公开(公告)号：US5665168A

公开(公告)日：1997-09-09

申请号：US515007

申请日：1995-08-14

申请人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu

发明人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu

IPC分类号： B08B3/08 ,  C11D3/04 ,  C11D7/02 ,  C11D7/08 ,  C11D7/22 ,  H01L21/304 ,  H01L21/306 ,  B08B3/00

CPC分类号： H01L21/02052

摘要： A method for cleaning a semiconductor silicon wafer, which can suppress and reduce adhesion of particles to the surface of the wafer, is disclosed. The method includes the steps of cleaning the semiconductor silicon wafer by using hydrofluoric acid aqueous solution containing a surfactant, and thereafter rinsing the semiconductor silicon wafer by using pure water containing ozone.

摘要翻译： 公开了一种能够抑制和降低颗粒对晶片表面的粘附性的半导体硅晶片的清洗方法。 该方法包括通过使用含有表面活性剂的氢氟酸水溶液清洗半导体硅晶片的步骤，然后使用含有臭氧的纯水冲洗半导体硅晶片。

公开(公告)号：US5640238A

公开(公告)日：1997-06-17

申请号：US694318

申请日：1996-08-08

申请人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

发明人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

IPC分类号： G01N21/94 ,  G01N21/956 ,  H01L21/304 ,  H01L21/66 ,  G01N21/00

CPC分类号： H01L22/12

摘要： A method of inspecting particles on wafers is disclosed, wherein a first particle map is made by particle measurement on a wafer to be inspected, then a particle removing treatment is conducted to remove particles from the wafer, subsequently after a second particle map is made by particle measurement on the wafer which is subjected to the particle removing treatment, the first particle map is compared with the second particle map, and particles appearing at the immobile point common in both the first particle map and the second particle map are determined as crystal defects or surface irregularities such as scratches and particles appearing in the first particle map but those disappearing in the second particle map are determined as real dust particles or contaminants, thereby accurately detecting particles on wafers.

摘要翻译： 公开了一种在晶片上检查颗粒的方法，其中通过在要检查的晶片上进行颗粒测量来制备第一颗粒图，然后进行颗粒去除处理以从晶片去除颗粒，随后在第二颗粒图由 将进行了粒子去除处理的晶片上的粒子测定与第二粒子图进行比较，将第一粒子图和第二粒子图中共同的不动点的粒子确定为晶体缺陷 或表面凹凸，例如出现在第一粒子图中的划痕和颗粒，而在第二颗粒图中消失的那些被确定为真实的灰尘颗粒或污染物，从而精确地检测晶片上的颗粒。

公开(公告)号：US5662743A

公开(公告)日：1997-09-02

申请号：US439560

申请日：1995-05-11

申请人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

发明人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu ,  Morie Suzuki

IPC分类号： C11D7/08 ,  H01L21/304 ,  H01L21/306 ,  B08B3/04 ,  C23G1/02

CPC分类号： H01L21/02052

摘要： A novel HF cleaning method of silicon wafers is provided whereby the wafers are cleaned with a lowered level of particle contamination on the surface thereof. In the method silicon wafers are immersed in a HF bath, followed by immersion in a deionized water bath. The silicon wafers are lowered into and lifted out of each bath along a direction which is substantially vertical with respect to a surface of each bath at a rate of from 1 mm/sec to 50 mm/sec. During immersion, a vertical oscillation of the surface of each bath is maintained in the range of less than 4 mm.

摘要翻译： 提供一种硅晶片的新型HF清洗方法，由此在其表面上以较低的颗粒污染水平清洗晶片。 在该方法中，将硅晶片浸入HF浴中，然后浸入去离子水浴中。 硅晶片沿着相对于每个浴槽的表面基本上垂直的方向以1mm / sec至50mm / sec的速率下降到每个浴中并从每个浴中升出。 在浸入过程中，每个槽的表面的垂直振荡保持在小于4mm的范围内。

公开(公告)号：US5626681A

公开(公告)日：1997-05-06

申请号：US544464

申请日：1995-10-18

申请人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu

发明人： Masami Nakano ,  Isao Uchiyama ,  Hiroyuki Takamatsu

IPC分类号： B08B3/08 ,  C11D7/02 ,  C11D7/04 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/08

摘要： An improved semiconductor wafer cleaning method capable of cleaning wafers without degrading the surface roughness of the wafers includes the steps of cleaning a polished wafer with an aqueous solution of hydrofluoric acid, then rinsing the wafer with ozone-containing water, and thereafter brush-scrubbing the wafer.

