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公开(公告)号：US20140284735A1
公开(公告)日：2014-09-25
申请号：US14014210
申请日：2013-08-29
申请人： Masahiko NAKAYAMA , Toshihiko NAGASE , Tadashi KAI , Youngmin EEH , Koji UEDA , Yutaka HASHIMOTO , Daisuke WATANABE , Kazuya SAWADA
发明人： Masahiko NAKAYAMA , Toshihiko NAGASE , Tadashi KAI , Youngmin EEH , Koji UEDA , Yutaka HASHIMOTO , Daisuke WATANABE , Kazuya SAWADA
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , H01F10/3254 , H01F10/3259 , H01F41/325
摘要： According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
摘要翻译： 根据一个实施例，磁阻效应元件包括参考层，移位消除层，设置在参考层和移位消除层之间的存储层，设置在参考层和存储层之间的隧道势垒层，以及间隔物 设置在移位消除层和存储层之间的层，其中当从垂直于图案的方向观察存储层和移位消除层的图案时，存储层的图案设置在移位消除层的图案内部 的存储层和移位消除层。
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公开(公告)号：US20140284742A1
公开(公告)日：2014-09-25
申请号：US13963762
申请日：2013-08-09
申请人： Kazuya SAWADA , Toshihiko NAGASE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Masahiko NAKAYAMA , Tadashi KAI , Hiroaki YODA
发明人： Kazuya SAWADA , Toshihiko NAGASE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Masahiko NAKAYAMA , Tadashi KAI , Hiroaki YODA
摘要： According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
摘要翻译： 根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。 第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。 第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率 高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。
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公开(公告)号：US20150069554A1
公开(公告)日：2015-03-12
申请号：US14201263
申请日：2014-03-07
申请人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
发明人： Masahiko NAKAYAMA , Yasuyuki SONODA , Hiroaki YODA , Makoto NAGAMINE , Masatoshi YOSHIKAWA , Masaru TOKO , Tadashi KAI , Daisuke WATANABE , Youngmin EEH , Koji UEDA , Kazuya SAWADA , Toshihiko NAGASE
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material.
摘要翻译： 根据一个实施例，公开了一种磁存储器。 存储器包括含有第一金属材料的导电层，形成在导电层之上的层叠体，并且包括形成在第一磁性层和第二磁性层之间的包含第二金属材料的第一磁性层，第二磁性层和隧道势垒层 第二磁性层和形成在层叠体的侧面上并且包含第一金属材料的氧化物的绝缘层。 第一金属材料的标准电极电位低于第二金属材料的标准电极电位。
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公开(公告)号：US20150263271A1
公开(公告)日：2015-09-17
申请号：US14478971
申请日：2014-09-05
申请人： Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE , Masahiko NAKAYAMA
发明人： Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE , Masahiko NAKAYAMA
CPC分类号： H01L43/10 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.
摘要翻译： 根据一个实施例，提供了一种磁阻元件，包括在基板上具有结晶性的下电极，在下电极上包括非晶状态的第一导电层，在第一导电层上的缓冲层，以及在第一导电层上的MTJ元件 缓冲层。
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5.发明申请公开(公告)号：US20150069552A1
公开(公告)日：2015-03-12
申请号：US14200894
申请日：2014-03-07
申请人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
发明人： Yutaka HASHIMOTO , Tadashi KAI , Masahiko NAKAYAMA , Hiroaki YODA , Toshihiko NAGASE , Masatoshi YOSHIKAWA , Yasuyuki SONODA
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。
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公开(公告)号：US20150061053A1
公开(公告)日：2015-03-05
申请号：US14203198
申请日：2014-03-10
申请人： Masahiko NAKAYAMA , Tadashi KAI , Masaru TOKO , Toshihiko NAGASE , Hiroaki YODA
发明人： Masahiko NAKAYAMA , Tadashi KAI , Masaru TOKO , Toshihiko NAGASE , Hiroaki YODA
CPC分类号： H01L43/10 , H01L27/222 , H01L27/228 , H01L27/2463 , H01L29/82 , H01L43/08 , H01L43/12 , H01L45/06
摘要： According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.
摘要翻译： 根据一个实施例，公开了一种磁阻元件。 元件包括第一磁性膜，第二磁性膜和形成在第一磁性膜和第二磁性膜之间的第一非磁性层。 第二磁性膜包括形成在第一非磁性层一侧的第一磁性层，形成在与第一非磁性层相反的一侧的第二磁性层和形成在第一磁性层和第二磁性层之间的第二非磁性层 并含有TiN。
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公开(公告)号：US20080131732A1
公开(公告)日：2008-06-05
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。
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公开(公告)号：US20090224342A1
公开(公告)日：2009-09-10
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译： 磁阻效应元件包括参考层，记录层和非磁性层。 参考层由磁性材料制成，具有垂直于膜表面的不变磁化。 记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。 非磁性层布置在参考层和记录层之间。 临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是 在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。
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公开(公告)号：US20150325785A1
公开(公告)日：2015-11-12
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
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公开(公告)号：US20150069557A1
公开(公告)日：2015-03-12
申请号：US14202802
申请日：2014-03-10
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
摘要翻译： 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。
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