Ferroelectric capacitor and its manufacturing method
    10.
    发明授权
    Ferroelectric capacitor and its manufacturing method 失效
    铁电电容器及其制造方法

    公开(公告)号:US08345461B2

    公开(公告)日:2013-01-01

    申请号:US12045135

    申请日:2008-03-10

    申请人: Masahisa Nawano

    发明人: Masahisa Nawano

    IPC分类号: G11C11/22

    摘要: A ferroelectric capacitor includes: a ferroelectric film, and a lower electrode and an upper electrode interposing the ferroelectric film, wherein the ferroelectric film includes a first ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a metal organic chemical vapor deposition method, a second ferroelectric layer of ferroelectric material in which a part of B site element in ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 is replaced with Nb, and a third ferroelectric layer of ferroelectric material having a perovskite type crystal structure expressed by a general formula ABO3 formed by a sol-gel method, which are sequentially laminated from the side of the lower electrode.

    摘要翻译: 强电介质电容器包括:强电介质膜,以及插入铁电体膜的下电极和上电极,其中,所述强电介质膜包括具有由金属形成的通式ABO3表示的钙钛矿型晶体结构的铁电体的第一铁电体层 有机化学气相沉积法,其中用Nb代替由具有由通式ABO3表示的钙钛矿型晶体结构的铁电材料中的B位元素的一部分的铁电体材料的第二铁电层和具有Nb的铁电体的第三铁电层, 由溶胶 - 凝胶法形成的通式ABO3表示的钙钛矿型晶体结构从下电极的一侧依次层叠。