Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
    4.
    发明申请
    Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
    新型磺酸盐和衍生物,光酸产生剂,抗蚀剂组合物和图案化方法

    公开(公告)号:US20070099113A1

    公开(公告)日:2007-05-03

    申请号:US11588414

    申请日:2006-10-27

    IPC分类号: G03C1/00

    摘要: Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

    摘要翻译: 磺酸盐具有下式:CF 3 -CH(OH)-CF 2 SO 3 SO 2 - > + +其中M + +是Li,Na,K,铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基,所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好,包括涂层,预烘烤,曝光,曝光后烘烤和显影步骤。 在ArF浸没光刻期间,光致酸发生器几乎不受水晶体上剩余的水分的影响。