摘要翻译： 能够在不降低晶片的表面粗糙度的情况下清洗晶片的改进的半导体晶片清洁方法包括以下步骤：用氢氟酸水溶液清洗抛光晶片，然后用含臭氧水冲洗晶片，然后刷洗 晶圆。

公开(公告)号：US5581837A

公开(公告)日：1996-12-10

申请号：US493070

申请日：1995-06-21

申请人： Isao Uchiyama ,  Masami Nakano ,  Hiroyuki Takamatu ,  Morie Suzuki

发明人： Isao Uchiyama ,  Masami Nakano ,  Hiroyuki Takamatu ,  Morie Suzuki

IPC分类号： B08B1/04 ,  B08B1/02 ,  B08B3/02 ,  H01L21/00 ,  H01L21/304 ,  A47L25/00 ,  A46B13/02

CPC分类号： H01L21/67028 ,  B08B1/02 ,  B08B3/022

摘要： A brush cleaning apparatus which includes at least one brush cleaning means having a pair of rotary brushes that are arranged in parallel one above the other. Disk-shaped objects are transported one at a time between the brushes so as to be cleaned thereby. A stopper is provided in front of the disk-shaped objects. The stopper selectively blocks movement of the disk-shaped objects and releases the disk-shaped objects for controlled movement of the disk-shaped objects through the cleaning apparatus.

摘要翻译： 一种刷子清洁装置，其包括至少一个刷清洁装置，该刷子清洁装置具有一对彼此并排布置的一对旋转刷。 盘形物体一次在刷子之间传送，从而被清洁。 在盘状物体的前方设置有止动件。 止动器选择性地阻止盘状物体的移动并释放盘状物体，以便通过清洁装置控制盘形物体的移动。

公开(公告)号：US06319845B1

公开(公告)日：2001-11-20

申请号：US09034151

申请日：1998-03-02

申请人： Isao Uchiyama ,  Hiroyuki Takamatsu ,  Toshio Ajito

发明人： Isao Uchiyama ,  Hiroyuki Takamatsu ,  Toshio Ajito

IPC分类号： H01L213063

CPC分类号： C01D1/28

摘要： A method of purifying an alkaline solution is capable of extremely efficiently nonionizing metallic impurity ions in an alkaline solution at a low cost. A method of etching semiconductor wafers in turn is capable of etching semiconductor wafers using the purified alkaline solution without deteriorating the quality of the semiconductor wafers. A reducing agent having an oxidation potential lower than a reversible electrode potential of metallic ions existing in the alkaline solution is dissolved in the alkaline solution to thereby nonionize the metallic ions existing in the alkaline solution.

摘要翻译： 纯碱性溶液的方法能够以低成本非常有效地在碱性溶液中除去金属杂质离子。 依次蚀刻半导体晶片的方法能够使用纯化的碱性溶液蚀刻半导体晶片，而不会劣化半导体晶片的质量。 具有低于存在于碱性溶液中的金属离子的可逆电极电位的氧化电位的还原剂溶解在碱性溶液中，从而使存在于碱性溶液中的金属离子非离子化。

公开(公告)号：US6110839A

公开(公告)日：2000-08-29

申请号：US703645

申请日：1996-08-27

申请人： Masami Nakano ,  Isao Uchiyama ,  Toshio Ajito ,  Hideo Kudo

发明人： Masami Nakano ,  Isao Uchiyama ,  Toshio Ajito ,  Hideo Kudo

IPC分类号： C01D1/28 ,  C30B29/06 ,  C30B33/10 ,  H01L21/308 ,  B44C1/22

CPC分类号： C01D1/28

摘要： A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.

摘要翻译： 纯化碱性溶液的方法包括在金属硅和/或硅化合物溶解时产生的反应产物将金属硅和/或硅化合物溶解在碱性溶液中，并在碱性溶液中溶解非电离金属离子。 该纯化方法能够通过简单的操作以低成本显着降低碱性溶液中的金属离子。 蚀刻半导体晶片的方法包括通过在碱性溶液中非离子化金属离子来纯化碱性溶液，并通过使用纯化的碱性溶液蚀刻半导体晶片。 根据该蚀刻方法，由于半导体晶片的蚀刻而导致的金属污染程度大大降低，晶片质量不会降低，也不会降低半导体器件的特性。

公开(公告)号：US5282289A

公开(公告)日：1994-02-01

申请号：US998076

申请日：1992-12-28

申请人： Fumihiko Hasegawa ,  Makoto Tsukada ,  Hideo Kudo ,  Masayuki Yamada ,  Isao Uchiyama

发明人： Fumihiko Hasegawa ,  Makoto Tsukada ,  Hideo Kudo ,  Masayuki Yamada ,  Isao Uchiyama

IPC分类号： H01L21/304 ,  B08B1/04 ,  H01L21/00 ,  B08B11/02

CPC分类号： H01L21/67028 ,  B08B1/04

摘要： A scrubber cleaner for cleaning the unsucked face and peripheral chamfers of a semiconductor wafer. A wafer holder capable of holding the wafer by vacuum suction and turning the wafer circumferentially, and including a wafer suction head for fixing the wafer on it and a motor to rotate the suction head. A brush assembly including a rotatory plate having a brushing surface on one side consisting of a flat ring portion and a side-of-cylinder portion, and being capable of shifting axially and in radial directions; a motor for rotating the rotatory plate circumferentially; an air cylinder for shifting the rotatory plate axially; and another air cylinder for shifting the rotatory plate in radial directions. The side-of-cylinder portion of the brushing surface axially extends from the inner boundary of the ring portion, and the rotatory plate is disposed such that the flat ring portion of the brushing surface of the brush is opposed to and in parallel to the unsucked face of the wafer which is held on the suction head.

