Use of redundant routes to increase the yield and reliability of a VLSI layout
    1.
    发明授权
    Use of redundant routes to increase the yield and reliability of a VLSI layout 有权
    使用冗余路由来提高VLSI布局的收益和可靠性

    公开(公告)号:US07308669B2

    公开(公告)日:2007-12-11

    申请号:US10908593

    申请日:2005-05-18

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077 G06F17/5068

    摘要: Disclosed is a method and system for inserting redundant paths into an integrated circuit. Particularly, the invention provides a method for identifying a single via in a first path connecting two elements, determining if an alternate route is available for connecting the two elements (other than a redundant via), and for inserting a second path into the available alternate route. The combination of the first and second paths provides greater redundancy than inserting a redundant via alone. More importantly, such redundant paths provide for redundancy when congestion prevents a redundant via from being inserted adjacent to the single via. An embodiment of the method further comprises removing the single via and any redundant wire segments, if all of the additional vias used to form the second path can be made redundant.

    摘要翻译: 公开了一种将冗余路径插入到集成电路中的方法和系统。 特别地,本发明提供了一种用于在连接两个元件的第一路径中识别单个通孔的方法,确定替代路线是否可用于连接两个元件(不同于冗余通路),以及用于将第二路径插入到可用替代 路线。 第一和第二路径的组合提供了比单独插入冗余通道更大的冗余。 更重要的是,当拥塞阻止冗余通道被插入邻近单个通道时,这种冗余路径提供了冗余。 如果用于形成第二路径的所有附加通孔都可以是冗余的,则该方法的实施例还包括去除单个通孔和任何冗余线段。

    Yield optimization in router for systematic defects
    2.
    发明授权
    Yield optimization in router for systematic defects 失效
    路由器产生优化系统缺陷

    公开(公告)号:US07398485B2

    公开(公告)日:2008-07-08

    申请号:US11279262

    申请日:2006-04-11

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5077

    摘要: Embodiments herein provide a method and computer program product for optimizing router settings to increase IC yield. A method begins by reviewing yield data in an IC manufacturing line to identify structure-specific mechanisms that impact IC yield. Next, the method establishes a structural identifier for each structure-specific mechanism, wherein the structural identifiers include wire codes, tags, and/or unique identifiers. Different structural identifiers are established for wires having different widths. Furthermore, the method establishes a weighting factor for each structure-specific mechanism, wherein higher weighting factors are established for structure-specific mechanisms comprising thick wires proximate to multiple thick wires. The method establishes the structural identifiers and the weighting factors for incidence of spacing between single wide lines, double wide lines, and triple wide lines and for incidence of wires above large metal lands. Subsequently, the router settings are modified based on the structural identifiers and the weighting factors to minimize systematic defects.

    摘要翻译: 本文的实施例提供了一种用于优化路由器设置以增加IC产量的方法和计算机程序产品。 一种方法开始于检查IC生产线中的产量数据,以确定影响IC产量的结构特异性机制。 接下来,该方法为每个结构特定机制建立结构标识符,其中结构标识符包括有线代码,标签和/或唯一标识符。 针对具有不同宽度的电线建立了不同的结构标识符。 此外,该方法为每个结构特定机构建立加权因子,其中针对包括靠近多个粗线的粗线的结构特定机构建立较高的加权因子。 该方法建立了单宽线,双宽线和三宽线之间的间距发生的结构标识符和加权因子,以及大金属土地上电线的入射。 随后,路由器设置基于结构标识符和权重因子进行修改,以最大限度地减少系统缺陷。

    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same
    3.
    发明申请
    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same 有权
    用于集成电路物理设计过程的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US20100211923A9

    公开(公告)日:2010-08-19

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool
    4.
    发明授权
    Method for computing the sensitivity of a VLSI design to both random and systematic defects using a critical area analysis tool 失效
    使用关键区域分析工具计算VLSI设计对随机和系统缺陷的敏感度的方法

    公开(公告)号:US07487476B2

    公开(公告)日:2009-02-03

    申请号:US11279300

    申请日:2006-04-11

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.

