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公开(公告)号:US07938982B2
公开(公告)日:2011-05-10
申请号:US11968381
申请日:2008-01-02
申请人: Mark G. Stinson , Henry F. Erk , Guoqiang Zhang
发明人: Mark G. Stinson , Henry F. Erk , Guoqiang Zhang
IPC分类号: C09K13/08
CPC分类号: H01L21/30608 , C09K13/02 , C11D7/265 , C11D7/3245 , C11D11/0047 , H01L21/02019
摘要: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
摘要翻译: 使用包含水,氢氧根离子源和螯合剂的水溶液形式的苛性蚀刻剂来蚀刻硅晶片的方法。 该方法产生基本上不含扩散金属离子的硅晶片。
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公开(公告)号:US07323421B2
公开(公告)日:2008-01-29
申请号:US11152362
申请日:2005-06-14
申请人: Mark G. Stinson , Henry F. Erk , Guoqiang (David) Zhang , Mick Bjelopavlic , Alexis Grabbe , Jozef G. Vermeire , Judith A. Schmidt , Thomas E. Doane , James R. Capstick
发明人: Mark G. Stinson , Henry F. Erk , Guoqiang (David) Zhang , Mick Bjelopavlic , Alexis Grabbe , Jozef G. Vermeire , Judith A. Schmidt , Thomas E. Doane , James R. Capstick
IPC分类号: H01L21/461
CPC分类号: H01L21/30608 , C09K13/02 , C11D7/265 , C11D7/3245 , C11D11/0047 , H01L21/02019
摘要: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
摘要翻译: 使用包含水,氢氧根离子源和螯合剂的水溶液形式的苛性蚀刻剂来蚀刻硅晶片的方法。 该方法产生基本上不含扩散金属离子的硅晶片。
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公开(公告)号:US07846007B2
公开(公告)日:2010-12-07
申请号:US12351290
申请日:2009-01-09
申请人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
发明人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
CPC分类号: B24B53/017
摘要: A system for polishing a semiconductor wafer. The system includes a polishing apparatus having a rotatable polishing pad for polishing the wafer. A dressing apparatus is mounted adjacent the polishing pad for dressing the polishing pad. The dressing apparatus includes a dressing member engageable with the polishing pad. A cleaning apparatus is mounted adjacent the polishing pad for removing particulate and chemicals from the polishing pad. The system includes a controller for controlling the dressing apparatus and the cleaning apparatus.
摘要翻译: 一种用于抛光半导体晶片的系统。 该系统包括具有用于抛光晶片的可旋转抛光垫的抛光装置。 修整装置安装在抛光垫附近,用于修整抛光垫。 修整装置包括可与抛光垫接合的修整构件。 清洁装置安装在抛光垫附近,用于从抛光垫去除颗粒和化学物质。 该系统包括用于控制敷料装置和清洁装置的控制器。
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公开(公告)号:US20090176441A1
公开(公告)日:2009-07-09
申请号:US12351290
申请日:2009-01-09
申请人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
发明人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
CPC分类号: B24B53/017
摘要: A system for polishing a semiconductor wafer. The system includes a polishing apparatus having a rotatable polishing pad for polishing the wafer. A dressing apparatus is mounted adjacent the polishing pad for dressing the polishing pad. The dressing apparatus includes a dressing member engageable with the polishing pad. A cleaning apparatus is mounted adjacent the polishing pad for removing particulate and chemicals from the polishing pad. The system includes a controller for controlling the dressing apparatus and the cleaning apparatus.
摘要翻译: 一种用于抛光半导体晶片的系统。 该系统包括具有用于抛光晶片的可旋转抛光垫的抛光装置。 修整装置安装在抛光垫附近,用于修整抛光垫。 修整装置包括可与抛光垫接合的修整构件。 清洁装置安装在抛光垫附近,用于从抛光垫去除颗粒和化学物质。 该系统包括用于控制敷料装置和清洁装置的控制器。
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公开(公告)号:US5417767A
公开(公告)日:1995-05-23
申请号:US174046
申请日:1993-12-28
申请人: Mark G. Stinson
发明人: Mark G. Stinson
IPC分类号: B65G1/00 , B65G49/07 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/673 , H01L21/02 , B05C13/02
CPC分类号: H01L21/67313 , C23C16/4587 , H01L21/67326
摘要: A wafer carrier which supports at least one wafer, during a process in which material is deposited on the wafer from chemical vapor in a reactor, includes a base having an inner curved surface extending from a first lateral edge of the base to a second lateral edge of the base. Slots in the inner surface of the base extending generally continuously from the first lateral edge to the second lateral edge are defined by a bottom wall and opposing side walls. The slots may each receive at least a portion of a thin, outwardly facing edge of the wafer for holding the wafer in an upright position. The bottom wall of the slot closely conforms to the predetermined shape of the portion of the outwardly facing peripheral edge of the wafer to inhibit the entry of vapor between the base and the outwardly facing edge of the wafer and the formation of material bridges between the wafer and the carrier by deposition of the material from the chemical vapor.
摘要翻译: 在材料从反应器中的化学蒸气沉积在晶片上的过程中,支撑至少一个晶片的晶片载体包括具有从基座的第一侧边缘延伸到第二侧边缘的内曲面的基座 的基地。 由底壁和相对的侧壁限定从第一侧边缘到第二侧边缘大致连续延伸的底座的内表面中的槽。 槽可以各自接收晶片的薄的向外的边缘的至少一部分,用于将晶片保持在直立位置。 槽的底壁与晶片向外的周边部分的一部分的预定形状紧密地一致,以防止在晶片的基部和向外的边缘之间进入蒸汽,并且在晶片之间形成材料桥 和通过从化学蒸气沉积材料的载体。
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公开(公告)号:US07846006B2
公开(公告)日:2010-12-07
申请号:US11771495
申请日:2007-06-29
申请人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
发明人: Mark G. Stinson , Madhavan S. Esayanur , Dennis Buese , Emanuele Corsi , Ezio Bovio , Antonio Maria Rinaldi , Larry Flannery
CPC分类号: B24B53/017
摘要: A dressing apparatus for dressing a polishing pad includes a dressing member engageable with the polishing pad. The dressing apparatus is adapted to change the amount of force exerted by the dressing member on the polishing pad as the dressing member moves radially along the polishing pad. A controller for controlling the dressing apparatus has pre-programmed recipes that are selectable based on the radial profile of a measured polished wafer.
摘要翻译: 用于修整抛光垫的修整装置包括可与抛光垫接合的修整构件。 修整装置适于在修整构件沿着抛光垫径向移动时改变由修整构件施加在抛光垫上的力的量。 用于控制敷料装置的控制器具有基于被测量的抛光晶片的径向轮廓可选择的预编程配方。
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