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    Semiconductor cleaning method
    1.
    发明授权
    Semiconductor cleaning method 失效
    半导体清洗方法

    公开(公告)号：US06329268B1

    公开(公告)日：2001-12-11

    申请号：US09199460

    申请日：1998-11-25

    申请人： Masaharu Nakamori ,  Ichiro Honma

    发明人： Masaharu Nakamori ,  Ichiro Honma

    IPC分类号： H01L2120

    CPC分类号： H01L28/84

    摘要： In a method of manufacturing a semiconductor device that has an amorphous-silicon film onto which hemispherical grains are grown, a silicon wafer is cleaned at an elevated temperature using amnmonia hydrogen peroxide water solution, cleaned at an elevated temperature using chlorine hydrogen peroxide water solution, and then immersed in dilute hydrofluoric acid solution, after which it is rinsed with pure water, after which the amorphous-silicon film surface of the wafer is dried using isopropyl alcohol.

    摘要翻译： 在制造半导体器件的方法中，半导体器件具有生长半球形晶粒的非晶硅膜，使用过氧化氢水溶液在高温下清洗硅晶片，使用氯过氧化氢水溶液在升高的温度下清洗， 然后浸入稀氢氟酸溶液中，然后用纯水冲洗，之后用异丙醇干燥晶片的非晶硅膜表面。

    Fabrication method of semiconductor device with HSG configuration
    7.
    发明授权
    Fabrication method of semiconductor device with HSG configuration 有权
    具有HSG配置的半导体器件的制造方法

    公开(公告)号：US06221730B1

    公开(公告)日：2001-04-24

    申请号：US09243300

    申请日：1999-02-02

    申请人： Ichiro Honma

    发明人： Ichiro Honma

    IPC分类号： H01L218242

    CPC分类号： H01L28/84 ,  H01L21/321

    摘要： A fabrication method of a semiconductor device is provided, which makes it possible to introduce suitably a dopant into surface grains of a semiconductor layer at a comparatively low temperature. In the first step, a first semiconductor layer is formed over a semiconductor substrate through a first dielectric. In the second step, the first semiconductor layer is heat-treated to form semiconductor grains on a surface of the first semiconductor layer, thereby roughening the surface of the first semiconductor layer. The grains are made of a same material as that of the first semiconductor layer. In the third step, the first semiconductor layer with the semiconductor grains is heat-treated at a temperature of approximately 700° C. to 780° C. for a specific time in an atmosphere containing a gaseous dopant, thereby introducing the dopant into the semiconductor grains of the first semiconductor layer from the atmosphere. Preferably, a step of forming a second dielectric layer is additionally provided between the second and third steps, where the second dielectric layer is not doped with any dopant. The dopant is introduced into the semiconductor grains of the first semiconductor layer through the second dielectric layer in the third step. Thereafter, a step of removing the second dielectric layer is provided after the third step.

    摘要翻译： 提供了一种半导体器件的制造方法，其使得可以在较低温度下适当地引入掺杂剂到半导体层的表面晶粒中。 在第一步骤中，通过第一电介质在半导体衬底上形成第一半导体层。 在第二步骤中，对第一半导体层进行热处理，以在第一半导体层的表面上形成半导体晶粒，从而使第一半导体层的表面粗糙化。 晶粒由与第一半导体层相同的材料制成。 在第三步骤中，将含有半导体晶粒的第一半导体层在含有气态掺杂剂的气氛中在约700℃至780℃的温度下进行热处理，从而将掺杂剂引入到半导体 来自大气的第一半导体层的晶粒。 优选地，在第二和第三步骤之间另外提供形成第二介电层的步骤，其中第二介电层未掺杂任何掺杂剂。 在第三步骤中，通过第二介电层将掺杂剂引入到第一半导体层的半导体晶粒中。 此后，在第三步之后提供去除第二电介质层的步骤。

    Method of manufacturing semiconductor memory device
    8.
    发明授权
    Method of manufacturing semiconductor memory device 失效
    制造半导体存储器件的方法

