Avalanche photodiode for light detection
    1.
    发明授权
    Avalanche photodiode for light detection 失效
    用于光检测的雪崩光电二极管

    公开(公告)号:US5763903A

    公开(公告)日:1998-06-09

    申请号:US516234

    申请日:1995-08-17

    摘要: An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate. The substrates may be joined to the glass substrate using a eutectic bonding process.

    摘要翻译: 用于检测X射线和其它辐射的雪崩光电二极管包括:第一衬底,其具有从其中去除的部分;第一绝缘膜,形成在第一衬底上;第二衬底,包括布置在第一绝缘膜上的浮动区硅半导体衬底, 在与第二基板对应的表面上选择性地形成在第二基板上的区域,形成在第二基板上的PN结,安装到第二基板的玻璃基板,形成在第一基板上的用于向杂质区域施加电压的第一电极 形成在第二基板上的用于向第二基板施加电压的第二电极,形成在玻璃基板上并电连接到第二电极的第三电极,以及具有连接到第三电极的引脚的集成电路封装。 因此,可以在浮动区域SOI衬底上提供浅耗尽层。 可以使用共晶接合工艺将基板连接到玻璃基板。

    Photoelectric conversion semiconductor device
    2.
    发明授权
    Photoelectric conversion semiconductor device 失效
    光电转换半导体器件

    公开(公告)号:US5744850A

    公开(公告)日:1998-04-28

    申请号:US733967

    申请日:1996-10-18

    CPC分类号: H01L27/1443 H01L31/107

    摘要: A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.

    摘要翻译: 提供了具有可容易地制造的放大功能的新颖的光电转换半导体器件。 在其一个表面上形成杂质浓度高于N型半导体衬底的杂质浓度的N +型杂质区域,在相对的表面上形成P +型杂质区域。 形成了延伸到N型半导体衬底的超过N +型杂质域的SiO 2膜,Si 3 N 4膜和SiO 2膜。 在N +型杂质区域上形成阳极电极,在P +型杂质区域上形成阴极电极。 在SiO 2膜即顶层上形成多晶硅栅电极,在其上形成Al栅电极。 在阳极电极和阴极电极之间施加反向电压,并且在阳极电极和Al栅电极之间施加预定电压。

    Method of manufacturing a semiconductor detector for detecting light and
radiation
    3.
    发明授权
    Method of manufacturing a semiconductor detector for detecting light and radiation 失效
    制造用于检测光和辐射的半导体检测器的方法

    公开(公告)号:US6001667A

    公开(公告)日:1999-12-14

    申请号:US553565

    申请日:1996-06-03

    CPC分类号: H01L27/1443 H01L27/14658

    摘要: A method of manufacturing a semiconductor detector for detecting light and radiation comprises the steps of providing a first semiconductor substrate of a first conductivity type, attaching a second substrate to the first semiconductor substrate through an insulating film, grinding the first semiconductor substrate from a surface thereof to a predetermined thickness, forming a MOS transistor on the ground surface of the first semiconductor substrate, removing the second substrate, and forming electrodes on the first semiconductor substrate for forming a depletion layer.

    摘要翻译: PCT No.PCT / JP95 / 00559 Sec。 371日期:1996年6月3日 102(e)1996年6月3日PCT 1995年3月27日PCT PCT。 公开号WO95 / 26573 日期1995年10月5日制造用于检测光和辐射的半导体检测器的方法包括以下步骤:提供第一导电类型的第一半导体衬底,通过绝缘膜将第二衬底附接到第一半导体衬底,研磨第一半导体 从其表面到预定厚度,在第一半导体衬底的接地表面上形成MOS晶体管,去除第二衬底,以及在第一半导体衬底上形成用于形成耗尽层的电极。

    Folding type portable wireless unit
    4.
    发明授权
    Folding type portable wireless unit 失效
    折叠型便携式无线单元

    公开(公告)号:US07787915B2

    公开(公告)日:2010-08-31

    申请号:US11571747

    申请日:2005-07-12

    IPC分类号: H04M1/00

    摘要: In a folding mobile radio device, a gain is lowered considerably in its close state under such a condition that an upper case is excited directly in its open state to aim at a wide band and a high gain is used as an antenna. A folding mobile radio device includes a first case, a second case, a jointing portion for connecting the first case and the second case to open/close, a conductor element arranged in the first case, and a feeding element arranged in the second case. Then, in an open state via the jointing portion, the conductor element and the feeding element come close to each other and are coupled magnetically at a time of feeding a power whereas, in a close state via the jointing portion, the conductor element and the feeding element are apart from each other rather than the open state and are not coupled magnetically at a time of feeding a power.

