摘要:
An object of the invention is to provide a current collector for a non-aqueous secondary battery in which the strength of the current collector is sufficient in forming an electrode plate and an active material can be efficiently disposed on the protrusions of the current collector, and to provide an electrode plate for a non-aqueous secondary battery and a non-aqueous secondary battery using the same. The invention relates to a current collector for a non-aqueous secondary battery, including a metal foil for carrying at least a positive electrode active material or negative electrode active material. Protrusions are formed in a predetermined arrangement pattern on at least one face of the metal foil and at least tops of the protrusions are not compressed. The arrangement pattern includes: a row direction in which the protrusions are aligned linearly at an equal pitch; and a column direction in which row units comprising a group of the protrusions aligned in the row direction are aligned in parallel at a predetermined interval. The respective protrusions of any one of the row units are displaced in the row direction from the protrusions of another row unit that is adjacent in the column direction. The invention also pertains to an electrode plate for a non-aqueous secondary battery and a non-aqueous secondary battery using the same.
摘要:
An object of the invention is to provide a current collector for a non-aqueous secondary battery in which the strength of the current collector is sufficient in forming an electrode plate and an active material can be efficiently disposed on the protrusions of the current collector, and to provide an electrode plate for a non-aqueous secondary battery and a non-aqueous secondary battery using the same. The invention relates to a current collector for a non-aqueous secondary battery, including a metal foil for carrying at least a positive electrode active material or negative electrode active material. Protrusions are formed in a predetermined arrangement pattern on at least one face of the metal foil and at least tops of the protrusions are not compressed. The arrangement pattern includes: a row direction in which the protrusions are aligned linearly at an equal pitch; and a column direction in which row units comprising a group of the protrusions aligned in the row direction are aligned in parallel at a predetermined interval. The respective protrusions of any one of the row units are displaced in the row direction from the protrusions of another row unit that is adjacent in the column direction. The invention also pertains to an electrode plate for a non-aqueous secondary battery and a non-aqueous secondary battery using the same.
摘要:
The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film forming chamber 17 and the evaporation chamber 16 are evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure 34, the nonreactive gas is introduced to the evaporation chamber 16 to adjust the pressure in the evaporation chamber 16 to predetermined pressure or more. Thus, the evaporation of the film formation material is suppressed. In the same state as above, the nonreactive gas is introduced to the film forming chamber 17 to adjust the pressure in the film forming chamber 17 to the predetermined pressure or more. The conductance variable structure 34 is activated to cancel the above state. Then, the evaporation source 19 is moved by the moving mechanism 35, so that the opening surface 14 is located close to the substrate 21. The pressure in each chamber is decreased to less than the predetermined pressure. Thus, the suppression of the evaporation of the film formation material is canceled, and the film formation is started.
摘要:
A method for manufacturing an electrode for an electrochemical element capable of absorbing and releasing lithium ions includes a lithiation treatment method for compensating an irreversible capacity of the electrode for an electrochemical element. In the lithiation treatment method, lithium is provided to the electrode by allowing a lithium vapor to flow with a movement route of the lithium vapor limited.
摘要:
The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.
摘要:
The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film formation is performed in a state where the opening surface 14 of the evaporation source 19 holding the heated film formation material is located close to the substrate 21 while evacuating the evaporation chamber 16 and the film forming chamber 17 without shutting off communication between the evaporation chamber 16 and the film forming chamber 17 by the conductance variable structure 34. Next, the evaporation of the film formation material is suppressed by introducing a nonreactive gas to the evaporation chamber 16 and the film forming chamber 17 to adjust pressure in each chamber to predetermined pressure or more. Then, the evaporation source 19 is moved by the moving mechanism 35 such that the opening surface 14 is located away from the substrate 21. The conductance variable structure is activated to shut off the communication between these chambers, and the film formation material is cooled while continuously introducing the nonreactive gas to the evaporation chamber 16.
摘要:
In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要:
In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
摘要:
The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 51 of a thin film to prepare a melted liquid, solidifying the melted liquid 51a to form a rod-shaped body 51b, and pulling out the rod-shaped body 51b, (ii) melting and supplying a part of the rod-shaped body 51b to a melted liquid (evaporation source) 51d, and (iii) using the melted liquid (evaporation source) 51d to form the thin film. The steps (i), (ii), and (iii) are carried out in vacuum.
摘要:
A current collector includes a metal foil and protrusions formed on one face or both faces of the metal foil in a predetermined arrangement. The protrusions are substantially rhombic and aligned in a zigzag. Also, both end portions of each protrusion in each of two orthogonal axial directions protrude outward. Middle portions between the end portions are recessed inward. When columnar blocks of an active material are formed on the protrusions to form an active material layer, the gaps between the protrusions can be increased at portions where the interval between the protrusions is the smallest. As a result, internal stress of the active material layer created by charge/discharge of the battery can be alleviated, and the battery life can be increased.