公开(公告)号：US5238878A

公开(公告)日：1993-08-24

申请号：US019056

申请日：1993-02-18

申请人： Masahide Shinohara

发明人： Masahide Shinohara

IPC分类号： B05D1/00 ,  G03F7/16 ,  H01L21/027

CPC分类号： B05D1/005 ,  G03F7/162 ,  Y10S148/017

摘要： Upon the formation of a film on a semiconductor substrate by spin coating method, a polyimide precursor solution as a film forming solution is supplied dropwise onto the semiconductor substrate, and then the semiconductor substrate is started to be rotated at a low revolving speed of 1,000 rpm while pure water as an adhesion protecting liquid is injected upon the backside of the semiconductor substrate. By this operation, the polyimide precursor solution is spread out over the above surface of the semiconductor substrate by the rotation thereof. On the other hand, pure water is injected on the backside of the substrate before the dropped solution reaches the periphery of the substrate. As a result, the polyimide precursor liquid is prevented from going around to the backside of the substrate by the injection of pure water, thus protecting the adhesion of the polyimide precursor solution onto the backside of the substrate.

公开(公告)号：US20110078993A1

公开(公告)日：2011-04-07

申请号：US12997207

申请日：2009-08-07

申请人： Kunihiro Ohshima ,  Susumu Katsuen ,  Ippei Yamauchi ,  Masahide Shinohara

发明人： Kunihiro Ohshima ,  Susumu Katsuen ,  Ippei Yamauchi ,  Masahide Shinohara

IPC分类号： D02G3/02 ,  D06M14/18 ,  D06M14/02 ,  D06M14/08 ,  D02G3/04 ,  C23C14/02

CPC分类号： D06M14/00 ,  D02G3/449 ,  D10B2401/022 ,  Y10T428/2907

摘要： A sliver for spinning of the invention is a sliver for spinning having a deodorizing function and/or a heat-generating moisture absorption function, wherein a sliver for spinning formed as a bundle in which staple fibers are aligned in one direction is irradiated with an electron beam to provide an activating group and/or produce a radical on a surface of the fibers, and a compound including an ethylenic unsaturated double bond is chemically bonded to the surface of the fibers. A spun yarn of the invention is a spun yarn having a deodorizing function and/or a heat-generating moisture absorption function, including the above-described sliver for spinning that has been spun, or including the above-described sliver for spinning and a sliver other than the sliver for spinning that have been blended and spun. A fiber product of the invention has a deodorizing function and/or a heat-generating moisture absorption function, including the above-described spun yarn. Thereby, a sliver having a deodorizing function and/or a heat-generating moisture absorption function, a method for producing the sliver in an efficient and rational manner, and a spun yarn and a fiber product using the sliver are provided.

摘要翻译： 本发明的纺纱用纱条是具有除臭功能和/或发热吸湿功能的纺纱用纱条，其中将短纤维沿一个方向排列成束的纺丝条被照射电子 以提供活化基团和/或在纤维的表面上产生自由基，并且包含烯属不饱和双键的化合物化学键合到纤维表面。 本发明的短纤纱是具有除臭功能和/或发热吸湿功能的细纱，其特征在于，包括上述纺丝用纱条，或者包含上述纺纱用纱条和条子纱 除了已经混合和旋转的纺丝条之外。 本发明的纤维制品具有除臭功能和/或发热吸湿功能，其中包括上述细纱。 因此，提供了具有除臭功能和/或发热吸湿功能的条子，有效合理地生产纱条的方法，以及使用纱条的细纱和纤维制品。

公开(公告)号：US08215093B2

公开(公告)日：2012-07-10

申请号：US12997207

申请日：2009-08-07

申请人： Kunihiro Ohshima ,  Susumu Katsuen ,  Ippei Yamauchi ,  Masahide Shinohara

发明人： Kunihiro Ohshima ,  Susumu Katsuen ,  Ippei Yamauchi ,  Masahide Shinohara

IPC分类号： D02G3/02

CPC分类号： D06M14/00 ,  D02G3/449 ,  D10B2401/022 ,  Y10T428/2907

摘要： A sliver for spinning having a deodorizing and/or heat-generating moisture absorption function is provided, where a sliver for spinning formed as a bundle, in which staple fibers are aligned in one direction, is irradiated with an electron beam to provide an activating group and/or produce a radical on a surface of the fibers, and a compound including an ethylenic unsaturated double bond is chemically bonded to the surface of the fibers. A spun yarn of the invention is a spun yarn having a deodorizing and/or heat-generating moisture absorption function, including the above-described sliver for spinning that has been spun, or including the above-described sliver for spinning and a sliver other than the sliver for spinning that have been blended and spun. A fiber product of the invention has a deodorizing and/or heat-generating moisture absorption function, including the above-described spun yarn.

