摘要:
Disclosed is a method and system for inserting redundant paths into an integrated circuit. Particularly, the invention provides a method for identifying a single via in a first path connecting two elements, determining if an alternate route is available for connecting the two elements (other than a redundant via), and for inserting a second path into the available alternate route. The combination of the first and second paths provides greater redundancy than inserting a redundant via alone. More importantly, such redundant paths provide for redundancy when congestion prevents a redundant via from being inserted adjacent to the single via. An embodiment of the method further comprises removing the single via and any redundant wire segments, if all of the additional vias used to form the second path can be made redundant.
摘要:
Embodiments herein provide a method and computer program product for optimizing router settings to increase IC yield. A method begins by reviewing yield data in an IC manufacturing line to identify structure-specific mechanisms that impact IC yield. Next, the method establishes a structural identifier for each structure-specific mechanism, wherein the structural identifiers include wire codes, tags, and/or unique identifiers. Different structural identifiers are established for wires having different widths. Furthermore, the method establishes a weighting factor for each structure-specific mechanism, wherein higher weighting factors are established for structure-specific mechanisms comprising thick wires proximate to multiple thick wires. The method establishes the structural identifiers and the weighting factors for incidence of spacing between single wide lines, double wide lines, and triple wide lines and for incidence of wires above large metal lands. Subsequently, the router settings are modified based on the structural identifiers and the weighting factors to minimize systematic defects.
摘要:
A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要:
A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要:
An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要:
An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要:
A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.
摘要:
Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.
摘要:
A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.
摘要:
A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.