公开(公告)号：US07258744B2

公开(公告)日：2007-08-21

申请号：US10516347

申请日：2003-12-08

申请人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

发明人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

IPC分类号： C30B35/00 ,  C30B15/20

CPC分类号： C30B15/14 ,  Y10T117/10

摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.

摘要翻译： 本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分， 围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度 上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。 因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。

公开(公告)号：US20050205004A1

公开(公告)日：2005-09-22

申请号：US10516347

申请日：2003-12-08

申请人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

发明人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

IPC分类号： C30B15/14 ,  C30B35/00 ,  C30B1/00

CPC分类号： C30B15/14 ,  Y10T117/10

摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.

摘要翻译： 本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分， 围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度 上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。 因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。

公开(公告)号：US07294196B2

公开(公告)日：2007-11-13

申请号：US10512470

申请日：2003-05-07

申请人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.

摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。

公开(公告)号：US07129123B2

公开(公告)日：2006-10-31

申请号：US10500580

申请日：2003-10-24

申请人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： H01L21/84 ,  H01L31/36 ,  C30B15/20

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/005 ,  C30B33/04 ,  C30B33/06 ,  C30B33/10

摘要： In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.

摘要翻译： 在制造SOI晶片的方法中，包括从接合晶片表面注入离子以在晶片内部形成离子注入层的步骤，通过氧化膜或直接键合离子注入的接合晶片表面和基底晶片的表面 ，并且通过在离子注入层处热处理接合晶片的一部分来形成SOI晶片，接合晶片是由通过Czochralski方法生长的硅单晶组成的硅晶片，其被N区域外部占据 OSF以环形形成，并且没有通过Cu沉积法检测到缺陷区域。 因此，即使是厚度为200nm以下的极薄的SOI层也能够提供具有优异的电性能的SOI晶片，而不会产生由酸清洗引起的微凹坑，并且可以在不增加工艺数的情况下制造。

公开(公告)号：US20060174819A1

公开(公告)日：2006-08-10

申请号：US10561865

申请日：2004-05-27

申请人： Nobuaki Mitamura ,  Tomohiko Ohta ,  Izumi Fusegawa ,  Masahiro Sakurada ,  Atsushi Ozaki

发明人： Nobuaki Mitamura ,  Tomohiko Ohta ,  Izumi Fusegawa ,  Masahiro Sakurada ,  Atsushi Ozaki

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/203

摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。

公开(公告)号：US20060113594A1

公开(公告)日：2006-06-01

申请号：US10542376

申请日：2004-01-22

申请人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa

发明人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa

IPC分类号： H01L27/12

CPC分类号： C30B29/06 ,  C30B15/203 ,  H01L21/76251

摘要： An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.

摘要翻译： 其中分别由硅单晶构成的基底晶片和接合晶片通过氧化膜结合的SOI晶片，然后将接合晶片变薄以形成硅有源层，其中，基底晶片由单晶硅单晶 通过切克劳斯基法，基底晶片的整个表面在OSF区域外的N区域内，并且不包括通过Cu沉积法检测的缺陷区域，或者基底晶片的整个表面在OSF区域外的区域内， 不包括通过Cu沉积法检测的缺陷区域，并且包括由于间隙硅而含有位错簇的I区域。 由此，提供了即使在形成例如厚度为100nm以下的极薄的层间电介质氧化膜的情况下，也能够在器件制造中保持高绝缘性且具有优异的电可靠性的SOI晶片。

公开(公告)号：US06893499B2

公开(公告)日：2005-05-17

申请号：US10312921

申请日：2001-06-28

申请人： Izumi Fusegawa ,  Koji Kitagawa ,  Ryoji Hoshi ,  Masahiro Sakurada ,  Tomohiko Ohta

发明人： Izumi Fusegawa ,  Koji Kitagawa ,  Ryoji Hoshi ,  Masahiro Sakurada ,  Tomohiko Ohta

IPC分类号： C30B15/00 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203

摘要： According to the present invention, there is disclosed a silicon single crystal wafer grown according to the CZ method which is a wafer having a diameter of 200 mm or more produced from a single crystal grown at a growth rate of 0.5 mm/min or more without doping except for a dopant for controlling resistance, wherein neither an octahedral void defect due to vacancies nor a dislocation cluster due to interstitial silicons exists as a grown-in defect, and a method for producing it. There can be provided a high quality silicon single crystal wafer having a large diameter wherein a silicon single crystal in which both of octahedral void defects and dislocation clusters which are growth defects are substantially eliminated is grown at higher rate compared with the conventional method by the usual CZ method, and furthermore by controlling a concentrations of interstitial oxygen in the crystal to be low, a precipitation amount is lowered and ununiformity of BMD in a plane of the wafer is improved, and provided a method for producing it.

摘要翻译： 根据本发明，公开了一种根据CZ方法生长的硅单晶晶片，其是由以0.5mm / min以上的生长速度生长的单晶产生的直径为200mm以上的晶片的晶片，没有 除了用于控制电阻的掺杂剂之外的掺杂，其中由于间隙硅而由空位引起的八面体空隙缺陷和位错簇都不作为生长缺陷而存在，以及其制造方法。 可以提供具有大直径的高质量硅单晶晶片，其中以常规方法与常规方法相比，以更高的速率生长其中八面体空隙缺陷和作为生长缺陷的位错簇基本上消除的硅单晶 CZ法，另外通过将晶体中的间隙氧的浓度控制得较低，降低析出量，提高晶片的平面内的BMD的不均匀性，并提供其制造方法。

公开(公告)号：US20100126409A1

公开(公告)日：2010-05-27

申请号：US11988295

申请日：2006-04-27

申请人： Masahiro Sakurada ,  Izumi Fusegawa

发明人： Masahiro Sakurada ,  Izumi Fusegawa

IPC分类号： C30B15/20

CPC分类号： C30B15/305 ,  C30B30/04

摘要： This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.

摘要翻译： 本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量 （O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。 根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以 容易以高产率高产率生产。

公开(公告)号：US20060065184A1

公开(公告)日：2006-03-30

申请号：US10538878

申请日：2003-12-25

申请人： Masahiro Sakurada ,  Izumi Fusegawa

发明人： Masahiro Sakurada ,  Izumi Fusegawa

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/203 ,  C30B15/04 ,  C30B29/06

摘要： The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2×1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.

摘要翻译： 本发明是通过Czochralski法制备P（磷）掺杂硅单晶的方法，其中至少进行单晶的生长使得Al（铝）浓度为2×10 12， / SUP> atoms / cc以上。 因此，可以提供一种容易且廉价地制造具有优异的电特性能力高的无缺陷区域的P（磷）掺杂硅单晶为高的击穿电压的方法，其既不含V区 ，OSF区域，也不是大型位错簇（LSEPD，LFPD）区域。

公开(公告)号：US20050252441A1

公开(公告)日：2005-11-17

申请号：US10512470

申请日：2003-05-07

申请人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

发明人： Masahiro Sakurada ,  Nobuaki Mitamura ,  Izumi Fusegawa ,  Tomohiko Ohta

IPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/322 ,  C30B33/06 ,  C30B21/06 ,  C30B27/02

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.

摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。