公开(公告)号：US08474396B2

公开(公告)日：2013-07-02

申请号：US12836137

申请日：2010-07-14

申请人： Masahiro Fukuda ,  Atsushi Ookouchi ,  Taro Yamamoto

发明人： Masahiro Fukuda ,  Atsushi Ookouchi ,  Taro Yamamoto

IPC分类号： B05B7/16

CPC分类号： H01L21/6715 ,  G03F7/3021 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/68771

摘要： Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid.

摘要翻译： 提供了一种显影装置，其被配置为在减少显影模块的数量的同时使抗蚀剂图案变薄。 室温显影液和高温显影液可以从公共喷嘴供给到设置在安装台上的基板上。 虽然通过在室温显影液的供给线和高温显影液的供给路之间切换来顺序地排出显影液，但是也可以将这些供给管线从前者供给室温显影液 供应线，然后调整两条供应线之间的流量比，然后将显影液体的混合液体作为高温显影液供应。

公开(公告)号：US20070012339A1

公开(公告)日：2007-01-18

申请号：US11345529

申请日：2006-02-02

申请人： Masahiro Fukuda ,  Taro Yamamoto

发明人： Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/68742

摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.

摘要翻译： 通过真空吸盘42将晶片W保持在气密容器41内的水平姿态，使得在晶片W和气密容器41的内表面之间形成小的间隙。 通过作为流体供给路径5的端部的流体供给口40朝向晶片W的前表面的中央部供给清洗液，通过配置在流体供给路径5的底部的流体排出部44排出 气密容器41是沿其圆周方向延伸的凹槽的形式，其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部向周边部分流动并扩散，同时除去附着在晶片W上的颗粒 晶片W，并通过流体排出部分44排出。 这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

公开(公告)号：US08001983B2

公开(公告)日：2011-08-23

申请号：US12716981

申请日：2010-03-03

申请人： Masahiro Fukuda ,  Taro Yamamoto

发明人： Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： B08B3/04 ,  B08B11/02

CPC分类号： H01L21/67051 ,  H01L21/68742

摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.

摘要翻译： 通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液 通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着 其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部 这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

公开(公告)号：US07712475B2

公开(公告)日：2010-05-11

申请号：US11345529

申请日：2006-02-02

申请人： Masahiro Fukuda ,  Taro Yamamoto

发明人： Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： B08B3/04 ,  B05C5/00 ,  B05C5/02 ,  B05C3/02

CPC分类号： H01L21/67051 ,  H01L21/68742

摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.

摘要翻译： 通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液 通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着 其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部 这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

公开(公告)号：US20100154834A1

公开(公告)日：2010-06-24

申请号：US12716981

申请日：2010-03-03

申请人： Masahiro Fukuda ,  Taro Yamamoto

发明人： Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/68742

摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44.This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.

摘要翻译： 通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液 通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着 其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部 这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

公开(公告)号：US20090145489A1

公开(公告)日：2009-06-11

申请号：US11719347

申请日：2005-11-07

申请人： Hiroyasu Goto ,  Masahiro Fukuda ,  Taro Yamamoto

发明人： Hiroyasu Goto ,  Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： F16L53/00 ,  F17D1/14

CPC分类号： G05D23/1919 ,  Y10T137/6416

摘要： ABSTRACT A method and a system for controlling temperature of a liquid in small flow amount, for supplying a liquid whose temperature is highly accurately controlled, as a flow of a small flow amount or an intermittent flow. A liquid supplied from a supply path is pressurized and introduced into a circulation path, and is temperature-controlled by a temperature control device in the circulation path, while being circulated in the circulation path by a pump in the pressurized condition. The liquid is supplied to an exterior device through a discharge path caused to branch from the circulation path, as a consecutive flow in a small amount or an intermittent flow in a small amount in a flow amount less than at least ½ times the flow amount in the circulation path, by adjusting a discharge valve provided in the discharge path.

