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公开(公告)号：US20090202943A1
公开(公告)日：2009-08-13
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/00 , C08F228/02 , C08F24/00
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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公开(公告)号：US08609889B2
公开(公告)日：2013-12-17
申请号：US12828557
申请日：2010-07-01
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/028 , G03F7/26 , C07C309/06 , C07C309/07
CPC分类号： C07C309/12 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要翻译： 光致酸发生剂产生在磺酸盐部分中具有大体积的环状结构的磺酸和直链烃基，因此显示受控的酸扩散行为和适当的迁移率。 PAG与树脂完全兼容以形成在器件制造过程中表现良好的抗蚀剂组合物，并解决了分辨率，LWR和曝光宽容度的问题。
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公开(公告)号：US08062828B2
公开(公告)日：2011-11-22
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译： 正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。 聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。
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公开(公告)号：US20110003247A1
公开(公告)日：2011-01-06
申请号：US12828557
申请日：2010-07-01
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/20 , G03F7/004 , C07C69/753
CPC分类号： C07C309/12 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要翻译： 光致酸发生剂产生在磺酸盐部分中具有大体积的环状结构的磺酸和直链烃基，因此显示受控的酸扩散行为和适当的迁移率。 PAG与树脂完全兼容以形成在器件制造过程中表现良好的抗蚀剂组合物，并解决了分辨率，LWR和曝光宽容度的问题。
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5.发明申请Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US20070099113A1
公开(公告)日：2007-05-03
申请号：US11588414
申请日：2006-10-27
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , C07C309/08 , C07C381/12 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.
摘要翻译： 磺酸盐具有下式：CF 3 -CH（OH）-CF 2 SO 3 SO 2 - > + +其中M + +是Li，Na，K，铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基，所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好，包括涂层，预烘烤，曝光，曝光后烘烤和显影步骤。 在ArF浸没光刻期间，光致酸发生器几乎不受水晶体上剩余的水分的影响。
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公开(公告)号：US08114571B2
公开(公告)日：2012-02-14
申请号：US12433370
申请日：2009-04-30
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
CPC分类号： C07J9/00 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation. R1—COOCH2CF2SO3−H+ (1a) R1—O—COOCH2CF2SO3−H+ (1b) R1 is a monovalent C20-C50 hydrocarbon group of steroid structure which may contain a heteroatom. The bulky steroid structure ensures adequate control of acid diffusion. The photoacid generators are compatible with resins and suited for use in chemically amplified resist compositions.
摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）或（1b）的磺酸。 R1-COOCH2CF2SO3-H +（1a）R1-O-COOCH2CF2SO3-H +（1b）R1是可以含有杂原子的类固醇结构的一价C 20 -C 50烃基。 庞大的类固醇结构确保充分控制酸扩散。 光致酸发生器与树脂相容并且适用于化学放大抗蚀剂组合物。
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公开(公告)号：US08114570B2
公开(公告)日：2012-02-14
申请号：US12410357
申请日：2009-03-24
IPC分类号： G03F7/004 , G03F7/30 , C07D307/00 , C07C309/03 , C07C309/19
CPC分类号： G03F7/0045 , C07C25/18 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07D333/46 , C07D493/08 , C07D493/18 , C08K5/42 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , Y10S430/111
摘要： Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. ROC(═O)R1—COOCH2CF2SO3−H+ (1a) RO is OH or C1-C20 organoxy, R1 is a divalent C1-C20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）的磺酸。 ROC（= O）R1-COOCH2CF2SO3-H +（1a）RO是OH或C1-C20有机氧基，R1是二价C1-C20脂族基团或与RO形成环状结构。 光致酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增幅抗蚀剂组合物。
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公开(公告)号：US07670751B2
公开(公告)日：2010-03-02
申请号：US12204685
申请日：2008-09-04
申请人： Masaki Ohashi , Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho
发明人： Masaki Ohashi , Youichi Ohsawa , Takeru Watanabe , Takeshi Kinsho
CPC分类号： C07J31/006 , C07J41/0055 , C07J43/003 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/114
摘要： Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3−H+ (1a) R1—O—COOCH(CF3)CF2SO3−H+ (1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）或（1c）的磺酸。 R1-COOCH（CF3）CF2SO3-H +（1a）R1-O-COOCH（CF3）CF2SO3-H +（1c）R1是具有类固醇结构的C20-C50烃基。 光致酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增幅抗蚀剂组合物。
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9.发明授权Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US07556909B2
公开(公告)日：2009-07-07
申请号：US11588414
申请日：2006-10-27
CPC分类号： G03F7/0045 , C07C309/08 , C07C381/12 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.
摘要翻译： 磺酸盐具有式：CF 3 -CH（OH）-CF 2 SO 3 -M +，其中M +是Li，Na，K，铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基，所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好，包括涂层，预烘焙，曝光，曝光后烘烤和显影步骤。 在ArF浸没光刻期间，光致酸发生器几乎不受水晶体上剩余的水分的影响。
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10.发明授权Chemically-amplified positive resist composition and patterning process thereof 有权化学扩增的正型抗蚀剂组合物及其构图工艺公开(公告)号：US08202677B2
公开(公告)日：2012-06-19
申请号：US12457327
申请日：2009-06-08
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。
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