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公开(公告)号：US6152074A
公开(公告)日：2000-11-28
申请号：US905166
申请日：1997-08-01
CPC分类号： C23C14/24 , C23C14/243 , C30B23/02 , C30B23/066
摘要： A multi-beam source for deposition of a material on to a substrate with enhanced deposition rate, uniformity and beam directionality. A plurality of orifices are provided in a head unit having a cavity containing a vapor of the deposition material. The cavity and the vapor contained therein are maintained at a high temperature to increase the deposition rate. The orifices are maintained at the same high temperature and act as heated collimators to produce highly directional beams for deposition of materials into high aspect ratio features. When used in jet vapor deposition techniques, an inert gas flow is introduced into the cavity and forced out thereof through the orifices as jets to transport particles of the deposition material to the substrate.
摘要翻译： 一种用于将材料沉积到衬底上的多光束源，具有增强的沉积速率，均匀性和光束方向性。 在具有包含沉积材料的蒸气的空腔的头单元中设置多个孔。 其中容纳的空腔和蒸汽保持在高温以增加沉积速率。 孔保持在相同的高温，并作为加热准直仪，以产生高度定向的光束，用于将材料沉积到高纵横比特征中。 当用于喷射气相沉积技术时，将惰性气体流引入空腔中并将其通过孔口作为喷射流出，以将沉积材料的颗粒输送到基底。
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2.发明授权Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency 失效准直硬件具有RF偏置环，以增强溅射和/或衬底腔体离子产生效率
公开(公告)号：US5431799A
公开(公告)日：1995-07-11
申请号：US145744
申请日：1993-10-29
IPC分类号： C23C14/34 , H01J37/34 , H01L21/203
CPC分类号： H01J37/32082 , H01J37/3405 , H01J37/3438 , H01J2237/3327
摘要： A plasma deposition system for sputter depositing material from a target onto a wafer, the system including a vacuum chamber; a platform for holding the wafer during plasma processing; a source onto which the target is mounted and for generating a plasma in the chamber during operation; an equipotential conductive plane dividing the chamber into an upper cavity in which the target is located and a lower cavity in which the wafer is located, the equipotential conductive plane permitting material sputtered from the target to pass therethrough; and an upper antenna located inside the upper cavity and surrounding the plasma, the upper antenna for coupling RF power into the source-generated plasma.
摘要翻译： 一种等离子体沉积系统，用于将材料从目标溅射沉积到晶片上，所述系统包括真空室; 用于在等离子体处理期间保持晶片的平台; 其上安装有目标物的源和用于在操作期间在腔室中产生等离子体; 等离子导电平面将腔室分成其中靶位于其中的上空腔和晶片所位于的下空腔，等电位导电平面允许从靶溅射的材料通过; 以及位于上腔体内并围绕等离子体的上天线，用于将RF功率耦合到源产生的等离子体的上天线。
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3.发明授权Temperature clamped anti-contamination and collimating devices for thin film processes 失效用于薄膜工艺的温度夹持抗污染和准直装置
公开(公告)号：US5755936A
公开(公告)日：1998-05-26
申请号：US370047
申请日：1995-01-09
申请人： Ivo J. Raaijmakers
发明人： Ivo J. Raaijmakers
CPC分类号： H01J37/32458 , B23P11/025 , C23C14/541 , C23C14/564 , H01J37/32633 , H01J2237/022 , Y10T29/49865
摘要： In a thin film process system, an anti-contamination device, anti-flake shield or collimator plate, is fit to a process chamber. By maintaining a temperature differential between the chamber body and the device, or between the device and any adapter used to conform the device to the chamber apparatus, the device expands to maintain a substantially sealing press fit to the chamber body. The temperature differential can be maintained even when the process is finished until it is time to remove the device for cleaning or disposal and replacement.
摘要翻译： 在薄膜处理系统中，防污染装置，防鳞片屏蔽或准直板适合于处理室。 通过保持室主体和装置之间或设备与用于使装置与腔室装置一致的任何适配器之间的温度差，装置膨胀以保持与室主体基本上密封的压配合。 即使过程完成，直到有时间去除用于清洁或处置和更换的设备，温度差也可以保持。
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公开(公告)号：US5460689A
公开(公告)日：1995-10-24
申请号：US202477
申请日：1994-02-28
申请人： Ivo J. Raaijmakers , Jaim Nulman
发明人： Ivo J. Raaijmakers , Jaim Nulman
IPC分类号： H05H1/46 , B08B7/00 , C23F4/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/768 , B44C1/22 , C03C15/00
CPC分类号： H01L21/76877 , H01J37/321 , H01L21/02063 , H01L21/31116
摘要： A method of precleaning a wafer including the steps of placing the wafer in a plasma chamber; flowing a gas into the plasma chamber; establishing a plasma in the chamber at a first pressure; after establishing the plasma, plasma etching the wafer at the first pressure for a first period of time; transitioning to a second pressure that is different from the first pressure; plasma etching the wafer at the second pressure for a second period of time; and after the second period of time has elapsed, discontinuing plasma etching at the second pressure.
