METHOD OF MANUFACTURING AN ALUMINUM NITRIDE POWDER
    6.
    发明申请
    METHOD OF MANUFACTURING AN ALUMINUM NITRIDE POWDER 有权
    制造氮化铝粉末的方法

    公开(公告)号:US20090220404A1

    公开(公告)日:2009-09-03

    申请号:US12463480

    申请日:2009-05-11

    IPC分类号: C01B21/072

    摘要: An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.

    摘要翻译: 提供了一种氮化铝系陶瓷烧结体,其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量%以上至1.0重量%以下的量烧结而形成, 量不大于0.7重量%,其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内,晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。

    ALUMINUM NITRIDE SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER
    8.
    发明申请
    ALUMINUM NITRIDE SINTERED BODY AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER 有权
    氮化铝烧结体和半导体制造装置

    公开(公告)号:US20080242531A1

    公开(公告)日:2008-10-02

    申请号:US12054715

    申请日:2008-03-25

    IPC分类号: C04B35/00

    摘要: The aluminum nitride sintered body includes at least europium (Eu), aluminum (Al), and oxygen (O). It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could be three-dimensionally continued in the aluminum nitride sintered body to realize a lower resistance without damaging various properties unique to aluminum nitride.

    摘要翻译: 所述氮化铝烧结体至少包含铕(Eu),铝(Al)和氧(O)。 发现具有与Sr 3 Al 2 O 6 6的X射线衍射分布基本相同的峰的晶界相, SUB>相可以在氮化铝烧结体中三维连续,以实现较低的电阻而不损害氮化铝独特的各种特性。

    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device
    10.
    发明授权
    Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device 有权
    氮化铝系陶瓷烧结体及半导体制造装置用部件

    公开(公告)号:US07553787B2

    公开(公告)日:2009-06-30

    申请号:US11612016

    申请日:2006-12-18

    IPC分类号: C04B35/581

    摘要: An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.

    摘要翻译: 提供了一种氮化铝系陶瓷烧结体,其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量%以上至1.0重量%以下的量烧结而形成, 量不大于0.7重量%,其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内,晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。