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公开(公告)号：US20090074021A1
公开(公告)日：2009-03-19
申请号：US12211939
申请日：2008-09-17
CPC分类号： H01S5/042 , H01S5/0428 , H01S5/06216 , H01S5/0622 , H01S5/06837 , H01S5/0687
摘要： Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.
摘要翻译： 用于脉冲激光二极管的操作的电路装置和用于操作脉冲激光二极管的方法包括向脉冲激光二极管提供直流电流的电流源。 该电路装置可以提供脉冲激光二极管的操作，该激光二极管可以是稳定的并且不会有无意的波长偏移。
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公开(公告)号：US08094694B2
公开(公告)日：2012-01-10
申请号：US12211939
申请日：2008-09-17
IPC分类号： H01S3/04
CPC分类号： H01S5/042 , H01S5/0428 , H01S5/06216 , H01S5/0622 , H01S5/06837 , H01S5/0687
摘要： Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.
摘要翻译： 用于脉冲激光二极管的操作的电路装置和用于操作脉冲激光二极管的方法包括向脉冲激光二极管提供直流电流的电流源。 该电路装置可以提供脉冲激光二极管的操作，该激光二极管可以是稳定的并且不会有无意的波长偏移。
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3.发明授权Device with a radiation-emitting semiconductor component and procedure for the temperature stabilization of a radiation-emitting semiconductor component 有权具有辐射发射半导体部件的装置和用于辐射发射半导体部件的温度稳定的程序公开(公告)号：US07542494B2
公开(公告)日：2009-06-02
申请号：US11065653
申请日：2005-02-24
CPC分类号： H01S5/02453 , H01S5/0612 , H01S5/06804
摘要： A device having at least one radiation-emitting semiconductor component (1), the semiconductor component being assigned at least one electrical heating element (2) designed for heating the semiconductor component. Furthermore, a method for the temperature stabilization of the operating temperature of a radiation-emitting semiconductor component (1) of a device is specified, the semiconductor component being assigned an electrical heating element (2), by means of which the semiconductor component is heated when the operating temperature of the semiconductor component falls below a predetermined desired value of the operating temperature. The semiconductor component can be assigned a temperature sensor (4) for monitoring the operating temperature of the semiconductor component.
摘要翻译： 一种具有至少一个辐射发射半导体部件（1）的器件，所述半导体部件被分配至少一个设计用于加热所述半导体部件的电加热元件（2）。 此外，规定了用于装置的发射辐射半导体部件（1）的工作温度的温度稳定的方法，该半导体部件被分配有电加热元件（2），半导体部件被加热 当半导体组件的工作温度低于工作温度的预定期望值时。 可以为半导体部件分配用于监测半导体部件的工作温度的温度传感器（4）。
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4.发明申请Device with a radiation-emitting semiconductor component and procedure for the temperature stabilization of a radiation-emitting semiconductor component 有权具有辐射发射半导体部件的装置和用于辐射发射半导体部件的温度稳定的程序公开(公告)号：US20050199890A1
公开(公告)日：2005-09-15
申请号：US11065653
申请日：2005-02-24
CPC分类号： H01S5/02453 , H01S5/0612 , H01S5/06804
摘要： A device having at least one radiation-emitting semiconductor component (1), the semiconductor component being assigned at least one electrical heating element (2) designed for heating the semiconductor component. Furthermore, a method for the temperature stabilization of the operating temperature of a radiation-emitting semiconductor component (1) of a device is specified, the semiconductor component being assigned an electrical heating element (2), by means of which the semiconductor component is heated when the operating temperature of the semiconductor component falls below a predetermined desired value of the operating temperature. The semiconductor component can be assigned a temperature sensor (4) for monitoring the operating temperature of the semiconductor component.
摘要翻译： 一种具有至少一个辐射发射半导体部件（1）的器件，所述半导体部件被分配至少一个设计用于加热所述半导体部件的电加热元件（2）。 此外，规定了用于装置的发射辐射半导体部件（1）的工作温度的温度稳定的方法，该半导体部件被分配有电加热元件（2），半导体部件被加热 当半导体组件的工作温度低于工作温度的预定期望值时。 可以为半导体部件分配用于监测半导体部件的工作温度的温度传感器（4）。
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公开(公告)号：US08577218B2
公开(公告)日：2013-11-05
申请号：US13496920
申请日：2010-09-14
IPC分类号： G03B15/03
CPC分类号： G03B15/05 , F21V23/04 , G03B2215/0571 , G03B2215/0592 , H01L25/0753 , H01L33/382 , H01L2924/0002 , H04N5/2256 , H01L2924/00
摘要： An illumination device contains a light-emitting semiconductor chip containing a plurality of individually drivable emission regions. The illumination device furthermore contains an optical element designed to shape light emitted by the emission regions to form a beam of rays. The illumination device is designed such that different beam profiles of the beam of rays can be set by the individually drivable emission regions.
摘要翻译： 照明装置包含含有多个可单独驱动的发射区域的发光半导体芯片。 照明装置还包括设计成用于成形由发射区域发射的光以形成光束的光学元件。 照明装置被设计成使得可以通过单独驱动的发射区域来设置射线束的不同光束轮廓。
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公开(公告)号：US20120189291A1
公开(公告)日：2012-07-26
申请号：US13496920
申请日：2010-09-14
CPC分类号： G03B15/05 , F21V23/04 , G03B2215/0571 , G03B2215/0592 , H01L25/0753 , H01L33/382 , H01L2924/0002 , H04N5/2256 , H01L2924/00
摘要： An illumination device contains a light-emitting semiconductor chip containing a plurality of individually drivable emission regions. The illumination device furthermore contains an optical element designed to shape light emitted by the emission regions to form a beam of rays. The illumination device is designed such that different beam profiles of the beam of rays can be set by the individually drivable emission regions.
摘要翻译： 照明装置包含含有多个可单独驱动的发射区域的发光半导体芯片。 照明装置还包括设计成用于成形由发射区域发射的光以形成光束的光学元件。 照明装置被设计成使得可以通过单独驱动的发射区域来设置射线束的不同光束轮廓。
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7.发明申请Heat sink for a pulsed laser diode bar with optimized thermal time constant 审中-公开具有优化热时间常数的脉冲激光二极管条散热器公开(公告)号：US20070160097A1
公开(公告)日：2007-07-12
申请号：US10580972
申请日：2004-11-24
CPC分类号： H01S5/02423 , H01L33/648 , H01S5/02272 , H01S5/06216 , H01S5/4025
摘要： A radiation-emitting optoelectronic component (1) which is connected to a heat sink (3) and is intended for pulsed operation with the pulse duration D, and in which temperature changes of the optoelectronic component (1) take place with a thermal time constant τ during pulsed operation. The thermal time constant τ is matched to the pulse duration D in order to reduce the amplitude of the temperature changes.
摘要翻译： 辐射发射光电子部件（1），其连接到散热器（3）并且用于脉冲持续时间D的脉冲操作，并且其中光电子部件（1）的温度变化发生在热时间常数 τ在脉冲操作期间。 热时间常数τ与脉冲持续时间D相匹配，以减小温度变化的幅度。
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