    摘要翻译: 在折叠式移动无线电设备中,在大气体在其打开状态下被直接激发以对准宽带并且高增益被用作天线的条件下,在其接近状态下,增益显着降低。 折叠移动无线电设备包括第一壳体,第二壳体,用于连接第一壳体和第二壳体以打开/关闭的接合部分,布置在第一壳体中的导体元件和布置在第二壳体中的馈送元件。 然后,通过接合部处于断开状态,导体元件和馈电元件彼此接近并且在馈电时磁耦合,而在接合状态下,通过接合部分导体元件和 馈电元件彼此分开而不是打开状态,并且在馈送电力时不会磁耦合。

    Information processing device and preview displaying method
    5.
    发明申请
    Information processing device and preview displaying method 审中-公开
    信息处理装置和预览显示方法

    公开(公告)号:US20070109581A1

    公开(公告)日:2007-05-17

    申请号:US11593590

    申请日:2006-11-07

    申请人: Yutaka Saitoh

    发明人: Yutaka Saitoh

    IPC分类号: G06F3/12

    摘要: An information processing device converts input document data into print data used to control a printer, and displays a print preview before outputting the print data to the printer. In the information processing device, a document data storing unit stores the input document data as intermediate data. A layout determining unit determines a layout of image data of the document data on an output sheet based on a specified printing method, so that layout information is created. A preview displaying unit displays a print preview on a computer screen based on the stored document data. A print data creating unit converts the input document data into the print data.

    摘要翻译: 信息处理设备将输入的文档数据转换为用于控制打印机的打印数据,并在将打印数据输出到打印机之前显示打印预览。 在信息处理设备中,文档数据存储单元将输入的文档数据存储为中间数据。 布局确定单元基于指定的打印方法在输出页上确定文档数据的图像数据的布局,从而创建布局信息。 预览显示单元基于存储的文档数据在计算机屏幕上显示打印预览。 打印数据创建单元将输入的文档数据转换成打印数据。

    Wireless measuring device
    6.
    发明申请
    Wireless measuring device 有权
    无线测量设备

    公开(公告)号:US20060052987A1

    公开(公告)日:2006-03-09

    申请号:US11206157

    申请日:2005-08-18

    IPC分类号: G06F15/00 H03F1/26 H04B15/00

    CPC分类号: H04Q9/00

    摘要: A wireless measuring device 1 is provided which includes a plurality of child units 2 and a parent unit 3 to receive data measured by these child units 2 by wireless communication. Each of the child units 2 has a controlling section 20 that can move to a standby state, a measuring section 21, a signal receiving section 22 to receive a measurement instructing signal from the parent unit 3, and a signal transmitting section 23 to transmit the measured data by wireless communication. The parent unit 3 has a signal transmitting section to transmit the measurement instructing signal to each of the child units 2 and a measured data receiving section 32 to receive measured data to be transmitted from the signal transmitting section 23.

    摘要翻译: 提供一种无线测量装置1,其包括多个子单元2和母单元3,以通过无线通信来接收由这些子单元2测量的数据。 每个子单元2具有可以移动到待机状态的控制部分20,测量部分21,用于接收来自母单元3的测量指令信号的信号接收部分22以及信号发送部分23, 通过无线通信测量数据。 母单元3具有信号发送部分,用于将测量指示信号发送到每个子单元2和测量数据接收部分32,以接收从信号发送部分23发送的测量数据。

    Semiconductor acceleration sensor
    7.
    发明授权
    Semiconductor acceleration sensor 失效
    半导体加速度传感器

    公开(公告)号:US6158283A

    公开(公告)日:2000-12-12

    申请号:US798290

    申请日:1997-02-07

    摘要: A semiconductor acceleration sensor comprises a cantilever structure formed from a semiconductor wafer and having a first surface for receiving an acceleration force, a second surface disposed generally orthogonal to the first surface, and strain sensing portions disposed on the second surface. A supporting body supports the cantilever structure. A plurality of bridge circuits are disposed on the second surface of the rectangular parallelepiped shaped structure. Each of the bridge circuits has a plurality of the strain sensing portions.

