Volatile/Non-Volatile Floating Electrode Logic/Memory Cell
    1.
    发明申请
    Volatile/Non-Volatile Floating Electrode Logic/Memory Cell 有权
    挥发性/非挥发性浮动电极逻辑/存储单元

    公开(公告)号:US20140293678A1

    公开(公告)日:2014-10-02

    申请号:US14233911

    申请日:2012-07-23

    IPC分类号: G11C13/00 H01L27/24 H01L45/00

    摘要: A resistive floating electrode device (RFED) provides a logic cell or non-volatile storage or dynamic or static random access memory on an extremely compact matrix with individual cells scalable to the minimum available lithographic feature size regime by providing atomic switches connected in anti-parallel relationship, preferably with a common inert electrode. Programming is facilitated by limiting current to a compliance current level in order to maintain an OB state from which the cell can be written to either the 0 or 1 state. A perfecting feature of the invention provides for selective operation of a cell as a diode or in a volatile or non-volatile storage mode within the same memory array. A series connection of three or more RFEDs in accordance with the invention having different ON state currents, OFF state currents and reset currents can be used as adaptive, neural or chaotic logic cells.

    摘要翻译: 电阻浮动电极器件(RFED)在非常紧凑的矩阵上提供逻辑单元或非易失性存储器或动态或静态随机存取存储器,其中各个单元通过提供以反并联方式连接的原子开关可扩展到最小可用光刻特征尺寸方案 关系,最好用普通的惰性电极。 通过将电流限制到符合性电流电平来进行编程,以便维持可将单元格写入0或1状态的OB状态。 本发明的完美特征提供了作为二极管的单元的选择性操作或在同一存储器阵列内的易失性或非易失性存储模式中的选择性操作。 根据具有不同ON状态电流,OFF状态电流和复位电流的本发明的三个或更多RFED的串联连接可被用作自适应,神经或混沌逻辑单元。