摘要:
A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer.
摘要:
A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer.
摘要:
A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.
摘要:
A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.
摘要:
A piezoelectric element comprising a first electrode, a piezoelectric layer containing bismuth lanthanum iron and manganese formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer contains crystals preferentially oriented in a (111) plane.
摘要:
A liquid ejecting head includes a pressure generating chamber communicating with a nozzle aperture, and a piezoelectric element including a piezoelectric layer and electrodes that apply a voltage to the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure. The piezoelectric layer contains bismuth, barium, iron and titanium. The piezoelectric layer has an intensity ratio of a (111) orientation intensity to a (100) orientation intensity of 3 or more.
摘要:
A piezoelectric element comprising a first electrode, a piezoelectric layer containing bismuth lanthanum iron and manganese formed above the first electrode, and a second electrode formed above the piezoelectric layer. The piezoelectric layer contains crystals preferentially oriented in a (111) plane.
摘要:
A piezoelectric element comprising a piezoelectric layer containing bismuth, lanthanum iron manganese and titanium and a electrode formed above the piezoelectric layer.
摘要:
A piezoelectric element comprising a piezoelectric layer containing bismuth, lanthanum iron manganese and titanium and a electrode formed above the piezoelectric layer.
摘要:
A ferroelectric capacitor includes: a ferroelectric film, and a lower electrode and an upper electrode interposing the ferroelectric film, wherein the ferroelectric film includes a first ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a metal organic chemical vapor deposition method, a second ferroelectric layer of ferroelectric material in which a part of B site element in ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 is replaced with Nb, and a third ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a sol-gel method, which are sequentially laminated from the side of the lower electrode.