公开(公告)号：US06613635B2

公开(公告)日：2003-09-02

申请号：US10015756

申请日：2001-12-17

申请人： Masahiro Oda ,  Kazuhiro Sasada

发明人： Masahiro Oda ,  Kazuhiro Sasada

IPC分类号： H01L21336

CPC分类号： H01L21/823878 ,  H01L21/76237 ,  H01L21/823807

摘要： Threshold voltage fluctuation in upper corner portions of a trench isolation is inhibited by rounding upper corner portions of the trench by thermal oxidation, introducing a first impurity into both upper corner portions of the trench and heat-treating the semiconductor substrate. Embodiments include increasing the threshold voltage in the upper corner portion of the trench in an n-channel transistor, previously increased by rounding oxidation, and introducing a p-type impurity, thereby canceling the threshold voltage reduction resulting from diffusion of the impurity during heat-treating the semiconductor substrate. In a p-channel transistor, the threshold voltage in the upper corner portion of the trench is increased by rounding oxidation thereby canceling the threshold voltage reduction resulting from introduction of the p-type first impurity into both upper corner portions of the trench.

摘要翻译： 沟槽隔离的上角部的阈值电压波动通过热氧化对沟槽的上角部进行四舍五入，将第一杂质引入槽的两个上角部并对半导体衬底进行热处理来抑制。 实施例包括增加先前通过四舍五入氧化增加的n沟道晶体管中的沟槽的上角部分中的阈值电压，以及引入p型杂质，从而消除由于杂质在热处理期间的扩散而引起的阈值电压降低， 处理半导体衬底。 在p沟道晶体管中，通过舍入氧化来增加沟槽上角部分中的阈值电压，从而抵消由于将p型第一杂质引入沟槽的两个上角部而导致的阈值电压降低。

公开(公告)号：US06887767B2

公开(公告)日：2005-05-03

申请号：US10392878

申请日：2003-03-21

申请人： Mayumi Nakasato ,  Kazuhiro Sasada ,  Masahiro Oda

发明人： Mayumi Nakasato ,  Kazuhiro Sasada ,  Masahiro Oda

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76235

摘要： A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成缓冲膜，形成元件分隔沟槽，在元件分隔沟槽的表面上形成氧化膜，并用氢氟酸洗涤半导体衬底。 洗涤物去除部分缓冲膜，缓冲膜的端部从元件分隔槽的顶部边缘向内移除预定距离。 氧化膜的距离和厚度由表达式0 <= x <=（d /2sinθ）表示，其中x表示距离，θ表示平行于半导体衬底的平面与侧面之间的角度 元件分隔沟的表面。

公开(公告)号：US20050200711A1

公开(公告)日：2005-09-15

申请号：US11074863

申请日：2005-03-09

申请人： Ryu Shimizu ,  Kazuhiro Sasada ,  Masahiro Oda

发明人： Ryu Shimizu ,  Kazuhiro Sasada ,  Masahiro Oda

IPC分类号： H01L27/148 ,  H04N5/225

CPC分类号： H01L27/14614 ,  H01L27/14806 ,  H01L27/1485 ,  H04N5/335 ,  H04N5/372

摘要： A solid state imaging device includes photoelectric conversion portions for performing photoelectric conversion, and transfer portions for transferring signal charge occurring at the photoelectric conversion portions. Each transfer portion includes a transfer electrode formed of polysilicon film or the like, and an insulating coating film formed of a material such as a silicon nitride film and so forth, which has a higher relative dielectric constant than that of the silicon oxide, for coating the bottom face, the upper face, and both side faces, of the transfer electrode. The silicon nitride film is formed with a film thickness which is greater than 0 nm and smaller than 60 nm, on both sides of the transfer electrode.

摘要翻译： 固态成像装置包括用于进行光电转换的光电转换部分和用于传送在光电转换部分发生的信号电荷的转印部分。 每个转印部分包括由多晶硅膜等形成的转印电极和由诸如氮化硅膜等的材料形成的绝缘涂膜，其具有比氧化硅更高的相对介电常数，用于涂覆 转印电极的底面，上表面和两个侧面。 在转移电极的两侧，形成厚度大于0nm且小于60nm的氮化硅膜。

公开(公告)号：US06890831B2

公开(公告)日：2005-05-10

申请号：US10449726

申请日：2003-06-02

申请人： Mayumi Nakasato ,  Makoto Izumi ,  Kazuhiro Sasada ,  Masahiro Oda ,  Toru Dan

发明人： Mayumi Nakasato ,  Makoto Izumi ,  Kazuhiro Sasada ,  Masahiro Oda ,  Toru Dan

IPC分类号： H01L21/762 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/76235 ,  H01L21/823878

摘要： A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.

