公开(公告)号：US20050052220A1

公开(公告)日：2005-03-10

申请号：US10658154

申请日：2003-09-08

申请人： Mark Burgener ,  Dylan Kelly ,  James Cable

发明人： Mark Burgener ,  Dylan Kelly ,  James Cable

IPC分类号： H02M3/07 ,  G05F3/02

CPC分类号： H03K3/013 ,  H02M3/07 ,  H02M3/073 ,  H03K3/0315

摘要： A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

摘要翻译： 描述了具有各种方面的电荷泵方法和装置。 通过限制正时钟和负时钟转换速率以及通过限制时钟发生器驱动器电路内的驱动电流以及通过增加某些传输电容器耦合开关的控制节点AC阻抗来降低从电荷泵到其它电路的噪声注入 。 单相时钟可用于控制与电荷泵内的所有有源开关一样多的电容耦合，并且电容耦合可以简化控制传输电容耦合开关的时钟信号的偏置和定时。 方法或装置的这些方面的任何组合可用于在宽范围的电荷泵结构中安静和/或简化电荷泵设计。

公开(公告)号：US20060194567A1

公开(公告)日：2006-08-31

申请号：US11347014

申请日：2006-02-03

申请人： Dylan Kelly ,  Mark Burgener

发明人： Dylan Kelly ,  Mark Burgener

IPC分类号： H04M11/00

CPC分类号： H03K17/6871 ,  H02M3/073 ,  H03K17/063 ,  H03K17/693

摘要： A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input/output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.

摘要翻译： 描述了适用于使用减少数量的晶体管来改善功率处理能力的绝缘体上硅（SOI）RF开关。 在一个实施例中，RF开关包括成对的开关和分流堆叠晶体管组，以选择性地耦合多个输入/输出节点与公共RF节点之间的RF信号。 开关和分流堆叠晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。 在一个实施例中，晶体管组在RF开关中被“对称地”堆叠（即，晶体管组都包括相同数量的晶体管）。 在另一个实施例中，晶体管组在RF开关中被“不对称地”堆叠（即，至少一个晶体管组包括不等于包含至少一个其它晶体管组的晶体管数量的多个晶体管）。 晶体管组的堆叠配置使得RF开关能够承受变化和增加的功率水平的RF信号。 不对称堆叠的晶体管分组RF开关有助于集成电路中的RF开关的区域有效的实现。 使用减少数量的堆叠晶体管可以承受最大的输入和输出信号功率电平。

公开(公告)号：US20070069291A1

公开(公告)日：2007-03-29

申请号：US11520912

申请日：2006-09-14

申请人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

发明人： Michael Stuber ,  Christopher Brindle ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener ,  Alexander Dribinsky ,  Tae Kim

IPC分类号： H01L27/12

CPC分类号： H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

摘要： A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

摘要翻译： 公开了一种用于使用累积电荷控制（ACC）技术来改善绝缘体上半导体（SOI）金属氧化物 - 硅场效应晶体管（MOSFET）器件的栅极氧化物可靠性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个实施例中，电路包括以累积电荷状态运行的MOSFET，以及用于控制可操作地耦合到SOI MOSFET的累积电荷的装置。 首先确定不受控制的累积电荷对SOI MOSFET的栅极氧化物的时间依赖介电击穿（TDDB）的影响。 第二次确定SOI MOSFET的栅极氧化物的受控累积电荷对TDDB的影响。 SOI MOSFET适于具有响应于第一和第二确定的选择的平均时间分辨率，并且使用用于可操作地耦合到SOI MOSFET的累积电荷控制的技术来操作电路。 在一个实施例中，累积的电荷控制技术包括使用可操作地耦合到SOI MOSFET体的累积电荷宿。

公开(公告)号：US20070018247A1

公开(公告)日：2007-01-25

申请号：US11484370

申请日：2006-07-10

申请人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

发明人： Christopher Brindle ,  Michael Stuber ,  Dylan Kelly ,  Clint Kemerling ,  George Imthurn ,  Robert Welstand ,  Mark Burgener

