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    Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
    1.
    发明授权
    Magnetic memory element, magnetic memory and manufacturing method of magnetic memory 有权
    磁存储元件，磁存储器和磁存储器的制造方法

    公开(公告)号：US06396735B2

    公开(公告)日：2002-05-28

    申请号：US09814560

    申请日：2001-03-22

    申请人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    发明人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    IPC分类号： G11C1115

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08

    摘要： In a magnetic memory of the present invention which includes a magnetic memory element composed of at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer stacked, a third ferromagnetic layer is provided via at least one conductor layer, on one side of the second ferromagnetic layer the other side being closer to the non-magnetic layer. The magnetic memory elements can thereby be provided via a smaller interval in-between, thereby realizing a magnetic memory having higher density than a conventional magnetic memory. Further, the first conductor layer for supplying a current to provide magnetization information can be disposed in the vicinity of the second ferromagnetic layer as a storage layer, thereby providing a magnetic memory capable of generating magnetic poles sufficient to reverse magnetization even by a small current, and low power consumption.

    摘要翻译： 在包括由至少第一铁磁层，非磁性层和第二铁磁层组成的磁存储元件的本发明的磁存储器中，第三铁磁层经由至少一个导体层提供，一个 所述第二铁磁层的另一侧更靠近所述非磁性层。 因此，可以通过较小的间隔来提供磁存储元件，从而实现比常规磁存储器更高密度的磁存储器。 此外，用于提供电流以提供磁化信息的第一导体层可以设置在作为存储层的第二铁磁层附近，从而提供能够产生足以使小磁化反转磁化的磁极的磁存储器， 和低功耗。

    Magnetic tunnel junction element and magnetic memory using the same
    3.
    发明授权
    Magnetic tunnel junction element and magnetic memory using the same 有权
    磁隧道结元件和磁记忆体使用相同

    公开(公告)号：US06442064B1

    公开(公告)日：2002-08-27

    申请号：US09785635

    申请日：2001-02-17

    申请人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    发明人： Masashi Michijima ,  Hidekazu Hayashi ,  Ryoji Minakata

    IPC分类号： G11C1114

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/123 ,  H01L43/08

    摘要： A magnetic tunnel junction element includes a first magnetic layer and a second magnetic layer acting as a memory layer, and a first insulating layer sandwiched between the first and second magnetic layers. Further, the magnetic tunnel junction element includes a third magnetic layer on a side of the second magnetic layer opposite from the first insulating layer. This third magnetic layer constitutes a closed magnetic circuit together with the second magnetic layer.

    摘要翻译： 磁性隧道结元件包括作为存储层的第一磁性层和第二磁性层以及夹在第一和第二磁性层之间的第一绝缘层。 此外，磁性隧道结元件包括在与第一绝缘层相反的第二磁性层侧的第三磁性层。 该第三磁性层与第二磁性层一起构成闭合磁路。

    Magnetoresistance effect type thin film magnetic head using high coercion films
    6.
    发明授权
    Magnetoresistance effect type thin film magnetic head using high coercion films 失效
    使用高强度膜的磁阻效应型薄膜磁头

    公开(公告)号：US5402292A

    公开(公告)日：1995-03-28

    申请号：US951985

    申请日：1992-09-25

    申请人： Tomohisa Komoda ,  Ryoji Minakata ,  Tohru Kira ,  Akiyoshi Fujii ,  Hiroshi Suzuki ,  Atsuo Mukai

    发明人： Tomohisa Komoda ,  Ryoji Minakata ,  Tohru Kira ,  Akiyoshi Fujii ,  Hiroshi Suzuki ,  Atsuo Mukai

    IPC分类号： G11B5/39 ,  G11B5/187 ,  G11B5/31

    CPC分类号： G11B5/3925 ,  G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistance effect type thin film magnetic head includes a MR element having the electrical resistance changed according to a change in an applied signal magnetic field, a lead electrode for detecting a voltage change generated across the ends of the MR element in which a change in electrical resistance is generated, and high coercive force films for applying a weak magnetic field to the MR element. The high coercive force films are arranged in the proximity of the ends of the MR element and at a predetermined position between the ends. According to this structure, a weak magnetic field is applied in uniform over the entire MR element to facilitate unification of magnetic domain of the MR element even in the case of a long MR element. Therefore, unification of magnetic domain can easily be carried out over the entire region of the MR element without increasing the film thickness of the high coercive force film even in a case of a wide track width, resulting in a thin film magnetic head with no Barkhausen noise generation.