摘要翻译： 摘要：一种用于控制小流量的液体的温度的方法和系统，用于将温度高度精确控制的液体作为小流量或间歇流量的流动。 从供给路径供给的液体被加压并引入循环路径，并且通过循环路径中的温度控制装置进行温度控制，同时在加压状态下通过泵在循环路径中循环。 液体通过从循环路径分支的排出路径供给到外部装置，作为少量的连续流量或少量的少量的间歇流量，流量少于流量的至少1/2的流量 循环路径，通过调节设置在排出路径中的排出阀。

公开(公告)号：US07896254B2

公开(公告)日：2011-03-01

申请号：US11719347

申请日：2005-11-07

申请人： Hiroyasu Goto ,  Masahiro Fukuda ,  Taro Yamamoto

发明人： Hiroyasu Goto ,  Masahiro Fukuda ,  Taro Yamamoto

IPC分类号： F24F11/053 ,  G05D23/00 ,  B41J2/175 ,  B41J2/18

CPC分类号： G05D23/1919 ,  Y10T137/6416

摘要： A method and a system for controlling temperature of a liquid in small flow amount, for supplying a liquid whose temperature is highly accurately controlled, as a flow of a small flow amount or an intermittent flow. A liquid supplied from a supply path is pressurized and introduced into a circulation path, and is temperature-controlled by a temperature control device in the circulation path, while being circulated in the circulation path by a pump in the pressurized condition. The liquid is supplied to an exterior device through a discharge path caused to branch from the circulation path, as a consecutive flow in a small amount or an intermittent flow in a small amount in a flow amount less than at least ½ times the flow amount in the circulation path, by adjusting a discharge valve provided in the discharge path.

摘要翻译： 用于以小流量或间歇流量流动用于将温度高度精确地控制的液体供给到小流量的液体的温度的方法和系统。 从供给路径供给的液体被加压并引入循环路径，并且通过循环路径中的温度控制装置进行温度控制，同时在加压状态下通过泵在循环路径中循环。 液体通过从循环路径分支的排出路径供给到外部装置，作为少量的连续流量或少量的少量的间歇流量，流量少于流量的至少1/2的流量 循环路径，通过调节设置在排出路径中的排出阀。

公开(公告)号：US08889337B2

公开(公告)日：2014-11-18

申请号：US11934308

申请日：2007-11-02

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03F7/09 ,  B05C11/02 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67

CPC分类号： G03F7/2041 ,  G03F7/11 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/6715

摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

摘要翻译： 提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。 成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括 晶片的周边以及诸如保护膜的表面膜的周边。

公开(公告)号：US08578953B2

公开(公告)日：2013-11-12

申请号：US12000670

申请日：2007-12-14

申请人： Yasushi Takiguchi ,  Taro Yamamoto ,  Akihiro Fujimoto ,  Shuuichi Nishikido ,  Dai Kumagai ,  Naoto Yoshitaka ,  Takahiro Kitano ,  Yoichi Tokunaga

发明人： Yasushi Takiguchi ,  Taro Yamamoto ,  Akihiro Fujimoto ,  Shuuichi Nishikido ,  Dai Kumagai ,  Naoto Yoshitaka ,  Takahiro Kitano ,  Yoichi Tokunaga

IPC分类号： B08B3/00 ,  B08B1/02

CPC分类号： H01L21/0209 ,  B08B1/002 ,  B08B1/04 ,  B08B3/02 ,  B08B5/02 ,  B08B7/0057 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/68742 ,  H01L21/68764

摘要： A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.

摘要翻译： 公开的用于清洁基板的背面的基板清洁装置包括：第一基板支撑部，其构造成在基板的背面的第一区域处支撑基板，所述背面朝下; 第二基板支撑部，其构造成在所述基板的背面的第二区域处支撑所述基板，所述第二区域与所述第一区域分离; 清洗液供给部，构成为向所述基板的背面供给清洗液; 干燥部，其构造成干燥所述基板的背面的第二区域; 以及清洁部，其构造成当所述基板被所述第一基板支撑部支撑所述基板时，清洁所述基板的背面的第三区域，所述第三区域包括所述第二区域以及所述基板的背面的第四区域， 基板由第二基板支撑部分支撑，除了后表面的第二区域之外的第四区域。

公开(公告)号：US08518494B2

公开(公告)日：2013-08-27

申请号：US11672230

申请日：2007-02-07

申请人： Taro Yamamoto ,  Hideharu Kyouda

发明人： Taro Yamamoto ,  Hideharu Kyouda

IPC分类号： B05D1/36

CPC分类号： H01L21/67017 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/70341 ,  H01L21/67051 ,  H01L21/6715

摘要： Disclosed is a technique for preventing a water-repellent protective film formed on a resist film from peeling off during immersion exposure. A resist film is formed on the front surface of a substrate and then the peripheral edge portion of the resist film is removed. Before forming a water-repellent protective film onto the resist film, an adhesion-improving fluid, preferably hexamethyldisilazane gas, for improving the adhesion of the water-repellent protective film, is supplied to the region from which the resist film is removed.