摘要翻译： 洗涤器清洁器，用于清洁半导体晶片的未起落的表面和周边倒角。 一种晶片保持器，其能够通过真空吸附保持晶片，并且周向地转动晶片，并且包括用于将晶片固定在其上的晶片吸入头和用于旋转吸头的电动机。 一种刷组件，包括：旋转板，其一侧具有由平环部和侧筒部组成的一侧的刷表面，能够沿轴向和径向移动; 周向旋转旋转板的马达; 轴向移动旋转板的气缸; 以及用于沿径向方向移动旋转板的另一气缸。 刷子表面的圆筒部分从环部的内边缘轴向延伸，并且旋转板被设置成使得刷子的刷洗表面的平环部分与未塞的部件相对并平行 保持在吸头上的晶片的表面。

公开(公告)号：US5595412A

公开(公告)日：1997-01-21

申请号：US352654

申请日：1994-12-09

申请人： Hideo Kudo ,  Isao Uchiyama

发明人： Hideo Kudo ,  Isao Uchiyama

IPC分类号： B08B11/04 ,  B08B3/04 ,  B65G49/07 ,  H01L21/304 ,  H01L21/677 ,  H01L21/687 ,  B66C1/42

CPC分类号： H01L21/68707 ,  H01L21/67781 ,  Y10S294/907 ,  Y10S414/141

摘要： The present invention provides a device for handling wafers with every group of more than one that is built in a cassette-less automatic wafer cleaning apparatus, wherein the group of wafers are washed at a time which does not require very high accuracy in positioning the wafers and may accommodate the wafers of any different diameters, the device for handling wafers comprising: external hollow shafts and internal shafts inserted and freely slidable within the inside of the external hollow shafts; a drive mechanism, wherein each pair of the external hollow shafts and the internal shafts are movable in their respective opposed directions by the same distances with a timing belt and a drive motor for driving the timing belt; a pair of handling members respectively held fast at pairs of ends side by side of each pair of the external hollow shafts and the internal shafts; and a plurality of supporting structures holding the wafers provided on the respective opposed surfaces of handling members.

摘要翻译： 本发明提供了一种用于处理晶片的装置，其中每组不止一个内置在无盒式自动晶片清洁装置中，其中该组晶片在不需要非常高的精度定位晶片的时候被清洗 并且可以容纳任何不同直径的晶片，用于处理晶片的装置包括：外部中空轴和在外部空心轴内部插入和自由滑动的内轴; 驱动机构，其中每对外部空心轴和内部轴可以在其相对的相对方向上与同步带和用于驱动同步皮带的驱动马达相同距离移动; 一对处理构件分别在每对外部中空轴和内部轴的并列端部分别地保持; 以及多个支撑结构，其保持设置在处理构件的相对的相对表面上的晶片。

公开(公告)号：US20090305615A1

公开(公告)日：2009-12-10

申请号：US12308991

申请日：2007-06-05

申请人： Isao Uchiyama

发明人： Isao Uchiyama

IPC分类号： B24B1/00 ,  B24B41/06 ,  B24B7/17

CPC分类号： B24B37/28

摘要： The present invention provides a carrier for double-side polishing apparatus which is set between upper and lower turn tables having polishing pads attached thereto and has a holding hole in which a semiconductor wafer sandwiched between the upper and lower turn tables is held at the time of polishing in a double-side polishing apparatus, wherein a material of the carrier is titanium, and surface roughness of the titanium carrier is 0.14 μm or above in terms of Ra. As a result, there can be provided the carrier for double-side polishing apparatus, a double-side polishing apparatus, and a double-side polishing method that can stably and efficiently produce a high-quality wafer having reduced wafer peripheral sag and a high flatness at the time of double-side polishing of a semiconductor wafer.

摘要翻译： 本发明提供一种用于双面抛光装置的载体，其被设置在具有附接到其上的抛光垫的上下转台之间，并具有夹持在上下转台之间的半导体晶片的保持孔， 在双面研磨装置中进行研磨，其中载体的材料为钛，钛载体的表面粗糙度为Ra为0.14μm以上。 结果，可以提供可以稳定有效地制造具有减少的晶片周边凹陷和高的晶片的高质量晶片的双面抛光装置，双面抛光装置和双面抛光方法的载体 在半导体晶片的双面抛光时的平坦度。