公开(公告)号：US4685014A

公开(公告)日：1987-08-04

申请号：US403015

申请日：1982-07-29

申请人： Masanobu Hanazono ,  Shinichi Hara ,  Hirosi Akiyama ,  Masaaki Hayashi ,  Harunobu Saitoo ,  Takumi Kurisu

发明人： Masanobu Hanazono ,  Shinichi Hara ,  Hirosi Akiyama ,  Masaaki Hayashi ,  Harunobu Saitoo ,  Takumi Kurisu

IPC分类号： H01L21/31 ,  G11B5/31 ,  H01L21/302 ,  H01L21/3065 ,  G11B5/147

CPC分类号： G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49064

摘要： In producing a magnetic head by thin film technique, a magnetic film is formed on an insulating member covering coil conductor films after the surface of the insulating member is flattened. After a flattening coating is formed on the insulating member, the flattening coating as well as the insulating member are etched by plasma-assisted etching technique in order to flatten the surface.

摘要翻译： 在通过薄膜技术制造磁头时，在绝缘构件的表面变平后，在覆盖线圈导体膜的绝缘构件上形成磁性膜。 在绝缘构件上形成平坦化的涂层之后，通过等离子体辅助蚀刻技术对平坦化涂层以及绝缘构件进行蚀刻，以使表面变平。

公开(公告)号：US5621243A

公开(公告)日：1997-04-15

申请号：US363245

申请日：1994-12-23

申请人： Noboru Baba ,  Hisanori Okamura ,  Masahiko Sakamoto ,  Hirosi Akiyama ,  Ryuichi Saito ,  Yoshihiko Koike ,  Makoto Kitano ,  Sigeki Sekine ,  Hideya Kokubun ,  Nobuya Koike

发明人： Noboru Baba ,  Hisanori Okamura ,  Masahiko Sakamoto ,  Hirosi Akiyama ,  Ryuichi Saito ,  Yoshihiko Koike ,  Makoto Kitano ,  Sigeki Sekine ,  Hideya Kokubun ,  Nobuya Koike

IPC分类号： H01L23/373 ,  H01L25/07 ,  H01L23/34 ,  H05K7/20

CPC分类号： H01L23/3736 ,  H01L23/3735 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/3511

摘要： A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350.degree. C. or more. Further, in the semiconductor device fabricated by bonding the semiconductor elements via the thermal stress buffer, the heat dissipation plate and the insulation plate onto the metal support plate, the heat dissipation plate comprises a portion having a reduced thickness in the periphery thereof machined by counterboring or the like.

摘要翻译： 通过成功地抑制金属支撑板或金属散热板由于在接合期间的热应力引起的翘曲而提供具有延长的产品寿命的高可靠性电力控制半导体装置，以防止在 金属散热板或金属支撑板之间的接合层中的钎焊填料和包括半导体元件，金属散热板，热应力缓冲层，绝缘板和金属支撑板的半导体器件中的绝缘板，其中在 金属散热板和金属支撑板中的至少一个包括其热硬度变为+ E的软化温度，室温下的硬度的1/2 + EE的铜合金，为350℃ 。 或者更多。 此外，在将半导体元件经由热应力缓冲器，散热板和绝缘板接合到金属支撑板上而制造的半导体器件中，散热板包括通过对置加工而在其周边具有减小的厚度的部分 或类似物。

公开(公告)号：US4690793A

公开(公告)日：1987-09-01

申请号：US581076

申请日：1984-02-17

申请人： Hisanori Okamura ,  Kunio Miyazaki ,  Hirosi Akiyama ,  Shinichi Itoh ,  Tomio Yasuda ,  Kousuke Nakamura ,  Yukio Okoshi ,  Mutuo Kamoshita ,  Akio Chiba

发明人： Hisanori Okamura ,  Kunio Miyazaki ,  Hirosi Akiyama ,  Shinichi Itoh ,  Tomio Yasuda ,  Kousuke Nakamura ,  Yukio Okoshi ,  Mutuo Kamoshita ,  Akio Chiba

IPC分类号： G21B1/11 ,  G21B1/13 ,  G21B1/17 ,  G21B1/00 ,  B32B15/04 ,  B32B15/20

CPC分类号： G21B1/13 ,  B23K1/0008 ,  B23K1/19 ,  B23K1/20 ,  Y02E30/128 ,  Y10S228/903 ,  Y10S376/90 ,  Y10T428/12507 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/12764 ,  Y10T428/12903

摘要： The nuclear fusion reactor of the present invention presents a new vacuum vessel for enclosing plasma particles where a reactor wall exposed to the above plasma particles has a piled structure. A plurality of heat-resisting ceramic tiles are metallurgically bonded to a metal-base body having a cooling means through a brazing material. The ceramic tiles are preferably composed of sintered silicon carbide of high density and containing a little beryllium oxide between the boundaries of crystal grains.

摘要翻译： 本发明的核聚变反应器提供了用于封闭等离子体颗粒的新的真空容器，其中暴露于上述等离子体颗粒的反应器壁具有堆叠结构。 多个耐热陶瓷砖通过钎焊材料冶金地结合到具有冷却装置的金属基体上。 陶瓷砖优选由高密度的烧结碳化硅构成，并且在晶粒边界之间含有少量氧化铍。

公开(公告)号：US4636434A

公开(公告)日：1987-01-13

申请号：US679534

申请日：1984-12-07

申请人： Hisanori Okamura ,  Hirosi Akiyama ,  Mutuo Kamoshita ,  Kunio Miyazaki

发明人： Hisanori Okamura ,  Hirosi Akiyama ,  Mutuo Kamoshita ,  Kunio Miyazaki

IPC分类号： C04B37/00 ,  C04B37/02 ,  C04B41/50 ,  C04B41/85 ,  B32B9/00 ,  C09J1/00 ,  F02C1/00

CPC分类号： C04B37/008 ,  C04B37/005 ,  C04B37/006 ,  C04B37/023 ,  C04B37/025 ,  C04B37/026 ,  C04B41/009 ,  C04B41/5001 ,  C04B41/85 ,  C04B2235/6562 ,  C04B2235/963 ,  C04B2237/086 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/368 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/60 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/76 ,  C04B2237/78 ,  Y10T428/256 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31515 ,  Y10T428/31667 ,  Y10T428/31786 ,  Y10T428/31935

摘要： A carbon film is formed on a ceramic element, or a metal film is formed on the carbon film, and subsequently the ceramic element is bonded to another ceramic or metal element, thereby forming a composite article. The composite article has a high bonding strength and is hardly fractured at joint. Ceramic articles having a surface coating of a hard carbon film or a hard carbon film containing metal grains can also be formed by this process.

摘要翻译： 在陶瓷元件上形成碳膜，或者在碳膜上形成金属膜，然后将陶瓷元件接合到另一陶瓷或金属元件，从而形成复合制品。 该复合制品具有高的接合强度，并且在接合处几乎不断裂。 也可以通过该方法形成具有硬质碳膜或含有金属颗粒的硬质碳膜的表面被覆的陶瓷制品。