摘要:
With a scanning probe microscope, if a plurality of sample properties are measured using a scanning scheme of allowing a probe to approach and withdraw from a sample, the sample properties need to be accurately and reliably detected in the minimum required measurement time. Further, the acting force between the probe and the sample varies depending on the type of the probe and the wear condition of a probe tip. Thus, disadvantageously, property values acquired using different probes cannot be compared with one another unless the artifactual effect of the measuring probes are eliminated. In accordance with the present invention, with a scanning probe microscope, the probe is brought into intermittent contact with the sample, while driving means repeatedly allows the probe to approach and withdraw from the sample with a variable amplitude. The sample property is thus acquired at a high speed. Further, a calibration sample is used in a given environment (given temperature and humidity) to acquire a force curve for at least one point. Information obtained from the force curve is used to correct measurements to display the distribution of the sample property.
摘要:
With a scanning probe microscope, if a plurality of sample properties are measured using a scanning scheme of allowing a probe to approach and withdraw from a sample, the sample properties need to be accurately and reliably detected in the minimum required measurement time. Further, the acting force between the probe and the sample varies depending on the type of the probe and the wear condition of a probe tip. Thus, disadvantageously, property values acquired using different probes cannot be compared with one another unless the artifactual effect of the measuring probes are eliminated. In accordance with the present invention, with a scanning probe microscope, the probe is brought into intermittent contact with the sample, while driving means repeatedly allows the probe to approach and withdraw from the sample with a variable amplitude. The sample property is thus acquired at a high speed. Further, a calibration sample is used in a given environment (given temperature and humidity) to acquire a force curve for at least one point. Information obtained from the force curve is used to correct measurements to display the distribution of the sample property.
摘要:
A scanning probe microscope, capable of performing shape measurement not affected by electrostatic charge distribution of a sample, which: monitors an electrostatic charge state by detecting a change in a flexure or vibrating state of a cantilever due to electrostatic charges in synchronization with scanning during measurement with relative scanning between the probe and the sample, and makes potential adjustment so as to cancel an influence of electrostatic charge distribution, thus preventing damage of the probe or the sample due to discharge and achieving reduction in measurement errors due to electrostatic charge distribution.
摘要:
A scanning probe microscope, capable of performing shape measurement not affected by electrostatic charge distribution of a sample, which: monitors an electrostatic charge state by detecting a change in a flexure or vibrating state of a cantilever due to electrostatic charges in synchronization with scanning during measurement with relative scanning between the probe and the sample, and makes potential adjustment so as to cancel an influence of electrostatic charge distribution, thus preventing damage of the probe or the sample due to discharge and achieving reduction in measurement errors due to electrostatic charge distribution.
摘要:
In the case of measuring a pattern having a steep side wall, a probe adheres to the side wall by the van der Waals forces acting between the probe and the side wall when approaching the pattern side wall, and an error occurs in a measured profile of the side wall portion. When a pattern having a groove width almost equal to a probe diameter is measured, the probe adheres to both side walls, the probe cannot reach the groove bottom, and the groove depth cannot be measured. When the probe adheres to a pattern side wall in measurements of a microscopic high-aspect ratio pattern using an elongated probe, the probe is caused to reach the side wall bottom by detecting the adhesion of the probe to the pattern side wall, and temporarily increasing a contact force between the probe and the sample. Also, by obtaining the data of the amount of torsion of a cantilever with the shape data of the pattern, a profile error of the side wall portion by the adhesion is corrected by the obtained data of the amount of torsion.
摘要:
In the case of measuring a pattern having a steep side wall, a probe adheres to the side wall by the van der Waals forces acting between the probe and the side wall when approaching the pattern side wall, and an error occurs in a measured profile of the side wall portion. When a pattern having a groove width almost equal to a probe diameter is measured, the probe adheres to both side walls, the probe cannot reach the groove bottom, and the groove depth cannot be measured. When the probe adheres to a pattern side wall in measurements of a microscopic high-aspect ratio pattern using an elongated probe, the probe is caused to reach the side wall bottom by detecting the adhesion of the probe to the pattern side wall, and temporarily increasing a contact force between the probe and the sample. Also, by obtaining the data of the amount of torsion of a cantilever with the shape data of the pattern, a profile error of the side wall portion by the adhesion is corrected by the obtained data of the amount of torsion.
摘要:
In the case of measuring a pattern having a steep side wall, a probe adheres to the side wall by the van der Waals forces acting between the probe and the side wall when approaching the pattern side wall, and an error occurs in a measured profile of the side wall portion. When a pattern having a groove width almost equal to a probe diameter is measured, the probe adheres to both side walls, the probe cannot reach the groove bottom, and the groove depth cannot be measured. When the probe adheres to a pattern side wall in measurements of a microscopic high-aspect ratio pattern using an elongated probe, the probe is caused to reach the side wall bottom by detecting the adhesion of the probe to the pattern side wall, and temporarily increasing a contact force between the probe and the sample. Also, by obtaining the data of the amount of torsion of a cantilever with the shape data of the pattern, a profile error of the side wall portion by the adhesion is corrected by the obtained data of the amount of torsion.
摘要:
A displacement measurement method, an apparatus thereof, and a probe microscope. which enable stable measure an amount of displacement and a moving distance of an object under measurement with an accuracy of the sub-nanometer order or below without being affected by disturbances such as fluctuations of air and mechanical vibration. A pulsed beam is split into two; one beam is reflected by an object under measurement and then inputted to a delay optical path equivalent to one pulse period; and the other beam is sent through the same delay optical path in the opposite direction up to the object under measurement with a delay of one pulse period, and then reflected by the object under measurement. An optical phase variation caused by the movement of the object under measurement is obtained by subjecting the two pulsed beams to interference.
摘要:
The present invention provides a displacement measurement method, an apparatus thereof, a probe microscope. which make it possible to stably measure an amount of displacement and a moving distance of an object under measurement with an accuracy of the sub-nanometer order or below without being affected by disturbances such as fluctuations of air, mechanical vibration.Specifically, with the present invention, a pulsed beam is split into two; one beam is reflected by an object under measurement and then inputted to a delay optical path equivalent to one pulse period; and the other beam is sent through the same delay optical path in the opposite direction up to the object under measurement with a delay of one pulse period, and then reflected by the object under measurement. Then, an optical phase variation caused by the movement of the object under measurement is obtained by subjecting the two pulsed beams to interference.
摘要:
A scanning probe microscope for measuring a surface shape of a sample by scanning a probe by bringing said probe close to, or into contact with, a sample surface and measuring a physical interaction occurring between the probe and the sample, includes a measurement area specific which specifies a measurement area of the sample on the basis of the image of the sample surface, and a measurement shape corrector which corrects the measurement result of the sample surface on the basis of the condition of the probe.