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    Chemically-amplified positive resist composition and patterning process thereof
    1.
    发明授权
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US08202677B2

    公开(公告)日：2012-06-19

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/04 ,  G03F7/028 ,  G03F7/40

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process
    2.
    发明授权
    Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权
    锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08691490B2

    公开(公告)日：2014-04-08

    申请号：US13013506

    申请日：2011-01-25

    申请人： Masaki Ohashi ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Keiichi Masunaga ,  Takeshi Kinsho

    发明人： Masaki Ohashi ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Keiichi Masunaga ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  C07C69/54 ,  C07C309/67

    CPC分类号： C07C69/54 ,  C08F220/38 ,  G03F7/004 ,  G03F7/20

    摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

    摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

    Chemically-amplified positive resist composition and patterning process thereof
    4.
    发明申请
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US20100009286A1

    公开(公告)日：2010-01-14

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    7.
    发明申请
    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    新型光电发生器，电阻组合和图案处理

    公开(公告)号：US20090061358A1

    公开(公告)日：2009-03-05

    申请号：US12204685

    申请日：2008-09-04

    申请人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07J5/00 ,  C07J43/00

    CPC分类号： C07J31/006 ,  C07J41/0055 ,  C07J43/003 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/114

    摘要： Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3+H+  (1a) R1—O—COOCH(CF3)CF2SO3−H+  (1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

    摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）或（1c）的磺酸。 <？in-line-formula description =“In-line formula”end =“lead”？> R1-COOCH（CF3）CF2SO3 + H +（1a）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R1-O-COOCH（CF3）CF2SO3-H +（1c） =“内联式”末端=“尾”→R1是具有类固醇结构的C20-C50烃基。 光致酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增幅抗蚀剂组合物。