Plasma processing apparatus capable of evaluating process performance
    3.
    发明授权
    Plasma processing apparatus capable of evaluating process performance 失效
    能够评估工艺性能的等离子体处理装置

    公开(公告)号:US06929712B2

    公开(公告)日:2005-08-16

    申请号:US10235783

    申请日:2002-09-06

    CPC分类号: H01J37/32082 H01J37/32935

    摘要: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

    摘要翻译: 等离子体处理装置的高频电流检测器检测从高频电源向腔室供给不在室内产生等离子体的范围内的高频电力时产生的高频电流。 高频电流检测器将检测到的高频电流输出到计算机。 计算机将从高频电流检测器接收的高频电流与参考高频电流进行比较。 当接收的高频电流与参考高频电流相匹配时,计算机确定处理性能正常。 否则,计算机会确定进程性能异常。 以这种方式,检测到对装置特有的高频特性,并且基于检测到的高频特性来评估处理性能。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06651678B2

    公开(公告)日:2003-11-25

    申请号:US10124729

    申请日:2002-04-18

    IPC分类号: H01L21302

    CPC分类号: H01L21/32137 H01L21/28123

    摘要: A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.

    摘要翻译: 蚀刻半导体装置防止栅电极边缘变窄的方法包括在半导体衬底表面上由电介质膜支撑的电极或布线材料的主蚀刻以暴露电介质膜。 在主蚀刻步骤之后,通过使用包含含卤素气体的第一气体混合物和通过含卤素气体抑制介电膜蚀刻的附加气体,并且在第二气体中依次蚀刻电极或布线材料的残留物 包含含卤素气体和添加气体的混合气体,其添加气体量比第一气体混合物浓度大。

    Plasma generating apparatus
    5.
    发明授权
    Plasma generating apparatus 失效
    等离子体发生装置

    公开(公告)号:US06335595B1

    公开(公告)日:2002-01-01

    申请号:US09641340

    申请日:2000-08-18

    IPC分类号: H01J724

    摘要: A plasma generating apparatus includes a vacuum container, an anode and a cathode including multiple electrodes, a power supply for applying a high voltage to the anode and the cathode, and switching elements for switching the electrodes in the anode and the cathode to which the high voltage is applied. The combination of the electrodes are switched by switching elements to form a sheet plasma at any desired angle relative to directional electromagnetic waves.

    摘要翻译: 一种等离子体发生装置包括:真空容器,包括多个电极的阳极和阴极;用于向阳极和阴极施加高电压的电源;以及用于切换阳极和阴极中的电极的开关元件, 施加电压。 通过开关元件来切换电极的组合以相对于定向电磁波形成任何所需角度的片状等离子体。