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    MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL
    1.
    发明申请
    MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL 有权
    13号硝酸盐晶体的制造方法

    公开(公告)号：US20130061799A1

    公开(公告)日：2013-03-14

    申请号：US13592555

    申请日：2012-08-23

    申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

    发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

    IPC分类号： C30B19/02

    CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

    摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

    摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度L为9.7mm以上，c面的长度L与晶体直径d的比L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

    GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE
    2.
    发明申请
    GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE 有权
    第13组氮化物晶体和第13组氮化物晶体基板

    公开(公告)号：US20130064749A1

    公开(公告)日：2013-03-14

    申请号：US13609077

    申请日：2012-09-10

    申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

    发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

    IPC分类号： C01B21/06 ,  C01B21/072 ,  C01B21/064

    CPC分类号： C30B7/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/607

    摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

    摘要翻译： 具有六方晶系结构并且至少包含氮原子和至少一个选自B，Al，Ga，In和Tl的金属原子的13族氮化物晶体。 13族氮化物晶体包括设置在与c轴交叉的横截面的内侧的第一区域，设置在截面最外侧的第三区域，并且具有与第一区域不同的晶体特性， 所述第二区域至少部分地设置在所述第一区域和所述第三区域之间，所述第二区域是晶体生长的过渡区域，并且具有与所述第一区域和所述第三区域不同的晶体特性。