公开(公告)号：US20080258264A1

公开(公告)日：2008-10-23

申请号：US12137929

申请日：2008-06-12

申请人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

发明人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

IPC分类号： H01L29/20 ,  H01L21/469

CPC分类号： H01L29/7881 ,  H01L29/40114 ,  H01L29/513

摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

摘要翻译： 公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

公开(公告)号：US20050142769A1

公开(公告)日：2005-06-30

申请号：US11011044

申请日：2004-12-15

申请人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

发明人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/283 ,  H01L21/31 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/469 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7881 ,  H01L29/40114 ,  H01L29/513

摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

摘要翻译： 公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

公开(公告)号：US20060186488A1

公开(公告)日：2006-08-24

申请号：US11407066

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US20060186489A1

公开(公告)日：2006-08-24

申请号：US11407077

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

公开(公告)号：US07053455B2

公开(公告)日：2006-05-30

申请号：US10772280

申请日：2004-02-06

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94 ,  H01L31/62

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

公开(公告)号：US07348644B2

公开(公告)日：2008-03-25

申请号：US11407077

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US07300838B2

公开(公告)日：2007-11-27

申请号：US11407066

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L21/8238

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US06326670B1

公开(公告)日：2001-12-04

申请号：US09522593

申请日：2000-03-10

申请人： Akira Nishiyama ,  Masahiro Koike

发明人： Akira Nishiyama ,  Masahiro Koike

IPC分类号： H01L31119

CPC分类号： H01L21/28185 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31662 ,  H01L21/31691 ,  H01L29/41783 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66575 ,  H01L29/66659 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a Si oxide film formed between a Si substrate and a metallic oxide film is prevented from growing when an annealing treatment is performed after the metallic oxide film is formed, and a method for manufacturing the same. A semiconductor device comprises a silicon substrate, a gate insulating film formed on the silicon substrate and made of the metallic oxide film, and a gate electrode formed on the gate insulating film, wherein an interface film formed between the gate insulating film and the Si substrate is thinner at the ends of the gate insulating film than in the center thereof.

摘要翻译： 一种半导体器件包括在形成在Si衬底和金属氧化物膜之间形成的Si氧化物膜时，在形成金属氧化物膜之后进行退火处理时，可以防止生长Si氧化膜及其制造方法。1。一种半导体器件，包括硅 基板，形成在硅基板上并由金属氧化物膜构成的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中形成在栅极绝缘膜和Si基板之间的界面膜在端部处较薄 栅绝缘膜比其中心。

公开(公告)号：US08154072B2

公开(公告)日：2012-04-10

申请号：US12403493

申请日：2009-03-13

申请人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

公开(公告)号：US09014531B2

公开(公告)日：2015-04-21

申请号：US13143414

申请日：2010-01-13

申请人： Junichi Gokurakuji ,  Shuhei Miura ,  Masahiro Koike ,  Masayuki Uwabo ,  Takumi Okazaki ,  Chihiro Harada

发明人： Junichi Gokurakuji ,  Shuhei Miura ,  Masahiro Koike ,  Masayuki Uwabo ,  Takumi Okazaki ,  Chihiro Harada

IPC分类号： H04N5/765 ,  H04N5/931 ,  H04N5/782 ,  G11B27/10 ,  G11B27/32 ,  H04N21/433 ,  H04N21/472 ,  H04N5/775

CPC分类号： H04N5/782 ,  G11B27/105 ,  G11B27/32 ,  H04N5/775 ,  H04N21/4331 ,  H04N21/4334 ,  H04N21/47214

摘要： A transmitting section of the present invention initiates transmission of a second video continuously after completing transmission of a first video being transmitted, in a case that a reproduction position of the first video being transmitted is beyond an end point of the first video, when a video recording start time of a second video stored in a video storage section and a video recording end time of the first video being transmitted coincide within a predetermined time difference.

摘要翻译： 在发送的第一视频的再现位置超过第一视频的终点的情况下，本发明的发送部分在完成发送的第一视频的传输之后，连续发起第二视频的传输，当视频 存储在视频存储部分中的第二视频的记录开始时间和正在发送的第一视频的视频记录结束时间在预定时间差内重合。