摘要翻译： 获得了能够提高栅极绝缘膜的可靠性的半导体装置的制造方法。 这种制造半导体器件的方法包括通过热处理在半导体层的主表面上形成栅极绝缘膜的步骤，并且形成栅绝缘膜的步骤包括在包含氧化物的气氛中进行热处理的步骤 气体温度超过导致栅极绝缘膜的粘性流动的温度，从而在半导体层的主表面上形成栅极绝缘膜。

公开(公告)号：US09267589B2

公开(公告)日：2016-02-23

申请号：US14001671

申请日：2012-01-24

申请人： Ryohei Shigematsu ,  Takafumi Hirata ,  Shinji Iino ,  Soichi Nakayama ,  Takeshi Nakamura ,  Masahiro Oda ,  Kenichi Katsube

发明人： Ryohei Shigematsu ,  Takafumi Hirata ,  Shinji Iino ,  Soichi Nakayama ,  Takeshi Nakamura ,  Masahiro Oda ,  Kenichi Katsube

IPC分类号： F16H37/12 ,  F16H1/14 ,  F16H19/04 ,  F16H21/28 ,  F16H3/22 ,  B60N2/02 ,  F16H37/06 ,  F16H1/22 ,  F16D125/28 ,  F16D23/12

CPC分类号： F16H37/065 ,  B60N2/0296 ,  F16D2023/123 ,  F16D2125/28 ,  F16H1/222 ,  F16H3/22 ,  F16H19/04 ,  F16H21/28 ,  Y10T74/19019

摘要： The present invention obtains a multi-shaft drive device that can protect a rack and pinion from operative load input to a selector. The multi-shaft drive device is provided with: an input-side bevel gear (52) to which motor power is transmitted; and an output-side bevel gear (34) that transmits the power transmitted from the input-side bevel gear (52) to a movable mechanism. The multi-shaft drive device is further provided with: a selector (10) that connects/disconnects the meshing of the output-side bevel gear (34) and the input-side bevel gear (52); and a rotating shaft (16) that causes the selector (10) to slide via a rack (18) and pinion (17). Furthermore, the angle of rotation of the rotating shaft (16) is regulated by the end of the pinion (17) contacting a vertical wall (1A) of a case (1).

摘要翻译： 本发明获得一种多轴驱动装置，其可以保护齿条和小齿轮免受输入到选择器的操作负载。 多轴驱动装置设有：输入侧锥齿轮（52），电动机功率传递到该输入侧锥齿轮; 以及将从输入侧锥齿轮（52）传递的动力传递到可动机构的输出侧锥齿轮（34）。 多轴驱动装置还具备：连接/断开输出侧锥齿轮（34）与输入侧锥齿轮（52）的啮合的选择器（10）。 以及使选择器（10）经由齿条（18）和小齿轮（17）滑动的旋转轴（16）。 此外，旋转轴（16）的旋转角度由与壳体（1）的垂直壁（1A）接触的小齿轮（17）的端部来调节。

公开(公告)号：US20130327166A1

公开(公告)日：2013-12-12

申请号：US14001849

申请日：2012-01-26

申请人： Takeshi Nakamura ,  Masahiro Oda ,  Kenichi Katsube ,  Ryohei Shigematsu ,  Shinji Iino

发明人： Takeshi Nakamura ,  Masahiro Oda ,  Kenichi Katsube ,  Ryohei Shigematsu ,  Shinji Iino

IPC分类号： F16H19/08

CPC分类号： F16H19/08 ,  B60N2/0232 ,  B60N2/0296 ,  B60N2002/0236 ,  F16H37/065 ,  Y10T74/188

摘要： A power transmission member that transmits rotation of an output shaft to a movable mechanism achieves a simpler structure and increased productivity compared to when a conventional flexible cable is employed. Out of plural output portions 30 of a clutch unit 2, power transmission members that transmit rotation of an output shaft 31 to a movable mechanism are configured by a conventional torque cable in a second output portion 30B and a third output portion 30C. However in a first output portion 30A, the power transmission member is configured by a gearbox 3 including a worm 71 that is coaxially and integrally formed with an output shaft 31A.

摘要翻译： 将输出轴的旋转传递到可移动机构的动力传递构件与使用常规柔性线缆相比，实现了更简单的结构和提高的生产率。 在离合器单元2的多个输出部30中，将输出轴31的旋转传递到可动机构的动力传递部件由第二输出部30B和第三输出部30C中的常规扭矩电缆构成。 然而，在第一输出部30A中，动力传递部件由齿轮箱3构成，齿轮箱3包括与输出轴31A同轴且一体形成的蜗杆71。

公开(公告)号：US20080271352A1

公开(公告)日：2008-11-06

申请号：US10585870

申请日：2005-01-19

申请人： Takeshi Nakayama ,  Akira Abe ,  Dai Shimizu ,  Fumihiro Itoshima ,  Kazuo Harada ,  Masahiro Oda ,  Yasuhiro Makii