    摘要翻译： 磁阻效应型薄膜磁头包括具有根据施加的信号磁场的变化而改变的电阻的MR元件，用于检测在MR元件的两端产生的电压变化的引线电极，其中电变化 产生电阻，以及用于向MR元件施加弱磁场的高矫顽力膜。 高矫顽力膜布置在MR元件的端部附近并且在端部之间的预定位置处。 根据该结构，在整个MR元件上施加均匀的弱磁场，以便即使在长MR元件的情况下也能使MR元件的磁畴的统一化。 因此，即使在宽磁道宽度的情况下，也可以在MR元件的整个区域上容易地进行磁畴的统一，而不会增加高矫顽力膜的膜厚，导致没有Barkhausen的薄膜磁头 噪音发生。

    Process for preparing soft magnetic film of Permalloy
    7.
    发明授权
    Process for preparing soft magnetic film of Permalloy 失效
    制备坡莫合金软磁膜的工艺

    公开(公告)号：US4699702A

    公开(公告)日：1987-10-13

    申请号：US906459

    申请日：1986-09-12

    申请人： Ryoji Minakata ,  Toru Kira ,  Mitsuhiko Yoshikawa

    发明人： Ryoji Minakata ,  Toru Kira ,  Mitsuhiko Yoshikawa

    IPC分类号： C23C14/35 ,  H01F41/18 ,  C23C14/00

    CPC分类号： C23C14/355 ,  H01F41/18

    摘要： A process for preparing a soft magnetic film of Permalloy on a rugged substrate in an inert gas atmosphere by a multielectrode sputtering method wherein the target voltage and the target current are independently controllable, the Permalloy film being prepared by:(a) setting the inert gas pressure and the target voltage at values below the critical values where the coercive force of the Permalloy film abruptly increases when the film is formed on a flat substrate, and(b) applying to the rugged substrate during film formation a negative bias voltage not lower than a specific value determined by an angle of inclination formed by a stepped portion in the rugged substrate.

    摘要翻译： 一种通过多电极溅射法在惰性气体环境中制备坡莫合金软磁膜的方法，其中目标电压和目标电流是独立可控的，该坡莫合金膜通过以下步骤制备：（a）将惰性气体 压力和目标电压值低于在平坦基板上形成薄膜时，坡莫合金薄膜的矫顽力突然增加的临界值，（b）在成膜期间向坚固的基板施加不低于 由凹凸基板中的阶梯部分形成的倾斜角确定的具体值。

    Transparent Electrode and Liquid Crystal Display Device Provided With the Same
    8.
    发明申请
    Transparent Electrode and Liquid Crystal Display Device Provided With the Same 审中-公开
    透明电极及其配备的液晶显示装置

    公开(公告)号：US20090002621A1

    公开(公告)日：2009-01-01

    申请号：US11664983

    申请日：2005-10-03

    申请人： Ryoji Minakata

    发明人： Ryoji Minakata

    IPC分类号： G02F1/1343

    CPC分类号： G02B5/3058 ,  G02F1/133528 ,  G02F1/134309 ,  G02F2203/01

    摘要： A transparent electrode (4) is made of an electrically conductive material and has a plurality of linear portions (22) extending substantially parallel to each other, and at least a part of the linear portions (22) are electrically connected to each other. Preferably, the linear portions (22) are formed with a pitch therebetween of at most a wavelength of visible radiation, and the linear portions (22) are formed each with a width of at most one half of the pitch.

    摘要翻译： 透明电极（4）由导电材料制成，并且具有彼此大致平行延伸的多个直线部分（22），至少一部分直线部分（22）彼此电连接。 优选地，直线部分（22）之间具有至少一个可见光辐射波长的间距，并且线形部分（22）形成为具有至多一半间距的宽度。