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1.发明授权公开(公告)号：US07010084B1
公开(公告)日：2006-03-07
申请号：US10920464
申请日：2004-08-18
IPC分类号： G01N23/08
CPC分类号： G01T1/1644 , A61B6/032 , G01T1/2985
摘要： A light detector includes a plurality of light receiving sections which are formed in a substrate and generate signal charges corresponding to the amount of incident light, and a plurality of wirings which are formed on the substrate and fetch the signal charges from the light receiving sections, wherein at least some of the plurality of wirings are disposed so as to overlap with other light receiving sections different from the light receiving sections connected to fetch the signal charges.
摘要翻译： 光检测器包括多个光接收部分，其形成在基板中并产生与入射光量相对应的信号电荷;以及多个布线，其形成在基板上并从光接收部分获取信号电荷， 其中所述多个布线中的至少一些布置成与与所述光接收部分不同的其它光接收部分重叠以提取所述信号电荷。
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公开(公告)号：US20130170615A1
公开(公告)日：2013-07-04
申请号：US13339222
申请日：2011-12-28
CPC分类号： H04N5/32 , A61B6/42 , A61B6/4208 , A61B6/4233 , A61B6/482 , G01J1/00 , G01N23/04 , G01T1/2018 , G01T1/24 , H01L31/00 , H04N5/361
摘要： A radiation detector is provided that provides fast sequential image acquisition. In one embodiment, the radiation detector a diode capacitor that is charged in response to a radiation exposure event. The charge stored in the diode capacitor is transferred to a separate storage capacitor, allowing a new charge to be generated and stored at the diode capacitor.
摘要翻译： 提供了一种提供快速顺序图像采集的辐射检测器。 在一个实施例中，辐射检测器是响应于辐射曝光事件而被充电的二极管电容器。 存储在二极管电容器中的电荷被转移到单独的存储电容器，允许在二极管电容器处产生新的电荷并存储。
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3.发明授权公开(公告)号：US06396046B1
公开(公告)日：2002-05-28
申请号：US09643228
申请日：2000-08-22
IPC分类号： H01L2700
CPC分类号： H01L27/14663 , H01L27/14609 , H01L27/14623
摘要： A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.
摘要翻译： 公开了一种设置在辐射成像器的开关装置（例如TFT）的感光区域上的光阻材料。 光阻止材料防止从闪烁体发出的光子光子进入开关装置并被吸收。 因此，成像器中的串扰和噪声被降低。 此外，避免了非线性像素响应和传递到读出电子装置的寄生信号。 可选地，包含相同的光块材料的不透明盖可以包括在成像器结构中。 帽盖覆盖填充有公共电极并位于成像器的接触指状区域中的接触通孔。 从而在随后的处理期间保持填充的通孔的完整性。 还公开了包含这些结构的辐射成像仪。
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公开(公告)号：US5777355A
公开(公告)日：1998-07-07
申请号：US772446
申请日：1996-12-23
IPC分类号： H01L27/14 , H01L27/146 , H01L31/04 , H01L31/10 , H01L27/148 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14623
摘要： A radiation imager having a plurality of photosensitive elements has a two-tier passivation layer disposed between the top patterned common electrode contact layer and respective photosensor islands. The top passivation layer is a polymer bridge member disposed between adjacent photodiodes so as to isolate defects such as moisture-induced leakage in any bridge island layer to the two adjacent photodiodes spanned by the bridge island.
摘要翻译： 具有多个感光元件的辐射成像器具有设置在顶部图案化的公共电极接触层和相应的光电传感器岛之间的双层钝化层。 顶部钝化层是设置在相邻的光电二极管之间的聚合物桥构件，以便将任何桥岛层中的水分诱发泄漏的缺陷隔离到由桥岛跨越的两个相邻的光电二极管。
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公开(公告)号：US07019304B2
公开(公告)日：2006-03-28
申请号：US10681767
申请日：2003-10-06
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.