IPC分类号： H01L27/12

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78681 ,  H01L29/78684 ,  H03K17/687 ,  H03K2217/0018

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

摘要翻译： 公开了一种用于改善使用累积电荷吸收（ACS）的MOSFET器件的线性特性的方法和装置。 该方法和装置适于去除，减少或以其他方式控制SOI MOSFET中的累积电荷，从而产生FET性能特性的改进。 在一个示例性实施例中，具有至少一个SOI MOSFET的电路被配置为在累积电荷状态下操作。 当FET在累积电荷状态下工作时，可操作地耦合到SOI MOSFET的主体的累积电荷吸收器消除，去除或以其他方式控制累积电荷，从而降低寄生偏离态源极至漏极间电容的非线性 的SOI MOSFET。 在利用改进的SOI MOSFET器件实现的RF开关电路中，当SOI MOSFET在累积电荷状态下工作时，通过去除或以其他方式控制累积电荷来减小谐波和互调失真。

公开(公告)号：US20100214010A1

公开(公告)日：2010-08-26

申请号：US12799583

申请日：2010-04-27

申请人： Mark L. Burgener ,  Dylan Kelly ,  James S. Cable

发明人： Mark L. Burgener ,  Dylan Kelly ,  James S. Cable

IPC分类号： G05F3/02

CPC分类号： H03K3/013 ,  H02M3/07 ,  H02M3/073 ,  H03K3/0315

摘要： A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

摘要翻译： 描述了具有各种方面的电荷泵方法和装置。 通过限制正时钟和负时钟转换速率以及通过限制时钟发生器驱动器电路内的驱动电流以及通过增加某些传输电容器耦合开关的控制节点AC阻抗来降低从电荷泵到其它电路的噪声注入 。 单相时钟可用于控制与电荷泵内的所有有源开关一样多的电容耦合，并且电容耦合可以简化控制传输电容耦合开关的时钟信号的偏置和定时。 方法或装置的这些方面的任何组合可用于在宽范围的电荷泵结构中安静和/或简化电荷泵设计。

公开(公告)号：US07719343B2

公开(公告)日：2010-05-18

申请号：US10658154

申请日：2003-09-08

申请人： Mark L. Burgener ,  Dylan Kelly ,  James S. Cable

发明人： Mark L. Burgener ,  Dylan Kelly ,  James S. Cable

IPC分类号： H02M3/18 ,  G05F3/16 ,  H03B5/00

CPC分类号： H03K3/013 ,  H02M3/07 ,  H02M3/073 ,  H03K3/0315

摘要： A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

公开(公告)号：US20060194558A1

公开(公告)日：2006-08-31

申请号：US11347671

申请日：2006-02-03

申请人： Dylan Kelly

发明人： Dylan Kelly

IPC分类号： H04B1/26

CPC分类号： H04B1/48 ,  H03K17/6871 ,  H03K17/693

摘要： An RF switching circuit adapted to cancel selected harmonic signals. An unwanted harmonic signal Sh1 at a selected harmonic frequency Fsh of an operating frequency Fo exists in a signal Si conducted by the switching circuit, possibly produced by the switching circuit due to conduction through a first nonlinear impedance Znl(1). A compensating harmonic signal Sh2 is therefore generated by conduction via a nonlinear impedance Znl(2). Znl(1) may be due to parasitic conduction by “off” switching elements, while Znl(2) may be due to conduction by an “on” FET. The amplitude and/or phasing of Sh2 may be adjusted by selecting components for a network coupling Znl(2) to the conducted signal Si, such that Sh2 substantially cancels Sh1 across a target range of input power.

