公开(公告)号：US06221323B1

公开(公告)日：2001-04-24

申请号：US09027486

申请日：1998-02-20

申请人： Masashi Mizuno ,  Masuo Tada ,  Norio Yamazaki ,  Takaaki Fukumoto

发明人： Masashi Mizuno ,  Masuo Tada ,  Norio Yamazaki ,  Takaaki Fukumoto

IPC分类号： B01D5300

CPC分类号： F24F3/16 ,  F24F2003/1621

摘要： Super clean air having therein chemical components—such as hydrocarbons, organic halogens, acidic gases, basic gases, aldehydes, nitrogen oxides, and H2O (that is, all components other than oxygen, nitrogen, and noble gases—the types of chemical components differ depending on the source of the air)—in concentrations no more than 1 ppb and a dew point lower than −40° C., is obtained from the atmosphere by low-temperature adsorption treatment in stages at temperatures ranging from −40° C. to −180° C. Material air collected from the atmosphere is pretreated in a room-temperature adsorption step to remove moisture and carbon dioxide. The pretreated air is then low-temperature adsorption treated by absorbents in a plurality of steps to adsorb the gaseous chemical components, the treatment temperature being lower in each succeeding step. Treatment at −40° C. may remove, for example, HF, SO2, and/or NH3. Treatment at −100° C. may remove, for example, SF6, C2F6, H2S, and/or N2O. Treatment at −150° C. may remove, for example, CF4, NO, CH4, and/or CO. The last treatment step produces super clean air suitable for use in processing semiconductor wafers.

摘要翻译： 其中具有化学成分的超净空气，如碳氢化合物，有机卤素，酸性气体，碱性气体，醛类，氮氧化物和H2O（即除氧气，氮气和稀有气体之外的所有组分） - 化学成分的类型不同 取决于空气源） - 浓度不超过1ppb，露点低于-40℃，通过在-40℃的温度下分级进行低温吸附处理从大气中获得。 至-180℃。从大气中收集的物料空气在室温吸附步骤中预处理以除去水分和二氧化碳。 然后将经预处理的空气以多个步骤对吸收剂进行低温吸附处理，以吸附气态化学成分，后续处理温度较低。 在-40℃下的处理可以除去例如HF，SO 2和/或NH 3。 在-100℃下的处理可以除去例如SF 6，C 2 F 6，H 2 S和/或N 2 O。 在-150℃下的处理可以除去例如CF 4，NO，CH 4和/或CO。最后的处理步骤产生适合用于处理半导体晶片的超净空气。

公开(公告)号：US5025597A

公开(公告)日：1991-06-25

申请号：US470226

申请日：1990-01-25

申请人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

发明人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

IPC分类号： B08B7/00 ,  B24C1/00 ,  B24C3/32 ,  F25C1/00 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B24C1/003 ,  B24C3/322 ,  F25C1/00 ,  H01L21/3221 ,  Y10S438/906

摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

公开(公告)号：US4974375A

公开(公告)日：1990-12-04

申请号：US434982

申请日：1989-11-09

申请人： Masuo Tada ,  Takaaki Fukumoto ,  Toshiaki Ohmori

发明人： Masuo Tada ,  Takaaki Fukumoto ,  Toshiaki Ohmori

IPC分类号： B08B7/02 ,  B24C1/00 ,  B24C3/22 ,  F25C1/00 ,  H01L21/00 ,  H01L21/304

CPC分类号： H01L21/67028 ,  B24C1/003 ,  B24C3/22 ,  F25C1/00

摘要： A solid surface cleaning device utilizes a jet of ice particles of ultrapure water for removing contaminants from a surface of a solid such as a semiconductor wafer. The electrical resistivity of ultrapure water stored in a tank is reduced by means of a gas such as dry air or carbon dioxide evolving into the water from a bubble tube disposed in the tank. The water whose resistivity is thus reduced is sprayed from a nozzle into an ice-making container which is refrigerated by the vaporization of a refrigerant discharged into the container. The fine ice particles that are thus generated in the container are sprayed and blasted from a jet spray nozzle onto the surface of the cleaned solid supported within a jet spray chamber. The air inside the chamber is exhausted by a blower together with the ice particles that have been ejected from the jet spray nozzle.

