摘要:
The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.
摘要:
A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.
摘要:
The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.
摘要:
The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.
摘要:
Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
摘要:
The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.
摘要:
The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.
摘要:
The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.