行线位于单元的浮动栅极的上方并与之隔绝，用于读取，编程和擦除单元。 场板导体开关在编程过程中提供了单元的隔离。