发明人： Takeshi Nakayama ,  Akira Abe ,  Dai Shimizu ,  Fumihiro Itoshima ,  Kazuo Harada ,  Masahiro Oda ,  Yasuhiro Makii

IPC分类号： G09F13/02

CPC分类号： G09F13/02 ,  G09F13/42

摘要： There is provided a traffic sign apparatus that can improve the luminance of a sign surface which emits light by ultraviolet irradiation, and the uniformity ratio of illuminance, so as to enhance the visibility thereof in the nighttime. The traffic sign apparatus 10 includes a sign body 11 having the sign surface 14 which emits light by ultraviolet irradiation, and an irradiation device 12 for irradiating ultraviolet rays onto the sign surface 14. Assuming that the maximum incident angle of the ultraviolet rays be θ1, the ultraviolet rays being irradiated from the ultraviolet emission lamps 26 of the irradiation unit 12 onto the objective sign surfaces W1 and W2 on the sign surface 14 which is the irradiation object of the ultraviolet emission lamps 26; and that the minimum incident angle be θ2, the angle θ1 is set to more than 30° and less than 70°; and the angle θ 2 is set to more than 5° and less than 30°.

摘要翻译： 提供一种交通标志装置，其可以通过紫外线照射提高发光的标志面的亮度和照度的均匀性，从而提高夜间的可见度。 交通标志装置10包括具有通过紫外线照射发光的标志面14的标志体11和用于将紫外线照射在标志面14上的照射装置12。 假设紫外线的最大入射角为θ1，则从照射单元12的紫外线发射灯26照射到作为照射对象的标志面14上的物体标记面W 1，W 2上的紫外线 的紫外线发射灯26; 并且最小入射角为θ2，将角度θ设定为大于30°并小于70°; 并且角度θ2设定为大于5°且小于30°。

公开(公告)号：US20070298598A1

公开(公告)日：2007-12-27

申请号：US11889921

申请日：2007-08-17

申请人： Yasuhiro Takeda ,  Isao Nakano ,  Kazuhiro Kaneda ,  Masahiro Oda

发明人： Yasuhiro Takeda ,  Isao Nakano ,  Kazuhiro Kaneda ,  Masahiro Oda

IPC分类号： H01L21/265

CPC分类号： H01L29/0847 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device capable of improving the operating speed and inhibiting the threshold voltage from fluctuation is obtained. In this semiconductor device, fluorine is introduced into at least any of regions extending over the junction interfaces between a first conductivity type semiconductor region and second conductivity type source/drain regions, at least the interface between the gate insulator film and the central region of a channel region as well as a gate insulator film, and side wall insulator films.

摘要翻译： 获得能够提高工作速度并抑制阈值电压波动的半导体器件。 在该半导体器件中，氟被引入到在第一导电类型半导体区域和第二导电类型源极/漏极区域之间的连接界面上延伸的区域中的至少一个区域中，至少栅极绝缘膜和中间区域之间的界面 沟道区以及栅极绝缘膜和侧壁绝缘膜。

公开(公告)号：US20050162536A1

公开(公告)日：2005-07-28

申请号：US11033303

申请日：2005-01-12

申请人： Masahiro Oda ,  Makoto Izumi

发明人： Masahiro Oda ,  Makoto Izumi

IPC分类号： H04N3/14 ,  H04N5/225 ,  H04N5/235 ,  H04N5/3725

CPC分类号： H04N5/3725

摘要： The present invention provides an imaging device capable of suppressing deterioration of image quality due to shortage of the amount of light. The imaging device comprises an imaging part which performs photoelectric conversion; a mixing part which mixes electrons corresponding to at least two of pixels transferred from the imaging part; and an electron-ejection gate electrode which has a length in the transfer direction smaller than the length in the transfer direction of a gate electrode of later stage and ejects the electrons mixed by the mixing part.

摘要翻译： 本发明提供一种能够抑制由于光量不足引起的图像质量劣化的成像装置。 成像装置包括执行光电转换的成像部件; 混合部分，其混合对应于从所述成像部分传送的至少两个像素的电子; 以及电子喷射栅电极，其传送方向上的长度小于后级栅电极的传送方向上的长度，并且喷射由混合部分混合的电子。

公开(公告)号：US20080179495A1

公开(公告)日：2008-07-31

申请号：US12023721

申请日：2008-01-31

申请人： Ryu SHIMIZU ,  Masahiro Oda

发明人： Ryu SHIMIZU ,  Masahiro Oda

IPC分类号： H01L27/148

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

摘要： This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

摘要翻译： 该图像传感器包括用于增加电荷量的电荷增加部分，用于将调节与电荷增加部分相邻的区域的电压施加到规定电位的第一电极，与第一电极相邻设置的用于施加另一个电压增加的第二电极 电荷增加部分中的电荷量，形成在用于向第一电极提供信号的规定层上的第一线和形成在与规定层不同的层上的第二线，用于向第二电极提供另一信号。