摘要翻译： 具有背面照射的固态成像仪。 本发明提供了一种固态成像器，其包括适于接收入射辐射的基本上辐射透明的衬底。 辐射通过基片和像素化的感光元件阵列到闪烁体材料，其吸收辐射。 感光元件的像素化阵列接收光子并测量与闪烁体材料的辐射相互作用产生的光量。 有了这个成像器，传播和模糊就越少，从而形象越好。 在另一个实施例中，存在设置在像素化的感光元件阵列和闪烁体材料之间的基本上透明的材料。 基本上透明的材料吸收并基本上阻挡电子进入感光元件的像素化阵列的有源区域。 这使得成像器能够根据其规格执行更长的时间。
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公开(公告)号：US06504158B2
公开(公告)日：2003-01-07
申请号：US09729124
申请日：2000-12-04
申请人： George Edward Possin
发明人： George Edward Possin
IPC分类号： H01L3106
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14687
摘要： An imaging array of photodiodes on a chip cut from a semiconductor wafer includes a guard diode at each cut edge to reduce leakage current from the cut edges when the imaging array is in use. The photodiodes and guard diode may be fabricated from the same materials during the same process step. Electrical contacts coupled to the imaging array provide a mechanism for applying a reverse electrical bias to the photodiodes and guard region with respect to the wafer.
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公开(公告)号：US06465286B2
公开(公告)日：2002-10-15
申请号：US09681070
申请日：2000-12-20
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L27/14609 , H01L27/14692
摘要： RD-25953-17-A method of fabricating an imager array having a plurality of pixels is provided in which each pixel is made up of a photodiode and a corresponding thin film transistor (TFT) switching device, the method including the steps of depositing materials to form the photodiode island and to form a TFT body over a gate electrode, then depositing a layer of source/drain metal over the silicon layers of the TFT body, and over a common dielectric layer, removing sections of the source/drain metal layer to expose a portion of the silicon layers of the TFT body, but leaving regions of sacrificial source/drain metal over the photodiode islands, and forming a back channel in the TFT body by a back channel etch step. The method further includes then removing the sacrificial regions of source/drain metal from above the photodiode islands, and depositing a passivation layer over the entire exposed surface of the array.
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公开(公告)号：US06740884B2
公开(公告)日：2004-05-25
申请号：US10116469
申请日：2002-04-03
IPC分类号： H01L2100
CPC分类号： H01L27/14658
摘要： A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.
摘要翻译： 一种辐射检测器，包括：一个包括源电极，漏电极，栅电极，第一电介质层和第二电介质层的顶栅极薄膜晶体管，其中第二电介质层在第一电介质层的表面上延伸 电介质层。 辐射检测器还包括包括至少两个电极和电介质层的电容器。 电容器电介质层与TFT第二电介质层一体地形成。
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9.发明授权Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination 失效优化的闪烁体和像素化光电二极管检测器阵列，用于使用背面照明的多层CT X射线检测器公开(公告)号：US06707046B2
公开(公告)日：2004-03-16
申请号：US10035266
申请日：2002-01-03
IPC分类号： G01T124
CPC分类号： H01L27/14663
摘要： A photodiode detector array includes a layer of intrinsic semiconductor material having a first doped layer on a first surface of a first conductivity type and an array of photodiodes having respective doped regions on a second surface of an opposite conductivity type. Electrical contacts on the second surface respectively contact the doped regions and convey electrical signal therefrom. Conductors extend from the electrical contacts to convey the electrical signals to output terminals of the array. A scintillator is optically coupled to the layer of intrinsic semiconductor material at the first surface thereof and can be pixelated, with individual scintillator elements aligned with and corresponding to the doped regions of the photodiode. The photodiode detector array can be mounted to a rigid printed wiring board or to a flat bottom wall surface of the scintillator.
摘要翻译： 光电二极管检测器阵列包括在第一导电类型的第一表面上具有第一掺杂层的本征半导体材料层和在相反导电类型的第二表面上具有相应掺杂区域的光电二极管阵列。 第二表面上的电触点分别与掺杂区接触并传送电信号。 导体从电触点延伸，将电信号传送到阵列的输出端。 闪烁体在其第一表面处与本征半导体材料层光学耦合，并且可以被像素化，其中各个闪烁体元件与光电二极管的掺杂区域对准并对应。 光电二极管检测器阵列可以安装到刚性印刷线路板或闪烁器的平坦底壁表面。
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公开(公告)号：US06680216B2
公开(公告)日：2004-01-20
申请号：US10187241
申请日：2002-07-02
IPC分类号： H01L2100
CPC分类号： H01L31/022408 , H01L27/14603
摘要： In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium tin oxide). Similarly, exposed preimidized polyimide edges in electrical contacts for the array and bridge members electrically coupling adjacent light-sensitive imaging elements are also sealed with the material of the common electrode.
摘要翻译： 在具有感光元件阵列并使用条纹公共电极的成像器中，用感光成像元件上方的预聚酰亚胺层的暴露边缘用公共电极材料（例如氧化铟锡）密封。 类似地，用于阵列的电触头中暴露的预聚酰亚胺边缘和电耦合相邻感光成像元件的桥接元件也用公共电极的材料密封。
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