摘要:
A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K1yy≧K1xx>K1zz, where directional components of a three-dimensional thermal conductivity of the heat sink section in X, Y, and Z directions are determined as Kxx, Kyy, and Kzz. A relation among directional components of a thermal conductivity of the second heat sink section is K2zz≧K2yy>K2xx or K2yy≧K2zz>K2xx, where the directional components of the thermal conductivity of the second heat sink section in X, Y, and X directions are determined as K2xx, K2yy, and K2zz.
摘要:
A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K1yy≧K1xx>K1zz, where directional components of a three-dimensional thermal conductivity of the heat sink section in X, Y, and Z directions are determined as Kxx, Kyy, and Kzz. A relation among directional components of a thermal conductivity of the second heat sink section is K2zz≧K2yy>K2xx or K2yy≧K2zz>K2xx, where the directional components of the thermal conductivity of the second heat sink section in X, Y, and X directions are determined as K2xx, K2yy, and K2zz.
摘要:
A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz≧Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.
摘要:
A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz≧Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.
摘要:
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x
摘要翻译:公开了一种HJFET 110,其包括:由In y Ga 1-y N(0&lt; n 1; y&n 1; 1)构成的沟道层12; 载体供给层13由Al x Ga 1-x N(0&lt; n 1; x&n 1; 1)组成,载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S,漏极电极15D和栅极电极17,其通过p型层面对沟道层12,并且设置在载流子供给层13上。满足以下关系式:5.6×10 11× NA×&eegr×T [cm-2] <5.6×1013x,其中x表示载流子供应层的Al组成比,t表示p型层的厚度,NA表示杂质浓度,&eegr; 表示活化比。
摘要:
In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature.
摘要:
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x
摘要翻译:公开了一种HJFET 110,其包括:由In y Ga 1-y N(0 @ y 1)组成的沟道层12; 由Al x Ga 1-x N(0 @ x 1)构成的载流子供给层13,载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S,漏极电极15D和栅极电极17,其通过p型层面对沟道层12,并且设置在载流子供给层13上。满足以下关系式:5.6×10×11× NA×eta×t [cm-2] <5.6×1013x,其中x表示载体供给层的Al组成比,t表示所述p型层的厚度,NA表示杂质浓度,eta表示活化 比。
摘要:
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x
摘要翻译:公开了一种HJFET 110,其包括:由In y Ga 1-y N(0&lt; n 1; y&n 1; 1)构成的沟道层12; 载体供给层13由Al x Ga 1-x N(0&lt; n 1; x&n 1; 1)组成,载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S,漏极电极15D和栅极电极17,其通过p型层面对沟道层12,并且设置在载流子供给层13上。满足以下关系式:5.6×10 11× NA×&eegr×T [cm-2] <5.6×1013x,其中x表示载流子供应层的Al组成比,t表示p型层的厚度,NA表示杂质浓度,&eegr; 表示活化比。
摘要:
In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature.
摘要翻译:在III族氮化物型场效应晶体管中,本发明通过缓冲层中的残留载流子的传导来减少漏电流成分,并且可以实现击穿电压的提高,并提高载流子限制效应(载流子限制) 提高夹断特性的通道(抑制短路效应)。 例如,当将本发明应用于GaN型场效应晶体管时,除了沟道层的GaN之外,使用其中铝组成逐渐或逐步朝向顶部的组分调制(组成梯度)AlGaN层用作 缓冲层(杂质缓冲液)。 对于要制备的FET的栅极长度Lg,选择电子供给层和沟道层的层厚度的和a以满足Lg / a> = 5,并且在这种情况下, 在不超过5倍(约500)的范围内选择通道层,只要在室温下积聚在通道层中的二维电子气的德布罗意波长即可。
摘要:
A field effect transistor includes a layer structure made of compound semiconductor (111) provided on a semiconductor substrate (110) made of GaAs or InP, as an operation layer, and employs a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When, in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region, in which the second field plate electrode overlaps the upper part of a structure composed of the first field plate electrode and a gate electrode (113), is designated as Lol, and the gate length is Lg, the relation expressed as 0≦Lol/Lg≦1 holds.