公开(公告)号：US5445710A

公开(公告)日：1995-08-29

申请号：US202372

申请日：1994-02-25

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31122 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

摘要翻译： 一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜， 含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板 图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

公开(公告)号：US5302240A

公开(公告)日：1994-04-12

申请号：US20193

申请日：1993-02-19

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano ,  Kazuhiro Tomioka ,  Yasuhiro Ito ,  Haruki Mori

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213 ,  H01L2/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31122 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

摘要翻译： 一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜， 含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板 图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

公开(公告)号：US5240554A

公开(公告)日：1993-08-31

申请号：US824095

申请日：1992-01-22

申请人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano

发明人： Masaru Hori ,  Hiroyuki Yano ,  Keiji Horioka ,  Hisataka Hayashi ,  Sadayuki Jimbo ,  Haruo Okano

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/945

摘要： A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在形成在基片上的靶膜上形成碳膜，在碳膜上形成有机膜图案，使用有机膜图案作为掩模蚀刻碳膜，形成碳 并对基板进行加热，将具有卤素原子的蚀刻气体供给到存储基板的反应区域，向反应区域施加电场以产生放电，并使用碳膜图案进行各向异性蚀刻氧化硅膜 作为掩模和通过放电形成的等离子体。

公开(公告)号：US5756402A

公开(公告)日：1998-05-26

申请号：US426693

申请日：1995-04-24

申请人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

发明人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical. A method for etching a silicon nitride film, includes the steps of exciting gas containing fluorine and oxygen gas, thereby generating a fluorine radical and an oxygen radical, supplying the fluorine radical and the oxygen radical close to a substrate having the silicon nitride film and supplying gas of a compound containing a hydroxyl close to the substrate, reacting the fluorine radical, the oxygen radical and the compound containing the hydroxyl, thereby generating a compound of the fluorine radical, the oxygen radical and a compound of fluorine and hydrogen, and selectively etching the silicon nitride film from the substrate with the compound of the fluorine radical, the oxygen radical and the compound of fluorine and hydrogen.

摘要翻译： 一种用于蚀刻氮化硅膜的方法包括以下步骤：在具有氮化硅膜的衬底附近提供氟基，氟和氢的化合物和氧自由基，并从衬底中选择性地蚀刻氮化硅膜， 氟自由基，氟和氢的化合物和氧自由基。 一种用于蚀刻氮化硅膜的方法包括以下步骤：激发含氟和氧气的气体，从而产生氟基和氧自由基，将氟自由基和氧自由基靠近具有氮化硅膜的基板并供应 含有靠近底物的羟基化合物的气体，使氟自由基，氧自由基和含有羟基的化合物反应，从而产生氟自由基，氧自由基和氟和氢的化合物的化合物，并选择性地蚀刻 来自衬底的氮化硅膜与氟自由基，氧自由基以及氟和氢的化合物组成。