摘要翻译： 一种预晶化方法，包括将晶片放置在等离子体室中的步骤; 将气体流入等离子体室; 在第一压力下在腔室中建立等离子体; 在建立等离子体之后，在第一压力下等离子体蚀刻晶片第一时间段; 过渡到不同于第一压力的第二压力; 在第二压力下等离子体蚀刻晶片第二时间段; 并且在经过第二时间段之后，在第二压力下停止等离子体蚀刻。
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公开(公告)号：US06368051B2
公开(公告)日：2002-04-09
申请号：US09739948
申请日：2000-12-18
申请人： Ivo J. Raaijmakers
发明人： Ivo J. Raaijmakers
IPC分类号： B65G4907
CPC分类号： C23C14/568 , C23C14/566 , H01L21/67745 , Y10S414/136 , Y10S414/137 , Y10S414/139
摘要： A machine for manufacturing semiconductor devices has a processing chamber for processing the semiconductor wafer. A transfer chamber has at least two positions, one position to facilitate the transfer of a wafer to be processed into the transfer chamber and to facilitate the transfer of a processed wafer from the transfer chamber to the cassette from which the wafer originated. The second position facilitates the transfer of a wafer to and from the processing chamber. A transfer arm simultaneously transfers an unprocessed wafer from the first position to the second position with the transfer of a processed wafer from the second position to the first position.
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公开(公告)号：US6039074A
公开(公告)日：2000-03-21
申请号：US926496
申请日：1997-09-09
IPC分类号： F16K7/16 , F16K11/20 , F16K31/122 , F16K15/18
CPC分类号： F16K31/1221 , F16K11/207 , F16K7/16
摘要： A pressure-induced shut-off valve for a liquid delivery system with a back pressure regulator having a positive shut-off capability is provided. The pressure-induced shut-off valve may incorporate an integrated purge valve or an integrated cross flow nebulizer/vaporizer. The pressure-induced shut-off valve functions as a variable flow restrictor which automatically adjusts itself to provide a constant back pressure in the liquid line.
摘要翻译： 提供了一种用于具有正切断能力的背压调节器的液体输送系统的压力截止阀。 压力导致的截止阀可以包括集成的净化阀或集成的交叉流雾化器/蒸发器。 压力导致的截止阀用作可变流量限制器，其自动调节自身以在液体管线中提供恒定的背压。
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公开(公告)号：US06340415B1
公开(公告)日：2002-01-22
申请号：US09002819
申请日：1998-01-05
申请人： Ivo J. Raaijmakers , Robert S. Busacca , John Lane
发明人： Ivo J. Raaijmakers , Robert S. Busacca , John Lane
IPC分类号： C23C1434
CPC分类号： H01J37/3423 , C23C14/3407 , F28F3/12 , H01J37/3497
摘要： Sputtering target lifetime is enhanced by providing a sputtering target assembly wherein a sputtering target is mounted to a substantially compliant cooling cover plate. The cooling cover plate is preferably fabricated from a plastic, a polymer, or a composite polymer and is provided with a plurality of grooves which form cooling fluid passages when the sputtering target is mounted to the cooling cover plate. These cooling fluid passages may be used to cool the target during sputtering. Because the cooling cover plate is substantially compliant, the sputtering target is free to bow in order to relieve any thermally induced strain produced within the sputtering target during sputtering. The lifetime of the sputtering target is thereby enhanced as both strain induced defect propagation/migration within the sputtering target, and the likelihood of sputtering target/cooling cover plate delamination are reduced.
摘要翻译： 通过提供溅射靶组件来增强溅射靶寿命，其中将溅射靶安装到基本顺从的冷却盖板上。 冷却盖板优选由塑料，聚合物或复合聚合物制成，并且当溅射靶安装到冷却盖板上时，设置有形成冷却流体通道的多个槽。 这些冷却流体通道可用于在溅射期间冷却靶。 由于冷却盖板基本上是顺从的，所以溅射靶是自由的，以便在溅射期间减轻在溅射靶内产生的任何热诱导应变。 由于溅射靶内的应变引起的缺陷传播/迁移以及溅射靶/冷却盖板分层的可能性都降低，溅射靶的寿命因此得到提高。
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公开(公告)号：US06228229B1
公开(公告)日：2001-05-08
申请号：US09049839
申请日：1998-03-27
IPC分类号： C23C1434
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32477
摘要： A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.
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9.发明授权Temperature clamping method for anti-contamination and collimating devices for thin film processes 失效用于薄膜工艺的抗污染和准直装置的温度夹紧方法
公开(公告)号：US5598622A
公开(公告)日：1997-02-04
申请号：US384187
申请日：1995-02-06
申请人： Ivo J. Raaijmakers
发明人： Ivo J. Raaijmakers
CPC分类号： H01J37/32458 , B23P11/025 , C23C14/541 , C23C14/564 , H01J37/32633 , H01J2237/022 , Y10T29/49865
摘要： In a thin film process system, an anti-contamination device, anti-flake shield or collimator plate, is fit to a process chamber. By maintaining a temperature differential between the chamber body and the device, or between the device and any adapter used to conform the device to the chamber apparatus, the device expands to maintain a substantially sealing press fit to the chamber body. The temperature differential can be maintained even when the process is finished until it is time to remove the device for cleaning or disposal and replacement.
摘要翻译： 在薄膜处理系统中，防污染装置，防鳞片屏蔽或准直板适合于处理室。 通过保持室主体和装置之间或设备与用于使装置与腔室装置一致的任何适配器之间的温度差，装置膨胀以保持与室主体基本上密封的压配合。 即使过程完成，直到有时间去除用于清洁或处置和更换的设备，温度差也可以保持。
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公开(公告)号：US06264812B1
公开(公告)日：2001-07-24
申请号：US08559345
申请日：1995-11-15
IPC分类号： C23C1434
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32477
摘要： A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.
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