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    MAGNETIC SENSING ELEMENT
    1.
    发明申请
    MAGNETIC SENSING ELEMENT 有权
    磁感应元件

    公开(公告)号：US20080278866A1

    公开(公告)日：2008-11-13

    申请号：US12116499

    申请日：2008-05-07

    申请人： Masahiko Ishizone ,  Yasuo Hayakawa

    发明人： Masahiko Ishizone ,  Yasuo Hayakawa

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272

    摘要： At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression.

    摘要翻译： 在元件部分的两侧，具有较高剩余磁化强度Mr的第一硬偏置层和具有较高矫顽力Hc的第二硬偏置层从该底部依次沉积，第一硬偏置层的一端封闭 靠近自由磁性层。 整个硬偏压层中的第一硬偏压层的膜厚比为35％〜75％。 这使得自由磁性层中的磁化稳定化以减少不对称性，从而能够改善包括噪声抑制在内的再现特性的稳定性。

    Tunneling magnetic sensing element having two-layered hard bias layer
    2.
    发明授权
    Tunneling magnetic sensing element having two-layered hard bias layer 有权
    具有双层硬偏置层的隧道式磁感应元件

    公开(公告)号：US08072712B2

    公开(公告)日：2011-12-06

    申请号：US12116499

    申请日：2008-05-07

    申请人： Masahlko Ishizone ,  Yasuo Hayakawa

    发明人： Masahlko Ishizone ,  Yasuo Hayakawa

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272

    摘要： At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression.

    摘要翻译： 在元件部分的两侧，具有较高剩余磁化强度Mr的第一硬偏置层和具有较高矫顽力Hc的第二硬偏置层从该底部依次沉积，第一硬偏置层的一端封闭 靠近自由磁性层。 整个硬偏压层中的第一硬偏压层的膜厚比为35％〜75％。 这使得自由磁性层中的磁化稳定化以减少不对称性，从而能够改善包括噪声抑制在内的再现特性的稳定性。

    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF 审中-公开
    CPP型薄膜磁头及其制造方法

    公开(公告)号：US20070115595A1

    公开(公告)日：2007-05-24

    申请号：US11558345

    申请日：2006-11-09

    申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398

    摘要： a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

    摘要翻译： 提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件，以及确保绝缘性能的侧填充间隙层，其由薄的两个端面形成 所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部 凸部，薄膜磁头元件形成在凸部上，并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

    Soft magnetic alloy thin film and plane-type magnetic device
    5.
    发明授权
    Soft magnetic alloy thin film and plane-type magnetic device 失效
    软磁合金薄膜和平面型磁性装置

    公开(公告)号：US5896078A

    公开(公告)日：1999-04-20

    申请号：US545295

    申请日：1995-10-19

    申请人： Yasuo Hayakawa ,  Akihiro Makino

    发明人： Yasuo Hayakawa ,  Akihiro Makino

    IPC分类号： C23C14/14 ,  C22C38/00 ,  C22C45/02 ,  H01F10/00 ,  H01F10/13 ,  H01F10/14 ,  H01F17/00 ,  H01F41/04 ,  H01F27/30

    CPC分类号： B82Y25/00 ,  H01F10/007 ,  H01F10/131 ,  H01F10/136 ,  H01F10/147 ,  H01F17/0013 ,  H01F41/046

    摘要： A soft magnetic alloy thin film includes a fine crystalline phase and an amorphous phase. The fine crystalline phase includes an average crystalline grain size of 10 nm or less in diameter and has body-centered cubic structure mainly composed of Fe. The amorphous phase has a nitrogen (N) compound as the main composition and occupies at least 50% of the structure of the thin film. An element M is incorporated at least in the amorphous phase, and includes at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, W, and rare earth metal elements. A plane-type magnetic device is made using this thin film.

