公开(公告)号：US08129758B2

公开(公告)日：2012-03-06

申请号：US12676212

申请日：2009-07-03

申请人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

发明人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

IPC分类号： H01L27/10

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.

摘要翻译： 半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。 在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。 沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。 并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

公开(公告)号：US08125005B2

公开(公告)日：2012-02-28

申请号：US12300352

申请日：2007-05-17

申请人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

发明人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

IPC分类号： H01L27/148

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.

摘要翻译： 半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。 半导体层10包括碳化硅。 半导体区域15s和导电表面19s中的至少一个不是圆形的。 半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分 穿过半导体区域15s的导电表面19s具有平滑变化的长度。

公开(公告)号：US20100295062A1

公开(公告)日：2010-11-25

申请号：US12676212

申请日：2009-07-03

申请人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

发明人： Masao Uchida ,  Masashi Hayashi ,  Koichi Hashimoto

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.

摘要翻译： 半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。 在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。 沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。 并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

公开(公告)号：US20090101918A1

公开(公告)日：2009-04-23

申请号：US12300352

申请日：2007-05-17

申请人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

发明人： Masao Uchida ,  Koichi Hashimoto ,  Masashi Hayashi

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.

摘要翻译： 半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。 半导体层10包括碳化硅。 半导体区域15s和导电表面19s中的至少一个不是圆形的。 半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分 穿过半导体区域15s的导电表面19s具有平滑变化的长度。

公开(公告)号：US08399962B2

公开(公告)日：2013-03-19

申请号：US13389708

申请日：2011-05-13

申请人： Masashi Hayashi ,  Masao Uchida ,  Kunimasa Takahashi

发明人： Masashi Hayashi ,  Masao Uchida ,  Kunimasa Takahashi

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L21/0475 ,  H01L27/0207 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7828 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/872

摘要： A semiconductor chip of the present invention is a semiconductor device that includes a hexagonal semiconductor layer having anisotropic mechanical properties. A semiconductor chip (21), when viewed from a direction perpendicular to the semiconductor chip (21), has a rectangular shape that has a first side (1A) and a second side (1B) orthogonal to the first side (1A). The amount of thermal deformation along a direction in which the first side (1A) extends and the amount of thermal deformation along a direction in which the second side (1B) extends are substantially equal to each other.

摘要翻译： 本发明的半导体芯片是具有各向异性机械特性的六方半导体层的半导体装置。 当从垂直于半导体芯片（21）的方向观察时，半导体芯片（21）具有与第一侧（1A）正交的第一侧（1A）和第二侧（1B）的矩形。 沿着第一侧（1A）延伸的方向的热变形量和沿着第二侧（1B）延伸的方向的热变形量基本相等。

公开(公告)号：US08237172B2

公开(公告)日：2012-08-07

申请号：US12676415

申请日：2008-10-24

申请人： Masao Uchida ,  Kazuya Utsunomiya ,  Masashi Hayashi

发明人： Masao Uchida ,  Kazuya Utsunomiya ,  Masashi Hayashi

IPC分类号： H01L31/0312 ,  H01L21/28

CPC分类号： H01L29/66068 ,  H01L21/0485 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/7828 ,  H01L29/872

摘要： A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.

摘要翻译： 根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。 背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

公开(公告)号：US08575729B2

公开(公告)日：2013-11-05

申请号：US13579432

申请日：2011-05-13

申请人： Masao Uchida ,  Masashi Hayashi

发明人： Masao Uchida ,  Masashi Hayashi

IPC分类号： H01L21/78 ,  H01L29/04

CPC分类号： H01L29/7827 ,  H01L27/0207 ,  H01L29/045 ,  H01L29/66068 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861

摘要： The semiconductor chip (18) of the present invention is a semiconductor chip (18) on which a power semiconductor device (10) is formed, and which includes a semiconductor substrate made from a hexagonal semiconductor, in which the semiconductor substrate has a shape of a rectangle on a principal surface, in which the rectangle is defined by two sides having lengths a and b equal to each other, and in which linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other.

摘要翻译： 本发明的半导体芯片（18）是形成功率半导体器件（10）的半导体芯片（18），其包括由六边形半导体制成的半导体衬底，其中半导体衬底具有 在主表面上的矩形，其中矩形由具有彼此相等的长度a和b的两边限定，并且其中平行于半导体衬底的两侧的方向上的线性膨胀系数彼此相等。

公开(公告)号：US20120319249A1

公开(公告)日：2012-12-20

申请号：US13579432

申请日：2011-05-13

申请人： Masao Uchida ,  Masashi Hayashi

发明人： Masao Uchida ,  Masashi Hayashi

IPC分类号： H01L29/04 ,  H01L21/78

CPC分类号： H01L29/7827 ,  H01L27/0207 ,  H01L29/045 ,  H01L29/66068 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861

摘要： The semiconductor chip (18) of the present invention is a semiconductor chip (18) on which a power semiconductor device (10) is formed, and which includes a semiconductor substrate made from a hexagonal semiconductor, in which the semiconductor substrate has a shape of a rectangle on a principal surface, in which the rectangle is defined by two sides having lengths a and b equal to each other, and in which linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other.

摘要翻译： 本发明的半导体芯片（18）是形成功率半导体器件（10）的半导体芯片（18），其包括由六边形半导体制成的半导体衬底，其中半导体衬底具有 在主表面上的矩形，其中矩形由具有彼此相等的长度a和b的两边限定，并且其中平行于半导体衬底的两侧的方向上的线性膨胀系数彼此相等。

公开(公告)号：US20100207125A1

公开(公告)日：2010-08-19

申请号：US12676415

申请日：2008-10-24

申请人： Masao Uchida ,  Kazuya Utsunomiya ,  Masashi Hayashi

发明人： Masao Uchida ,  Kazuya Utsunomiya ,  Masashi Hayashi

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L29/66068 ,  H01L21/0485 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/7828 ,  H01L29/872

摘要： A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.

摘要翻译： 根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。 背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

公开(公告)号：US20120138951A1

公开(公告)日：2012-06-07

申请号：US13389708

申请日：2011-05-13

申请人： Masashi Hayashi ,  Masao Uchida ,  Kunimasa Takahashi

发明人： Masashi Hayashi ,  Masao Uchida ,  Kunimasa Takahashi

IPC分类号： H01L29/06 ,  H01L29/20 ,  H01L21/78 ,  H01L29/24

CPC分类号： H01L29/7813 ,  H01L21/0475 ,  H01L27/0207 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7828 ,  H01L29/808 ,  H01L29/8613 ,  H01L29/872

摘要： A semiconductor chip of the present invention is a semiconductor device that includes a hexagonal semiconductor layer having anisotropic mechanical properties. A semiconductor chip (21), when viewed from a direction perpendicular to the semiconductor chip (21), has a rectangular shape that has a first side (1A) and a second side (1B) orthogonal to the first side (1A). The amount of thermal deformation along a direction in which the first side (1A) extends and the amount of thermal deformation along a direction in which the second side (1B) extends are substantially equal to each other.

摘要翻译： 本发明的半导体芯片是具有各向异性机械特性的六方半导体层的半导体装置。 当从垂直于半导体芯片（21）的方向观察时，半导体芯片（21）具有与第一侧（1A）正交的第一侧（1A）和第二侧（1B）的矩形形状。 沿着第一侧（1A）延伸的方向的热变形量和沿着第二侧（1B）延伸的方向的热变形量基本相等。