公开(公告)号：US20150069551A1

公开(公告)日：2015-03-12

申请号：US14200742

申请日：2014-03-07

申请人： Masaru TOKO ,  Masahiko NAKAYAMA ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Tadashi KAI ,  Akiyuki MURAYAMA ,  Tatsuya KISHI

发明人： Masaru TOKO ,  Masahiko NAKAYAMA ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Tadashi KAI ,  Akiyuki MURAYAMA ,  Tatsuya KISHI

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.

摘要翻译： 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层。 参考层包括第一区域和设置在第一区域外部以包围该第一区域的第二区域。 第二区域包含包含在第一区域中的元素，而另一元素与元素不同。 磁阻元件还包括存储层，以及设置在参考层和存储层之间的隧道势垒层。 存储层没有另一个元素。

公开(公告)号：US20160104834A1

公开(公告)日：2016-04-14

申请号：US14629120

申请日：2015-02-23

申请人： Masaru TOKO ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA ,  Tadashi KAI

发明人： Masaru TOKO ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA ,  Tadashi KAI

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

摘要翻译： 根据一个实施例，磁阻存储器件的制造方法包括在衬底上形成第一磁性层，在第一磁性层上形成磁阻效应元件，在磁阻效应元件的一部分上形成掩模，选择性地蚀刻磁阻 使用该掩模，在通过蚀刻暴露的磁阻效应元件的侧壁上形成侧壁绝缘膜，使用掩模和侧壁绝缘膜选择性地蚀刻第一磁性层，并在侧壁上形成含有磁性材料的沉积层 的第一磁性层和侧壁绝缘膜，并将离子引入沉积层。

公开(公告)号：US20150325785A1

公开(公告)日：2015-11-12

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

发明人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US20150069557A1

公开(公告)日：2015-03-12

申请号：US14202802

申请日：2014-03-10

申请人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

发明人： Masahiko NAKAYAMA ,  Masatoshi YOSHIKAWA ,  Tadashi KAI ,  Yutaka HASHIMOTO ,  Masaru TOKO ,  Hiroaki YODA ,  Jae Geun OH ,  Keum Bum LEE ,  Choon Kun RYU ,  Hyung Suk LEE ,  Sook Joo KIM

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

摘要翻译： 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

公开(公告)号：US20140284735A1

公开(公告)日：2014-09-25

申请号：US14014210

申请日：2013-08-29

申请人： Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Tadashi KAI ,  Youngmin EEH ,  Koji UEDA ,  Yutaka HASHIMOTO ,  Daisuke WATANABE ,  Kazuya SAWADA

发明人： Masahiko NAKAYAMA ,  Toshihiko NAGASE ,  Tadashi KAI ,  Youngmin EEH ,  Koji UEDA ,  Yutaka HASHIMOTO ,  Daisuke WATANABE ,  Kazuya SAWADA

IPC分类号： H01L43/08

CPC分类号： H01L43/08 ,  H01F10/3254 ,  H01F10/3259 ,  H01F41/325

摘要： According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.

摘要翻译： 根据一个实施例，磁阻效应元件包括参考层，移位消除层，设置在参考层和移位消除层之间的存储层，设置在参考层和存储层之间的隧道势垒层，以及间隔物 设置在移位消除层和存储层之间的层，其中当从垂直于图案的方向观察存储层和移位消除层的图案时，存储层的图案设置在移位消除层的图案内部 的存储层和移位消除层。

公开(公告)号：US20150069552A1

公开(公告)日：2015-03-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka HASHIMOTO ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Toshihiko NAGASE ,  Masatoshi YOSHIKAWA ,  Yasuyuki SONODA

发明人： Yutaka HASHIMOTO ,  Tadashi KAI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Toshihiko NAGASE ,  Masatoshi YOSHIKAWA ,  Yasuyuki SONODA

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US20110227179A1

公开(公告)日：2011-09-22

申请号：US13050692

申请日：2011-03-17

申请人： Eiji KITAGAWA ,  Tadashi KAI ,  Tadaomi DAIBOU ,  Yutaka HASHIMOTO ,  Hiroaki YODA

发明人： Eiji KITAGAWA ,  Tadashi KAI ,  Tadaomi DAIBOU ,  Yutaka HASHIMOTO ,  Hiroaki YODA

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.

摘要翻译： 根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

公开(公告)号：US20130177357A1

公开(公告)日：2013-07-11

申请号：US13495168

申请日：2012-06-13

申请人： Yutaka HASHIMOTO ,  Osamu Inoue

发明人： Yutaka HASHIMOTO ,  Osamu Inoue

IPC分类号： E02D29/05

CPC分类号： E02D29/05

摘要： The embodiment of the present invention is a preliminary construction method of an in-plant trench of a nuclear power plant, the method. The method includes: constructing a plurality of buildings for generating an atomic energy; constructing a trench between the buildings via a platform configured to adjust a level of the trench with an installation level of the trench; and backfilling an area between a ground and the trench, after the construction of the trench.

摘要翻译： 本发明的实施例是一种核电站厂内沟槽的初步构造方法。 该方法包括：构造多个用于产生原子能的建筑物; 在建筑物之间经由构造成在所述沟槽的安装高度调整所述沟槽的水平面的平台构造沟槽; 并在沟渠建设之后回填地面和沟槽之间的区域。