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    Semiconductor device for signal amplification
    2.
    发明授权
    Semiconductor device for signal amplification 有权

    公开(公告)号：US08320854B2

    公开(公告)日：2012-11-27

    申请号：US12721261

    申请日：2010-03-10

    申请人： Masakazu Mizokami ,  Takaya Maruyama ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Takaya Maruyama ,  Kazuaki Hori

    IPC分类号： H01Q11/12 ,  H04B1/04

    摘要： A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC , the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120206201A1

    公开(公告)日：2012-08-16

    申请号：US13360323

    申请日：2012-01-27

    申请人： Masakazu Mizokami ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Kazuaki Hori

    IPC分类号： H03G3/20 ,  H03F3/45

    CPC分类号： H03F3/245 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/223 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45654 ,  H03F3/72 ,  H03F2200/222 ,  H03F2200/301 ,  H03F2200/453 ,  H03F2200/462 ,  H03F2200/555 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45212 ,  H03F2203/45418 ,  H03F2203/45544 ,  H03F2203/45728 ,  H03F2203/7209 ,  H03F2203/7221 ,  H03F2203/7236 ,  H03G3/3042

    摘要： A variable gain amplifier circuit includes output nodes, a plurality of amplifiers, and a detection circuit. The amplifiers are coupled in parallel with each other between the output nodes and a reference node and selectively assume an operating state in accordance with a control signal. The detection circuit outputs a detection signal according to the magnitude of an input signal to each amplifier. Each amplifier includes a first transistor, a second transistor, and a bias circuit. The first transistor receives, at its control electrode, the input signal or a signal proportional to the input signal. The second transistor is series-coupled to the first transistor between the first reference node and an output node. The bias circuit applies a DC voltage of a magnitude according to the detection signal to a control electrode of the second transistor.

    摘要翻译： 可变增益放大器电路包括输出节点，多个放大器和检测电路。 放大器在输出节点和参考节点之间彼此并联耦合，并且根据控制信号选择性地采取操作状态。 检测电路根据输入信号的幅度向每个放大器输出检测信号。 每个放大器包括第一晶体管，第二晶体管和偏置电路。 第一晶体管在其控制电极处接收与输入信号成比例的输入信号或信号。 第二晶体管与第一参考节点和输出节点之间的第一晶体管串联耦合。 偏置电路将根据检测信号的幅度的DC电压施加到第二晶体管的控制电极。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08618879B2

    公开(公告)日：2013-12-31

    申请号：US13360323

    申请日：2012-01-27

    申请人： Masakazu Mizokami ,  Kazuaki Hori

    发明人： Masakazu Mizokami ,  Kazuaki Hori

    IPC分类号： H03G3/20

    CPC分类号： H03F3/245 ,  H03F1/0266 ,  H03F1/0277 ,  H03F1/223 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/45179 ,  H03F3/45654 ,  H03F3/72 ,  H03F2200/222 ,  H03F2200/301 ,  H03F2200/453 ,  H03F2200/462 ,  H03F2200/555 ,  H03F2203/21142 ,  H03F2203/21175 ,  H03F2203/45212 ,  H03F2203/45418 ,  H03F2203/45544 ,  H03F2203/45728 ,  H03F2203/7209 ,  H03F2203/7221 ,  H03F2203/7236 ,  H03G3/3042

    摘要： A variable gain amplifier circuit includes output nodes, a plurality of amplifiers, and a detection circuit. The amplifiers are coupled in parallel with each other between the output nodes and a reference node and selectively assume an operating state in accordance with a control signal. The detection circuit outputs a detection signal according to the magnitude of an input signal to each amplifier. Each amplifier includes a first transistor, a second transistor, and a bias circuit. The first transistor receives, at its control electrode, the input signal or a signal proportional to the input signal. The second transistor is series-coupled to the first transistor between the first reference node and an output node. The bias circuit applies a DC voltage of a magnitude according to the detection signal to a control electrode of the second transistor.

    摘要翻译： 可变增益放大器电路包括输出节点，多个放大器和检测电路。 放大器在输出节点和参考节点之间彼此并联耦合，并且根据控制信号选择性地采取操作状态。 检测电路根据输入信号的幅度向每个放大器输出检测信号。 每个放大器包括第一晶体管，第二晶体管和偏置电路。 第一晶体管在其控制电极处接收与输入信号成比例的输入信号或信号。 第二晶体管与第一参考节点和输出节点之间的第一晶体管串联耦合。 偏置电路将根据检测信号的幅度的DC电压施加到第二晶体管的控制电极。