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    Gas sensor for vehicle engine having a double-pipe cover
    1.
    发明授权
    Gas sensor for vehicle engine having a double-pipe cover 有权
    具有双管盖的车用发动机气体传感器

    公开(公告)号：US06279376B1

    公开(公告)日：2001-08-28

    申请号：US09405837

    申请日：1999-09-27

    申请人： Masaru Yamada ,  Kengo Toguchi ,  Hidetaka Hayashi ,  Satoshi Nakamura ,  Hiroo Imamura ,  Daisuke Makino

    发明人： Masaru Yamada ,  Kengo Toguchi ,  Hidetaka Hayashi ,  Satoshi Nakamura ,  Hiroo Imamura ,  Daisuke Makino

    IPC分类号： G01N27407

    CPC分类号： G01N27/4077

    摘要： A gas sensor has a housing, a gas sensing element held by the housing and having a gas contact portion and an element cover for covering the gas contact portion. The element cover has a double pipe structure formed by layering an outer pipe and an inner pipe. The outer pipe has an outer bottom portion having an outer bottom hole and an outer side portion having plural outer side holes. The inner pipe has an inner bottom portion having an inner bottom hole and an inner side portion having plural inner side holes disposed not to overlap the outer side holes. A spacing D of 0.2-1.0 mm is formed between the outer bottom portion and the inner bottom portion. As a result, flow resistance in the spacing D is relatively high, and the sample gas sufficiently and more smoothly flows toward the gas sensing element. Therefore, the element cover prevents condensed water from entering the inside of the gas sensor and improves response of the gas sensor.

    摘要翻译： 气体传感器具有壳体，由壳体保持的气体感测元件，并具有气体接触部分和用于覆盖气体接触部分的元件盖。 元件盖具有通过分层外管和内管形成的双管结构。 外管具有外底部的外底部和具有多个外侧孔的外侧部。 内管具有内底部底部和内侧部分，内侧部分具有多个设置成不与外侧孔重叠的内侧孔。 在外底部和内底部之间形成间距D为0.2-1.0mm。 结果，间隔D中的流动阻力相对较高，并且样品气体充分且更平稳地流向气体感测元件。 因此，元件盖防止冷凝水进入气体传感器的内部并改善气体传感器的响应。

    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US08084826B2

    公开(公告)日：2011-12-27

    申请号：US12364797

    申请日：2009-02-03

    申请人： Kenshi Kanegae ,  Masaru Yamada

    发明人： Kenshi Kanegae ,  Masaru Yamada

    IPC分类号： H01L21/66 ,  H01L21/76

    CPC分类号： H01L21/823807 ,  H01L21/823412 ,  H01L21/823425 ,  H01L29/7843

    摘要： An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact liner, oxygen or the like is ion-implanted. Thereafter, heat treatment is performed to cause shrinkage of the contact liner in the N-channel region to form an n-channel contact liner, and to cause expansion of the contact liner in the P-channel region to form a p-channel contact liner.

    摘要翻译： 将大于硅的元素离子注入N沟道区域中的接触衬垫，以破坏N沟道区中的接触衬垫的构成原子。 大于硅的元素被离子注入到P沟道区域中的接触衬垫上以破坏接触衬垫的构成原子，离子注入氧等。 然后，进行热处理，使N沟道区域的接触衬垫收缩，形成n沟道接触衬垫，使P沟道区域内的接触衬垫膨胀，形成p沟道接触衬垫 。

    Manufacturing method of semiconductor device
    3.
    发明授权
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07696099B2

    公开(公告)日：2010-04-13

    申请号：US11600068

    申请日：2006-11-16

    申请人： Masaru Yamada ,  Akihiko Tsudumitani

    发明人： Masaru Yamada ,  Akihiko Tsudumitani

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76232

    摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

    摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面， 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。

    SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY
    4.
    发明申请
    SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 审中-公开
    具有改进的操作性能的半导体器件

    公开(公告)号：US20110001193A1

    公开(公告)日：2011-01-06

    申请号：US12882643

    申请日：2010-09-15

    申请人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    发明人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    IPC分类号： H01L27/092

    CPC分类号： H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/7842 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

    摘要翻译： 半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。 在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。 由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

    SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY
    5.
    发明申请
    SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 有权
    具有改进的操作性能的半导体器件

    公开(公告)号：US20090200582A1

    公开(公告)日：2009-08-13

    申请号：US12405668

    申请日：2009-03-17

    申请人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    发明人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    IPC分类号： H01L29/40

    CPC分类号： H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/7842 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

    摘要翻译： 半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。 在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。 由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

    Manufacturing method of semiconductor device
    6.
    发明申请
    Manufacturing method of semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US20070196965A1

    公开(公告)日：2007-08-23

    申请号：US11600068

    申请日：2006-11-16

    申请人： Masaru Yamada ,  Akihiko Tsudumitani

    发明人： Masaru Yamada ,  Akihiko Tsudumitani

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/76232

    摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.

    摘要翻译： 依次在半导体衬底上形成第一膜和第二膜。 在第二膜上形成抗蚀剂图案。 通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。 在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。 去除暴露在开口中的第一个薄膜。 在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面， 形成在半导体衬底的突出部分。 在开口中暴露的半导体衬底被进一步去除。

    Method of manufacturing cellulose/gelatin composite viscose rayon filament
    8.
    发明授权
    Method of manufacturing cellulose/gelatin composite viscose rayon filament 有权
    制造纤维素/明胶复合粘胶人造纤维丝的方法

    公开(公告)号：US08293157B2

    公开(公告)日：2012-10-23

    申请号：US11989392

    申请日：2006-05-10

    申请人： Masaru Yamada ,  Kunihiro Ohshima

    发明人： Masaru Yamada ,  Kunihiro Ohshima

    IPC分类号： D01F2/08

    CPC分类号： D01F2/08 ,  D01F4/00

    摘要： A method of manufacturing a cellulose/gelatin composite viscose rayon filament that is characterized by including a process in which a spinning process is carried out while a viscose spinning solution is mixed with a gelatin crosslinking solution, which makes it possible to produce a cellulose/gelatin composite viscose rayon having uniform strength and elongation without yarn disconnection.

    摘要翻译： 纤维素/明胶复合粘胶人造纤维丝的制造方法，其特征在于包括在粘胶纺丝溶液与明胶交联溶液混合的同时进行纺丝工序的方法，这使得可以生产纤维素/明胶 复合粘胶人造丝具有均匀的强度和伸长率，不脱纱。

    Semiconductor device with an improved operating property
    9.
    发明授权
    Semiconductor device with an improved operating property 有权
    具有改进的操作性能的半导体器件

    公开(公告)号：US07821138B2

    公开(公告)日：2010-10-26

    申请号：US12405668

    申请日：2009-03-17

    申请人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    发明人： Masaru Yamada ,  Masafumi Tsutsui ,  Kiyoyuki Morita

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/7842 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.

    摘要翻译： 半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。 在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。 由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。