摘要翻译： 一种适于消除所选谐波信号的射频切换电路。 在由开关电路传导的信号Si中存在工作频率Fo的选定谐波频率Fsh处的不需要的谐波信号Sh 1，可能由于通过第一非线性阻抗Zn1（1）的导通而由开关电路产生。 因此，通过非线性阻抗Zn1（2）的传导产生补偿谐波信号Sh 2。 Zn1（1）可能是由于“断开”开关元件的寄生导通，而Zn1（2）可能是由于“导通”FET引起的。 可以通过选择用于将Zn1（2）耦合到传导信号Si的网络的组件来调整Sh 2的振幅和/或定相，使得Sh 2在输入功率的目标范围上基本上抵消Sh 1。

公开(公告)号：US20080076371A1

公开(公告)日：2008-03-27

申请号：US11881816

申请日：2007-07-26

申请人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

发明人： Alexander Dribinsky ,  Tae Kim ,  Dylan Kelly ,  Christopher Brindle

IPC分类号： H04B1/16

CPC分类号： H03K17/161 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08 ,  H03K17/102 ,  H03K17/284 ,  H03K17/6874 ,  H03K17/689 ,  H03K2217/0009

摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

摘要翻译： 公开了一种用于控制电路中的电荷注入的电路和方法。 在一个实施例中，电路和方法用于绝缘体上半导体（SOI）射频（RF）开关中。 在一个实施例中，SOI RF开关包括串联耦合的多个开关晶体管，被称为“堆叠”晶体管，并且在SOI衬底上被实现为单片集成电路。 电荷注入控制元件被耦合以从位于开关晶体管之间的电阻隔离节点接收注入的电荷，并且将注入的电荷传送到不被电阻隔离的至少一个节点。 在一个实施例中，电荷注入控制元件包括电阻器。 在另一个实施例中，电荷注入控制元件包括晶体管。 公开了一种用于控制开关电路中的电荷注入的方法，其中注入的电荷在串联耦合的开关晶体管之间的电阻隔离节点处产生，并且注入的电荷被传送到不被电阻隔离的开关电路的至少一个节点。

公开(公告)号：US20060189277A1

公开(公告)日：2006-08-24

申请号：US11064110

申请日：2005-02-23

申请人： Tero Ranta ,  Juha Ella ,  Rodd Novak ,  Dylan Kelly

发明人： Tero Ranta ,  Juha Ella ,  Rodd Novak ,  Dylan Kelly

IPC分类号： H04B1/44

CPC分类号： H04B1/006

摘要： The present invention relates to a transceiver device having a switching arrangement and to a method of improving such a switching arrangement, wherein an input impedance of a duplexer means, as seen by a switching means (10) at a predetermined frequency, is transformed to a predetermined maximum or a minimum value. The switching means is used to selectively connect an antenna port to a transmitting and receiving path which leads to the duplexer means (14). The transformation of the input impedance can be achieved by providing a phase shifter (20) between a switching means (10) and the duplexer means (14). Thereby, the phase of the impedance can be optimized for minimal intermodulation distortion and to relax switch linearity requirements, so that the switching means (10) can be used for switching duplex signals.

摘要翻译： 本发明涉及一种具有切换装置和改进这种切换装置的方法的收发器装置，其中由切换装置（10）以预定频率看到的双工器装置的输入阻抗被转换为 预定最大值或最小值。 切换装置用于选择性地将天线端口连接到通向双工器装置（14）的发送和接收路径。 可以通过在开关装置（10）和双工器装置（14）之间提供移相器（20）来实现输入阻抗的变换。 因此，可以优化阻抗的相位以最小化互调失真并且松弛开关线性度要求，使得开关装置（10）可用于开关双工信号。

公开(公告)号：US20060199563A1

公开(公告)日：2006-09-07

申请号：US11351342

申请日：2006-02-09

申请人： Dylan Kelly ,  Clint Kemerling

发明人： Dylan Kelly ,  Clint Kemerling

IPC分类号： H04B1/44 ,  H04B1/28

CPC分类号： H04B1/48

摘要： A novel RF switch for switching radio frequency (RF) signals is disclosed. The RF switch may comprise both enhancement and depletion mode field-effect transistors (E-FETs and D-FETs) implemented as a monolithic integrated circuit (IC) on a silicon-on-insulator (SOI) substrate. The disclosed RF switch, with a novel bleeder circuit, may be used in RF applications wherein a selected switch state and performance are required when the switch and bleeder circuits are not provided with operating power (i.e., when the switch and bleeder circuits are “unpowered”).