摘要翻译： 提供了一种具有除臭和/或发热吸湿功能的纺丝条，其中用电子束照射短纤维沿一个方向排列成束的纺丝条，以提供活化基团 和/或在纤维的表面上产生自由基，并且包含烯属不饱和双键的化合物化学键合在纤维的表面上。 本发明的细纱是具有除臭和/或发热吸湿功能的细纱，其特征在于，包括上述纺丝用纱条，或包含上述纺丝用纱条和除了 已经混纺和纺丝的纺纱条。 本发明的纤维制品具有除臭和/或发热的吸湿功能，包括上述细纱。

公开(公告)号：US6127099A

公开(公告)日：2000-10-03

申请号：US634442

申请日：1996-04-18

申请人： Masahide Shinohara

发明人： Masahide Shinohara

IPC分类号： H01L23/29 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213 ,  H01L23/31 ,  G03F7/26

CPC分类号： H01L23/3142 ,  H01L21/31138 ,  H01L23/3171 ,  H01L2924/0002

摘要： A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated. This reduces degassing in the event of the etching of the passivation film which immediately follows the first heat treatment.

摘要翻译： 公开了一种制造半导体衬底的方法，特别是具有缓冲涂层并且密封在模制树脂中的半导体衬底。 该方法对聚酰亚胺膜进行图案化，使用得到的聚酰亚胺图案作为掩模蚀刻绝缘膜或钝化膜，然后用氧等离子体对聚酰亚胺图案进行灰化，从而避免蚀刻所用蚀刻剂的影响。 因此，该方法能够减少金属布线图案暴露于外部的部分的腐蚀。 由于氧化灰化步骤之后进行热处理，因此消除了降低聚酰亚胺图案与模制树脂之间的粘附强度的氧的影响。 结果，保证了聚酰亚胺图案对模制树脂的紧密粘附。 此外，当在聚酰亚胺膜图案化之后进行第一次热处理时，聚酰亚胺膜中的溶剂蒸发。 这在钝化膜的蚀刻的情况下减少脱气，该钝化膜紧随第一热处理。

公开(公告)号：US06613699B2

公开(公告)日：2003-09-02

申请号：US10035325

申请日：2002-01-04

申请人： Toshio Banba ,  Takashi Hirano ,  Masahide Shinohara

发明人： Toshio Banba ,  Takashi Hirano ,  Masahide Shinohara

IPC分类号： H01L2131

CPC分类号： H01L21/31144 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/76802

摘要： A process for producing a semiconductor device which comprises forming a layer of an organic polymer resin on a surface of a semiconductor element, treating the formed layer by pattern working and curing, etching the element using the patterned and cured layer as a mask, exposing an electric conductive layer at open portions, treating the element with oxygen plasma at a temperature of 100° C. or higher and cleaning the electric conductive layer at the open portions. When the electric conductive layer at open portions is cleaned by the oxygen plasma treatment, formation of cracks on the organic protective layer is suppressed and adhesion between the organic protective layer and a sealing resin is improved.

摘要翻译： 一种半导体器件的制造方法，其包括在半导体元件的表面形成有机聚合物树脂层，通过图案加工和固化处理所形成的层，使用图案化和固化层作为掩模蚀刻元件， 在开放部分的导电层，在100℃或更高的温度下用氧等离子体处理元件，并且在开口部分清洁导电层。当通过氧等离子体处理清洁开口部分的导电层时， 抑制有机保护层上的裂纹的形成，有机保护层和密封树脂之间的粘合性提高。

公开(公告)号：US5783369A

公开(公告)日：1998-07-21

申请号：US634442

申请日：1996-04-18

申请人： Masahide Shinohara

发明人： Masahide Shinohara

摘要： A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated. This reduces degassing in the event of the etching of the passivation film which immediately follows the first heat treatment.