    摘要翻译： 软磁性合金薄膜包括细晶相和非晶相。 细结晶相的直径平均晶粒尺寸为10nm以下，主要由Fe构成的体心立方结构。 非晶相具有氮（N）化合物作为主要成分，占薄膜结构的至少50％。 元素M至少包含在非晶相中，并且包括选自Ti，Zr，Hf，V，Nb，Ta，W和稀土金属元素中的至少一种元素。 使用该薄膜制造平面型磁性装置。

    Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path
    7.
    发明授权
    Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path 有权
    具有反铁磁膜的自固定CPP巨磁阻磁头，不存在电流路径

    公开(公告)号：US07599155B2

    公开(公告)日：2009-10-06

    申请号：US10823474

    申请日：2004-04-13

    申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

    发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

    摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

    摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

    Thin film magnetic head having a gap layer with improved thermal conductivity
    9.
    发明授权
    Thin film magnetic head having a gap layer with improved thermal conductivity 失效
    薄膜磁头具有具有改善的导热性的间隙层

    公开(公告)号：US06252749B1

    公开(公告)日：2001-06-26

    申请号：US09154553

    申请日：1998-09-16

    申请人： Yasuo Hayakawa

    发明人： Yasuo Hayakawa

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10S977/934

    摘要： A thin film magnetic head comprises a lower gap layer composed of an adhesion layer formed of Al2O3 or the like, an AlN film having a high thermal conductivity and a protective layer formed of Al2O3 or the like. Since the lower gap layer comprises the AlN film, it has an extremely high thermal conductivity as compared to conventional equivalents. Accordingly, heat generated from a magnetroresistive element layer can be escaped through the lower gap layer to a lower shield layer so as to inhibit the temperature of element from elevating and to obtain a satisfactory regeneration sensitivity.

    摘要翻译： 薄膜磁头包括由Al 2 O 3等形成的粘附层构成的下间隙层，具有高导热性的AlN膜和由Al 2 O 3等形成的保护层。 由于下间隙层包含AlN膜，与传统的等效物相比，其具有极高的导热性。 因此，从磁阻元件层产生的热可以通过下间隙层逃逸到下屏蔽层，以便抑制元件的温度升高并获得令人满意的再生灵敏度。

    Method for making Fe-based soft magnetic alloy
    10.
    发明授权
    Method for making Fe-based soft magnetic alloy 失效
    制备铁基软磁合金的方法

    公开(公告)号：US6083325A

    公开(公告)日：2000-07-04

    申请号：US893768

    申请日：1997-07-11

    申请人： Teruo Bitoh ,  Yasuo Hayakawa ,  Takashi Hatanai ,  Akihiro Makino ,  Akihisa Inoue ,  Tsuyoshi Masumoto

    发明人： Teruo Bitoh ,  Yasuo Hayakawa ,  Takashi Hatanai ,  Akihiro Makino ,  Akihisa Inoue ,  Tsuyoshi Masumoto

    IPC分类号： H01F1/153 ,  H01F1/147

    CPC分类号： H01F1/15308 ,  H01F1/15341

    摘要： A method for making a Fe-based soft magnetic alloy where an alloy melt is injected onto a moving cooling unit to form an amorphous alloy ribbon. The alloy melt contains Fe as a main component, B and at least one metallic element M selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mo and W, the composition of the alloy melt being selected such that the resulting amorphous alloy ribbon is characterized by a first crystallization temperature at which fine grain bcc Fe crystallites precipitate, and a second crystallization temperature at which a compound phase containing Fe--B and/or Fe--M precipitates. The amorphous alloy ribbon is then annealed at a temperature which is higher that the first crystallization temperature and less than the second crystallization temperature for an annealing time in the range of 0 minutes to 20 minutes.

    摘要翻译： 一种制造Fe基软磁合金的方法，其中将合金熔体注入到移动的冷却单元上以形成非晶合金带。 合金熔体含有Fe作为主要成分，B和选自Ti，Zr，Hf，V，Nb，Ta，Mo和W中的至少一种金属元素M，选择合金熔体的组成使得 所得到的非晶合金带的特征在于细晶粒bcc Fe微晶析出的第一结晶温度和含有Fe-B和/或Fe-M的化合物相析出的第二结晶温度。 然后在0分钟至20分钟的范围内，在比第一结晶温度高且低于第二结晶温度的退火时间的温度下退火非晶态合金带。