摘要:
The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要:
A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要:
The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要:
Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.
摘要翻译:磺酸盐具有下式:CF 3 -CH(OH)-CF 2 SO 3 SO 2 - > + +其中M + +是Li,Na,K,铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基,所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好,包括涂层,预烘烤,曝光,曝光后烘烤和显影步骤。 在ArF浸没光刻期间,光致酸发生器几乎不受水晶体上剩余的水分的影响。
摘要:
A hydroxyl-containing monomer of formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent C1-C15 hydrocarbon groups, or R2 and R3 may form an aliphatic ring. The monomers are useful for the synthesis of polymers which have high transparency to radiation of up to 500 nm and the effect of controlling acid diffusion so that the polymers may be used as a base resin to formulate radiation-sensitive resist compositions having a high resolution.
摘要:
A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要:
Novel ester compounds having formulae (1) to (4) wherein A1 is a polymerizable functional group having a carbon-carbon double bond, A2 is oxygen, methylene or ethylene, R1 is a monovalent hydrocarbon group, R2 is H or a monovalent hydrocarbon group, any pair of R1 and/or R2 may form an aliphatic hydrocarbon ring, R3 is a monovalent hydrocarbon group, and n is 0 to 6 are polymerizable into polymers. Resist compositions comprising the polymers as a base resin are thermally stable and sensitive to high-energy radiation, have excellent sensitivity and resolution, and lend themselves to micropatterning with electron beam or deep-UV.
摘要:
Novel polymerizable ester compounds having formulae (1) to (4) undergo no acid-induced decomposition by β-elimination wherein A1 is a polymerizable functional group having a carbon-carbon double bond, R1 is H or —C—(R5)3, R2 and R3 are alkyl, R4 is H or alkyl, R5 is a monovalent hydrocarbon group, X is alkylene, Y is methylene, ethylene or isopropylidene, Z is alkylene, and n=1 or 2. Resist compositions comprising polymers derived from the ester compounds have excellent sensitivity and resolution and lend themselves to micropatterning lithography.
摘要:
Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(═O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.
摘要:
Novel polymerizable ester compounds having formulae (1) to (4) undergo no acid-induced decomposition by β-elimination wherein A1 is a polymerizable functional group having a carbon-carbon double bond, R1 is H or —C—(R5)3, R2 and R3 are alkyl, R4 is H or alkyl, R5 is a monovalent hydrocarbon group, X is alkylene, Y is methylene, ethylene or isopropylidene, Z is alkylene, and n=1 or 2. Resist compositions comprising polymers derived from the ester compounds have excellent sensitivity and resolution and lend themselves to micropatterning lithography.