    摘要翻译: 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来,该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地,对于短路导致的缺陷,当结构包括较高的系统缺陷灵敏度水平时,该方法预扩展结构,并且当结构包括较低的系统缺陷灵敏度水平时预结构。 接下来,使用改进的结构对集成电路布局进行关键区域分析,其中使用点投掷,几何展开或Voronoi图。 然后,该方法计算故障密度值,计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较,其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。

    Redundant Micro-Loop Structure For Use In An Integrated Circuit Physical Design Process And Method Of Forming The Same
    5.
    发明申请
    Redundant Micro-Loop Structure For Use In An Integrated Circuit Physical Design Process And Method Of Forming The Same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US20080097738A1

    公开(公告)日:2008-04-24

    申请号:US11552225

    申请日:2006-10-24

    IPC分类号: G06F17/50

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和与第二线的第一距离的第四线 第二层线路。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    6.
    发明授权
    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US08234594B2

    公开(公告)日:2012-07-31

    申请号:US11552225

    申请日:2006-10-24

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和位于距离第二线的第一距离的第四线 在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔大致轴向对准第一通孔。 第三通过在第四线的第二位置连接第三和第四导线。 在第二位置连接第一和第四导线的第四通孔,第四通孔与第三通孔大致轴向对齐。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    7.
    发明授权
    Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    用于集成电路物理设计过程中使用的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US07984394B2

    公开(公告)日:2011-07-19

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Test yield estimate for semiconductor products created from a library
    8.
    发明授权
    Test yield estimate for semiconductor products created from a library 有权
    从图书馆创建的半导体产品的测试产量估算

    公开(公告)号:US07386815B2

    公开(公告)日:2008-06-10

    申请号:US11163696

    申请日:2005-10-27

    IPC分类号: G06F17/50

    摘要: Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.

    摘要翻译: 公开了一种在设计布局之前预测半导体产品的测试产量的方法。 这是通过对用于形成特定产品的单个库元素应用关键区域分析,并通过估计组合这些库元素的测试产出影响来实现的。 例如,该方法考虑了库元素对库元素短路的灵敏度的测试产量影响以及对接线故障的灵敏度的测试产量影响。 所公开的方法进一步允许模具尺寸增长与使用具有较高测试成品率的库元件进行交易,以便提供最佳设计解决方案。 因此,该方法可用于修改库元素选择以优化测试产量。 最后,该方法在关键设计检查点进一步重复,以重新验证产品被引用给客户时的初始测试收益(和成本)假设。 因此,该方法通过设计从初始尺寸提高了测试产量估算的准确度,并进一步允许修改设计以提高测试产量。

    METHOD FOR COMPUTING THE SENSITIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL
    9.
    发明申请
    METHOD FOR COMPUTING THE SENSITIVITY OF A VLSI DESIGN TO BOTH RANDOM AND SYSTEMATIC DEFECTS USING A CRITICAL AREA ANALYSIS TOOL 失效
    使用关键区域分析工具计算VLSI设计对两个随机和系统缺陷的灵敏度的方法

    公开(公告)号:US20120137262A1

    公开(公告)日:2012-05-31

    申请号:US13368413

    申请日:2012-02-08

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A method of estimating integrated circuit yield comprises providing an integrated circuit layout and a set of systematic defects based on a manufacturing process. Next, the method represents a systematic defect by modifying structures in the integrated circuit layout to create modified structures. More specifically, for short-circuit-causing defects, the method pre-expands the structures when the structures comprise a higher systematic defect sensitivity level, and pre-shrinks the structures when the structures comprise a lower systematic defect sensitivity level. Following this, a critical area analysis is performed on the integrated circuit layout using the modified structures, wherein dot-throwing, geometric expansion, or Voronoi diagrams are used. The method then computes a fault density value, random defects and systematic defects are computed. The fault density value is subsequently compared to a predetermined value, wherein the predetermined value is determined using test structures and/or yield data from a target manufacturing process.

    摘要翻译: 估计集成电路产量的方法包括基于制造过程提供集成电路布局和一组系统缺陷。 接下来,该方法通过修改集成电路布局中的结构以产生修改的结构来表示系统缺陷。 更具体地,对于短路导致的缺陷,当结构包括较高的系统缺陷灵敏度水平时,该方法预扩展结构,并且当结构包括较低的系统缺陷灵敏度水平时,预结构。 接下来,使用改进的结构对集成电路布局进行关键区域分析,其中使用点投掷,几何展开或Voronoi图。 然后,该方法计算故障密度值,计算随机缺陷和系统缺陷。 随后将故障密度值与预定值进行比较,其中使用来自目标制造过程的测试结构和/或屈服数据确定预定值。

    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same
    10.
    发明申请
    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same 有权
    用于集成电路物理设计过程的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US20090158231A1

    公开(公告)日:2009-06-18

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。