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    RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS
    3.
    发明申请
    RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS 审中-公开
    带有光电转换器的辐射传感器集成在半导体衬底和相应的集成工艺

    公开(公告)号：US20100163759A1

    公开(公告)日：2010-07-01

    申请号：US12649256

    申请日：2009-12-29

    申请人： Maria Eloisa Castagna ,  Salvatore Leonardi ,  Salvatore Abbisso ,  Lidia Maddiona

    发明人： Maria Eloisa Castagna ,  Salvatore Leonardi ,  Salvatore Abbisso ,  Lidia Maddiona

    IPC分类号： H01L31/14 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/18 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  H01L27/1443 ,  H01L31/02165

    摘要： An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.

    摘要翻译： 实施例涉及集成在半导体衬底上并包括至少一个第一和第二光电二极管的传感器，该至少一个第一和第二光电二极管包括在这种半导体衬底中形成的至少一个第一和一个第二pn结，以及至少一个第一和第二反射防止涂层 这样的第一和第二光电二极管的顶部。 这种第一和第二光电二极管的至少一个抗反射涂层包括至少一个第一和第二不同的抗反射层，以制造双层抗反射涂层，其适合于为相应的光电二极管获得在入射到其上的光信号的预定波长的响应峰 传感器。 实施例还涉及这种传感器以及由这种传感器制成的环境光传感器的集成过程。

    Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device
    4.
    发明授权
    Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 有权
    用于在惰性基板上集成至少包括无源元件和有源元件的器件以及相应的集成器件的工艺

    公开(公告)号：US08575720B2

    公开(公告)日：2013-11-05

    申请号：US11803716

    申请日：2007-05-14

    申请人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Francesca Paola Tramontana

    发明人： Salvatore Leonardi ,  Salvatore Coffa ,  Claudia Caligiore ,  Francesca Paola Tramontana

    IPC分类号： H01L27/08

    CPC分类号： H01L21/84 ,  H01L27/12

    摘要： A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.

    摘要翻译： 描述了一种在惰性基板上集成具有至少一个无源部件和一个有源部件的装置的方法。 该方法包括：将保护电介质层沉积在惰性衬底上; 在保护电介质层上形成多晶硅岛; 有源元件在多晶硅岛上的集成; 覆盖电介质层沉积在保护电介质层和有源元件上; 将被动元件集成在覆盖介电层上; 在与所述有源部件的有源区域对应的覆盖介电层中实现的开口中形成第一接触结构; 以及与被动部件对应地形成第二接触结构。 还描述了通过该方法获得的集成装置。

    Thin-film transistor (TFT) device
    5.
    发明授权
    Thin-film transistor (TFT) device 有权
    薄膜晶体管（TFT）器件

    公开(公告)号：US07952104B2

    公开(公告)日：2011-05-31

    申请号：US12564719

    申请日：2009-09-22

    申请人： Salvatore Leonardi ,  Claudia Caligiore

    发明人： Salvatore Leonardi ,  Claudia Caligiore

    IPC分类号： H01L29/04 ,  H01L31/036

    CPC分类号： H01L21/02686 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1281 ,  H01L29/66757

    摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.

    摘要翻译： 一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构 硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。 所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

    Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process
    7.
    发明申请
    Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process 有权
    用于制造薄膜晶体管（TFT）器件和通过该工艺制造的TFT器件的工艺

    公开(公告)号：US20070034872A1

    公开(公告)日：2007-02-15

    申请号：US11478332

    申请日：2006-06-28

    申请人： Salvatore Leonardi ,  Claudia Caligiore

    发明人： Salvatore Leonardi ,  Claudia Caligiore

    IPC分类号： H01L29/04

    CPC分类号： H01L21/02686 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1281 ,  H01L29/66757

    摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.

    摘要翻译： 一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构 硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。 所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

    High-voltage semiconductor device with integrated edge structure and associated manufacturing process
    9.
    发明授权
    High-voltage semiconductor device with integrated edge structure and associated manufacturing process 失效
    具有集成边缘结构和相关制造工艺的高压半导体器件

    公开(公告)号：US5796156A

    公开(公告)日：1998-08-18

    申请号：US671851

    申请日：1996-06-28

    申请人： Salvatore Leonardi ,  Davide Bolognesi

    发明人： Salvatore Leonardi ,  Davide Bolognesi

    IPC分类号： H01L29/06 ,  H01L23/58

    CPC分类号： H01L29/0619 ,  H01L29/0615

    摘要： A semiconductor device including a substrate having a first conductivity type on which are formed first and second epitaxial layers of the same conductivity type of the substrate. The semiconductor device also includes a first diffused region having a second conductivity type formed in a first portion of the first and second epitaxial layers. Said first diffused region defines a first junction with said first and second epitaxial layers. The semiconductor device also comprises an edge structure having the second conductivity type formed in a second portion of the first and second epitaxial layers. The edge structure includes a second diffused region having the second conductivity type formed in the first and second epitaxial layers, said second diffused region defining a second junction with said first and second epitaxial layers. The edge structure also includes a third diffused region of the same conductivity type of the second diffused region formed in the second epitaxial layer, said third diffused region being interposed between the first and the second diffuse regions and defining a third junction with said second epitaxial layer, said third junction being shallower than the first and the second junctions.

    摘要翻译： 一种半导体器件，包括具有第一导电类型的衬底，其上形成有相同导电类型的衬底的第一和第二外延层。 半导体器件还包括形成在第一和第二外延层的第一部分中的具有第二导电类型的第一扩散区域。 所述第一扩散区域限定与所述第一和第二外延层的第一结。 半导体器件还包括在第一和第二外延层的第二部分中形成的具有第二导电类型的边缘结构。 边缘结构包括形成在第一和第二外延层中的具有第二导电类型的第二扩散区域，所述第二扩散区域限定与所述第一和第二外延层的第二结。 边缘结构还包括形成在第二外延层中的与第二扩散区相同导电类型的第三扩散区，所述第三扩散区介于第一和第二扩散区之间，并且与所述第二外延层 所述第三结点比所述第一和第二结点浅。

    Organic electroluminescent device with isolation region for improved light emission and systems including same
    10.
    发明授权
    Organic electroluminescent device with isolation region for improved light emission and systems including same 有权
    具有用于改善发光的隔离区域的有机电致发光器件及包括其的系统

    公开(公告)号：US08405303B2

    公开(公告)日：2013-03-26

    申请号：US11582137

    申请日：2006-10-16

    申请人： Maria Grazia Maglione ,  Chiara Leo ,  Salvatore Leonardi

    发明人： Maria Grazia Maglione ,  Chiara Leo ,  Salvatore Leonardi

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01L27/3246 ,  H01L51/5284

    摘要： An electroluminescent device includes at least first and second radiation emitter devices arranged on a common substrate. Each radiation emitter devise includes a first active layer and a second layer of organic material for generating the radiation, respectively. This device includes isolation means of dielectric material which are at least partially interposed between the first and second active layers to electrically isolate the first layer from the second active layer.

    摘要翻译： 电致发光器件至少包括布置在公共衬底上的第一和第二辐射发射器器件。 每个辐射发射器设备分别包括用于产生辐射的第一有源层和第二有机材料层。 该装置包括介电材料的隔离装置，其至少部分插入在第一和第二有源层之间以将第一层与第二有源层电隔离。