摘要翻译： 固体表面清洁装置利用超纯水的冰颗粒射流来从诸如半导体晶片的固体的表面去除污染物。 存储在罐中的超纯水的电阻率通过从设置在罐中的气泡管放入水中的气体例如干燥空气或二氧化碳减少。 电阻率如此降低的水从喷嘴喷射到制冷容器中，该制冰容器通过排放到容器中的制冷剂的蒸发而冷藏。 在容器中产生的细冰颗粒从喷射喷嘴喷射喷射到支撑在喷射喷雾室内的清洁固体的表面上。 室内的空气与从喷射喷嘴喷射的冰颗粒一起被鼓风机排出。

公开(公告)号：US5129198A

公开(公告)日：1992-07-14

申请号：US643289

申请日：1991-01-22

申请人： Itaru Kanno ,  Nobuyoshi Hattori ,  Takaaki Fukumoto ,  Masuo Tada

发明人： Itaru Kanno ,  Nobuyoshi Hattori ,  Takaaki Fukumoto ,  Masuo Tada

IPC分类号： B08B7/00 ,  B24C3/32 ,  B24C9/00 ,  H01L21/00 ,  H01L21/304

CPC分类号： H01L21/67028 ,  B24C3/322 ,  B24C9/00

摘要： A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.

摘要翻译： 用于半导体晶片的清洁装置包括清洁容器，冷冻颗粒供应单元，用于将冷冻颗粒朝着支撑在清洁容器内的半导体晶片喷射的喷嘴，连接到清洁容器的排气管和排气鼓风机。 第一和第二排气分别引导排气管冷冻颗粒和污染物从清洁容器内的晶片附近和容器壁附近。 第一排气包括第一排气引导管，其第一排气引导管的上端和下端分别敞开到清洁容器的靠近晶片和排气管的内部。 第二排气可以包括围绕第一排气导管的锥形排气引导管或围绕第一排气导管周向均匀设置的多个排气导管。

公开(公告)号：US4932168A

公开(公告)日：1990-06-12

申请号：US177784

申请日：1988-04-05

申请人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

发明人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

IPC分类号： B08B7/00 ,  B24C1/00 ,  B24C3/32 ,  F25C1/00 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B24C1/003 ,  B24C3/322 ,  F25C1/00 ,  H01L21/3221 ,  Y10S438/906

摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

摘要翻译： 用于半导体晶片的清洁方法和吸气方法包括在半导体晶片的表面喷砂冻结颗粒。 用于半导体晶片的处理装置包括用于形成超细冷冻颗粒的装置和用于在半导体晶片的表面喷砂冻结颗粒以进行半导体晶片的吸气或清洁的装置。 在本发明的一种形式中，冷冻颗粒是通过将一滴水喷入部分充满液氮的室中形成的，该室将液体冻结形成冰粒。 在本发明的另一形式中，冷冻颗粒是通过将水雾喷入含有冷氮气的室中而形成的，该冷室将冻结雾形成冰粒。 在本发明的另一形式中，冷冻颗粒是通过加热水以形成水蒸汽形成的，并将水蒸汽引入冷冻室，该冷冻室含有将蒸气冻结成超细颗粒的冷却剂的两相混合物。 冷冻颗粒通过诸如氮气的气体通过喷射喷嘴在半导体晶片上喷砂。 当冷冻颗粒用于吸气时，它们可以进一步包括研磨颗粒如二氧化硅粉末。

公开(公告)号：US5114748A

公开(公告)日：1992-05-19

申请号：US647478

申请日：1990-11-29

申请人： Masuo Tada ,  Hiroi Takahiko ,  Takaaki Fukumoto ,  Toshiaki Ohmori ,  Itaru Kanno

发明人： Masuo Tada ,  Hiroi Takahiko ,  Takaaki Fukumoto ,  Toshiaki Ohmori ,  Itaru Kanno

IPC分类号： G02F1/1337

CPC分类号： G02F1/13378 ,  Y10T428/1086

摘要： A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.

摘要翻译： 通过喷嘴喷射液体以形成基本均匀尺寸的微小液滴的方法。 将这些均匀的液滴喷入冷冻介质如液氮并冷冻，以形成均匀直径的冷冻颗粒。 将冷冻的颗粒喷射到用于液晶显示装置的基板的表面上以使施加到表面上的液晶材料定向。

公开(公告)号：US5035750A

公开(公告)日：1991-07-30

申请号：US470372

申请日：1990-01-25

申请人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

发明人： Masuo Tada ,  Takeki Hata ,  Takaaki Fukumoto ,  Toshiaki Ohmori

IPC分类号： B08B7/00 ,  B24C1/00 ,  B24C3/32 ,  F25C1/00 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B24C1/003 ,  B24C3/322 ,  F25C1/00 ,  H01L21/3221 ,  Y10S438/906

摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include nuclei of particles such as silica powder.