    摘要翻译: 半导体加速度传感器包括由半导体晶片形成并具有用于接收加速力的第一表面的悬臂结构,大致垂直于第一表面设置的第二表面和设置在第二表面上的应变感测部。 支撑体支撑悬臂结构。 多个桥接电路设置在长方体形状结构的第二表面上。 每个桥接电路具有多个应变感测部分。

    Radicicol derivatives
    9.
    发明授权
    Radicicol derivatives 失效
    蓝霉素衍生物

    公开(公告)号:US5977165A

    公开(公告)日:1999-11-02

    申请号:US958285

    申请日:1997-10-27

    IPC分类号: C07D313/00 A61K31/335

    CPC分类号: C07D313/00

    摘要: The present invention relates to radicicol derivatives represented by the following formula (I) or pharmacologically acceptable salts thereof: ##STR1## wherein R.sup.1 and R.sup.2 are the same or different and each represents hydrogen, alkanoyl, alkenoyl or tert-butyldimethylsilyl; (1) when X represents halogen, Y represents an oxygen atom or R.sup.4 --O--N (wherein R.sup.4 represents hydrogen or substituted or unsubstituted lower alkyl); and R.sup.3 represents hydrogen, alkanoyl, alkenoyl or the like; and (2) when X and R.sup.3 are combined with each other to represent a single bond; Y represents R.sup.4B --O--N (wherein R.sup.4B has the same meaning as R.sup.4). The radicicol derivatives of the present invention demonstrate tyrosine kinase inhibition activity and pharmacological activities such as antitumor, antimicrobial or immunosuppression effects.

    摘要翻译: 本发明涉及由下式(I)表示的根赤壳菌素衍生物或其药理学上可接受的盐:其中R1和R2相同或不同,各自代表氢,烷酰基,烯酰基或叔丁基二甲基甲硅烷基; (1)当X表示卤素时,Y表示氧原子或R4-O-N(其中R4表示氢或取代或未取代的低级烷基); 和R3表示氢,烷酰基,烯酰基等; 和(2)当X和R 3相互结合以表示单键时; Y表示R4B-O-N(其中R4B与R4相同)。 本发明的根皮霉素衍生物显示出酪氨酸激酶抑制活性和药理活性,如抗肿瘤,抗微生物或免疫抑制作用。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5959343A

    公开(公告)日:1999-09-28

    申请号:US839912

    申请日:1997-04-21

    IPC分类号: H01L27/06 H01L29/00

    CPC分类号: H01L27/0688

    摘要: A semiconductor device comprises a reference voltage device for outputting a constant voltage, a voltage dividing device receptive of the constant voltage for dividing the constant voltage and outputting different currents, a digital signal processing device receptive of the different currents outputted by the voltage dividing device and outputting voltages, and a voltage amplifying device receptive of at least a ground voltage and one of the voltages outputted by the digital signal processing device and outputting a signal produced by amplifying the voltage of the digital signal processing device. The voltage dividing device comprises a ladder resistor circuit having a substrate, an insulating film disposed on the substrate, a first polycrystal silicon film disposed on the insulating film, an interlayer insulating film disposed on the first polycrystal silicon film, and a second polycrystal silicon film disposed on the interlayer insulating film and electrically connected to the first polycrystal silicon film.

    摘要翻译: 半导体器件包括用于输出恒定电压的参考电压器件,接受用于分压恒定电压并输出不同电流的恒定电压的分压器件,接收由分压器件输出的不同电流的数字信号处理器件,以及 输出电压,以及电压放大装置,其接受由数字信号处理装置输出的至少一个接地电压和一个电压,并输出通过放大数字信号处理装置的电压而产生的信号。 分压装置包括具有基板的梯形电阻电路,设置在基板上的绝缘膜,设置在绝缘膜上的第一多晶硅膜,设置在第一多晶硅膜上的层间绝缘膜和第二多晶硅膜 设置在层间绝缘膜上并与第一多晶硅膜电连接。