    公开(公告)号：US5858837A

    公开(公告)日：1999-01-12

    申请号：US966871

    申请日：1997-11-10

    申请人： Takashi Sakoh ,  Ichiro Honma

    发明人： Takashi Sakoh ,  Ichiro Honma

    IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

    CPC分类号： H01L27/10852 ,  H01L28/84

    摘要： A method of manufacturing a semiconductor memory device, comprising the steps of: forming a gate electrode with an insulating spacer, forming a first silicon oxide film by high-temperature chemical vapor deposition (CVD), forming n-type source/drain regions, forming a first insulating interlayer and forming a bit line; forming a second silicon oxide film by low-temperature CVD, forming a BPSG film, and annealing the second silicon oxide film and the BPSG film by first annealing to form a second insulating interlayer constituted by the stacked films; forming a third silicon oxide film by low-temperature CVD, and annealing the third silicon oxide film by second annealing; forming a node contact hole through the annealed third silicon oxide film, the second insulating interlayer, the first insulating interlayer, and the first silicon oxide film; forming an amorphous silicon film doped n-type at the time of the film formation, patterning the amorphous silicon film to form an amorphous silicon film pattern, and removing a native oxide film on a surface of the amorphous silicon film pattern using dilute hydrofluoric acid; and converting the amorphous silicon film pattern into an n-type hemispherical grained (HSG) polysilicon film pattern by third annealing to form a storage node electrode, forming a capacitive dielectric film, and forming a cell plate electrode.

    摘要翻译： 一种制造半导体存储器件的方法，包括以下步骤：用绝缘间隔物形成栅电极，通过高温化学气相沉积（CVD）形成第一氧化硅膜，形成n型源/漏区，形成 第一绝缘夹层并形成位线; 通过低温CVD形成第二氧化硅膜，形成BPSG膜，并通过第一次退火退火第二氧化硅膜和BPSG膜，以形成由堆叠膜构成的第二绝缘夹层; 通过低温CVD形成第三氧化硅膜，并通过第二次退火退火第三氧化硅膜; 通过退火的第三氧化硅膜，第二绝缘中间层，第一绝缘中间层和第一氧化硅膜形成节点接触孔; 在成膜时形成掺杂n型的非晶硅膜，图案化非晶硅膜以形成非晶硅膜图案，并使用稀氢氟酸除去非晶硅膜图案表面上的天然氧化膜; 并通过第三退火将非晶硅膜图案转换为n型半球晶粒（HSG）多晶硅膜图案，形成存储节点电极，形成电容电介质膜，形成单元板电极。

    Process for producing cobalt-containing magnetic iron oxide powder
    9.
    发明授权
    Process for producing cobalt-containing magnetic iron oxide powder 失效
    含钴磁性氧化铁粉末的制造方法

    公开(公告)号：US4594267A

    公开(公告)日：1986-06-10

    申请号：US715775

    申请日：1985-03-25

    申请人： Ichiro Honma ,  Masaharu Hirai ,  Masatoshi Amano ,  Nobusuke Takumi

    发明人： Ichiro Honma ,  Masaharu Hirai ,  Masatoshi Amano ,  Nobusuke Takumi

    IPC分类号： C01G49/00 ,  G11B5/706 ,  H01F1/11 ,  C01G49/06

    CPC分类号： G11B5/70673

    摘要： A cobalt-containing magnetic iron oxide powder is provided by first coating a magnetic iron oxide base powder with a ferrous compound and then coating it with a cobalt compound. The cobalt-containing magnetic iron oxide powder provided is improved in stability of coercivity under aging and various other magnetic properties, and the magnetic tape produced by using the powder is also appreciably improved in stability of coercivity under aging as well as in various magnetic properties such as squareness, orientability and switching field distribution.

    摘要翻译： 提供含钴磁性氧化铁粉末，首先用铁化合物涂覆磁性氧化铁基底粉末，然后用钴化合物涂覆。 所提供的含钴磁性氧化铁粉末在老化和各种其它磁性能下的矫顽力的稳定性得到改善，并且通过使用粉末制造的磁带也在老化下矫顽力的稳定性以及各种磁性能 作为平方度，定向性和开关场分布。