公开(公告)号：US4869090A

公开(公告)日：1989-09-26

申请号：US266705

申请日：1988-11-03

申请人： Masuo Tada ,  Kazuhiko Akamatsu ,  Takaaki Fukumoto ,  Toshiaki Ohmori ,  Tadashi Hyono

发明人： Masuo Tada ,  Kazuhiko Akamatsu ,  Takaaki Fukumoto ,  Toshiaki Ohmori ,  Tadashi Hyono

IPC分类号： F25C1/00 ,  G11B5/73 ,  G11B5/84

CPC分类号： G11B5/84 ,  F25C1/00

摘要： A method for forming a fine unevenness over a surface of a base plate (9) for a magnetic disc comprises the step of bombarding the surface of the base plate (9) with a jet of gas mixed with fine ice particles (4) that are formed by mixing a flow of fine pure water droplets from a spray (2) and a counter directed flow of nitrogen gas cooled by being bubbled through a quantity of liquid nitrogen held in a reservoir (6). The obtained unevenness can be controlled by varying the size of the ice particles, the jet pressure, the distance between the jet nozzle providing the size of the ice particle jet and the receiving surface of base plate (9), the duration of spraying and the spraying angle with respect to the base plate.

摘要翻译： 在用于磁盘的基板（9）的表面上形成微细凹凸的方法包括用与微细冰颗粒（4）混合的气体射流轰击基板（9）的表面的步骤， 通过混合来自喷雾（2）的细的纯水滴流和通过鼓泡通过保持在储存器（6）中的一定量的液氮而冷却的逆向氮气流。 可以通过改变冰颗粒的尺寸，喷射压力，提供冰颗粒射流的尺寸的喷嘴与基板（9）的接收表面之间的距离，喷涂的持续时间和 相对于基板喷射角度。

公开(公告)号：US5935314A

公开(公告)日：1999-08-10

申请号：US919344

申请日：1997-08-28

申请人： Noriaki Higuchi ,  Takaaki Fukumoto ,  Toshio Shiobara ,  Eiichi Asano ,  Kazutoshi Tomiyoshi

发明人： Noriaki Higuchi ,  Takaaki Fukumoto ,  Toshio Shiobara ,  Eiichi Asano ,  Kazutoshi Tomiyoshi

IPC分类号： C08K3/00 ,  C08K7/16 ,  C08K7/18 ,  C08L63/00 ,  C09C1/30 ,  C09C3/04 ,  H01L23/29 ,  H01L23/31 ,  C04B14/00

CPC分类号： H01L23/295 ,  C08K7/18 ,  C09C1/3009 ,  C09C3/04 ,  C01P2004/32 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/22 ,  C01P2006/80 ,  H01L2924/0002 ,  Y10T428/12528

摘要： By removing a fraction of fine particles having a particle size of less than 2 .mu.m from starting inorganic filler particles having a mean particle size of 10-50 .mu.m and adding thereto particles having a mean particle size of 0.1-2 .mu.m and a specific surface area of 3-10 m.sup.2 /g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 .mu.m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

摘要翻译： 通过从平均粒径为10-50μm的起始无机填料颗粒中除去一小部分粒径小于2μm的细颗粒，并加入平均粒度为0.1-2μm的颗粒和 比表面积为3-10m2 / g（BET），得到平均粒径为5-40μm的颗粒状无机填料。 当大量的无机填料装载在环氧树脂组合物中时，该组合物保持足够低的熔体粘度以成型，并且对于封装半导体器件而言不会引起芯片焊盘的变形和焊丝变形。 封装的半导体器件是高度可靠的。

公开(公告)号：US5336356A

公开(公告)日：1994-08-09

申请号：US914326

申请日：1992-07-17

申请人： Cozy Ban ,  Toshiaki Ohmori ,  Takaaki Fukumoto

发明人： Cozy Ban ,  Toshiaki Ohmori ,  Takaaki Fukumoto

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/02049

摘要： In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.

摘要翻译： 在用于处理半导体衬底的表面的设备中，将氟化氢溶解在非水溶剂中，使无水氟化氢离子化，并使溶液蒸发。 将溶液的蒸气引入到反应室中的半导体表面上以处理该表面。 可以对半导体衬底进行诸如清洁和蚀刻的处理，而不会在表面上产生反应产物。