摘要:
This power supply device includes a series circuit of a first switching element and a second switching element connected in parallel with a DC power supply unit, and a smoothing filter circuit which includes a series circuit of an inductor and a smoothing capacitor connected in parallel with the second switching element. The power supply device also includes a control unit and a drive circuit for generating first and second PWM pulses by respectively driving the first and second switching elements ON and OFF, and for creating a dead time between those switching pulse signals. And this control unit changes the frequency of the switching pulse signal according to the pulse width of either the first PWM pulses or the second PWM pulses.
摘要:
This power supply device includes a series circuit of a first switching element and a second switching element connected in parallel with a DC power supply unit, and a smoothing filter circuit which includes a series circuit of an inductor and a smoothing capacitor connected in parallel with the second switching element. The power supply device also includes a control unit and a drive circuit for generating first and second PWM pulses by respectively driving the first and second switching elements ON and OFF, and for creating a dead time between those switching pulse signals. And this control unit changes the frequency of the switching pulse signal according to the pulse width of either the first PWM pulses or the second PWM pulses.
摘要:
The hole drilling process is for drilling a hole on a supported tube sheet by using a first drilling tool that can drill a hole with a diameter smaller than that of a mounting hole that is to become a target hole, and a second drilling tool that can drill a hole with a diameter equal to the diameter of the target hole, the process including: a temporary hole drilling step in which a temporary hole with a predetermined depth set beforehand is drilled by moving the first drilling tool to a drilled position set beforehand; a hole measuring step in which a distance (S) between an existing mounting hole and the temporary hole; a drilled position correcting step in which the drilled position is corrected based upon the distance (S) between the mounting hole and the temporary hole.
摘要:
The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer ( 6 ) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9 ) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate ( 5). The thick, low-density p-layer ( 33 ) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion. The above constitution can bring about a solid-state image pickup device that can prevent the blooming phenomenon, causes less residual images, and can operate as an electronic shutter with ease.
摘要:
A nail care set of nail enamel remover and nail cream and a container kit having a main container body for keeping the nail enamel remover, an auxiliary cap container for keeping the nail cream, and a hollow lid to fit in the auxiliary cap container.
摘要:
A DC power supply apparatus includes a rectifier circuit for rectifying an input AC voltage to develop a rectified voltage between two output terminals thereof. First and second smoothing capacitors are connected in series between the output terminals of the rectifier circuit. First and second voltages developed across the first and second capacitors are applied to first and second inverters which convert the applied voltages to high-frequency voltages, which, in turn, are applied to a transformer. The transformer develops a transformed high-frequency voltage which is converted to a DC voltage by a converter. A voltage detector detects the first and second voltages, and the detected first and second voltages are compared in a microprocessor. An inverter control circuit controls the first and second inverters in accordance with the result of comparison, in a sense to make the voltages across the first and second smoothing capacitors equal.
摘要:
An arc welder includes an inverter for converting a DC voltage to a RF voltage which, then, is rectified by a rectifier. The output of the rectifier is smoothed by a DC reactor. A RF generator provides RF current to flow between a workpiece and a main electrode of the welder forming a welder load, which initiates arcing between the workpiece and the main electrode. Initiation of arcing causes output current from the DC reactor to be supplied to the welder load, so that steady-state arcing is established. The DC reactor has a relatively small inductance which permit the output current from the DC reactor to reach a value required for establishing the steady-state arcing within a time period during which the RF generator provides RF current. The RF voltage from the inverter has a relatively high frequency so that the output current from the DC reactor can sustain the steady-state arcing.
摘要:
A brazing clad material is a composite material that comprises a base material and a brazing material layer formed integrally on the base material. The brazing material layer has a Ni or Ni alloy layer, a Ti or Ti alloy layer and a Fe—Ni alloy layer that are sequentially stacked in this order on the base material. The brazing material layer has a Fe concentration of 25 to 40 wt % in the entire brazing material layer. The brazing material layer satisfies a ratio of W1/W2 to be 0.56 to 0.66, where W1 is a weight of Ni contained in the entire brazing material layer and W2 is a total weight of Ni and Ti contained in the entire brazing material layer.
摘要:
A brazing clad material is a composite material that comprises a base material and a brazing material layer formed integrally on the base material. The brazing material layer has a Ni or Ni alloy layer, a Ti or Ti alloy layer and a Fe—Ni alloy layer that are sequentially stacked in this order on the base material. The brazing material layer has a Fe concentration of 25 to 40 wt % in the entire brazing material layer. The brazing material layer satisfies a ratio of W1/W2 to be 0.56 to 0.66, where W1 is a weight of Ni contained in the entire brazing material layer and W2 is a total weight of Ni and Ti contained in the entire brazing material layer.