摘要:
By removing a fraction of fine particles having a particle size of less than 2 .mu.m from starting inorganic filler particles having a mean particle size of 10-50 .mu.m and adding thereto particles having a mean particle size of 0.1-2 .mu.m and a specific surface area of 3-10 m.sup.2 /g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 .mu.m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.
摘要:
In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt % of a particulate inorganic filler, fine particles having a particle size of less than 3 .mu.m account for 10-40 wt % of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m.sup.2 /g as measured by a nitrogen adsorption BET method. The inorganic filler satisfies that when a blend of a bisphenol F type liquid epoxy resin having a viscosity of 30-45 poises at 25.degree. C. as measured by Gardner-Holdt method with 75 wt % of the inorganic filler is measured for viscosity at 25.degree. C. by means of an E type viscometer, the viscosity at a shear rate of 0.6 s.sub.-1 is less than 50,000 poises and the ratio of the viscosity at a shear rate of 0.6 s.sup.-1 to the viscosity at a share rate of 10 s.sup.-1 is less than 2.5/1. The epoxy resin composition has a low melt viscosity enough to mold on semiconductor devices without die pad and wire deformation.
摘要:
By removing a fraction of fine particles having a particle size of less than 2 &mgr;m from starting inorganic filler particles having a mean particle size of 10-50 mm and adding thereto particles having a mean particle size of 0.1-2 &mgr;m and a specific surface area of 3-10 m2/g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 &mgr;m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.
摘要:
In an epoxy resin composition comprising an epoxy resin, a curing agent, and at least 70% by weight of an inorganic filler, at least one of the epoxy resin and the curing agent has such a molecular weight distribution as to provide an average dispersity Mw/Mn of less than 1.6, a two-nucleus compound content of less than 8% by weight and a seven- and more-nucleus compound content of less than 32% by weight. When the composition is cured at 180.degree. C. for 90 seconds into a primary product having Tg1 and the primary product postcured at 180.degree. C. for 5 hours into a secondary product having Tg2, the relationship: (Tg2-Tg1)/Tg2
摘要:
A resin encapsulating molding die for manufacturing a semiconductor device includes a cavity piece having a cavity on which a lead frame with a mounted semiconductor element may be placed, with the semiconductor element in the cavity, and a gate piece having a gate portion including a sub-runner through which a molten resin for encapsulating the semiconductor element is introduced into the cavity, the gate piece being detachable from the cavity piece. The molding die also includes a sealing dam disposed adjacent the sub-runner for blocking flow of molten resin from the sub-runner toward leads of the lead frame. The sealing dam may be a clamp structure for clamping the leads closest to the gate portion, the sealing dam and cavity piece may be a continuous unitary structure, and the sealing dam may have a parting surface substantially coplanar with a parting surface of the cavity piece.
摘要:
A semiconductor device includes a molded resin encapsulating a semiconductor chip, outer leads extending from the molded resin and having free ends, and a resin layer connecting and supporting the outer leads along the entire length of the outer leads. The resin layer may have an activating ability for soldering. A method for manufacturing a semiconductor device includes preparing a semiconductor device having a molded resin and a plurality of outer lead portions extending from the molded resin and connected to a lead frame, forming a resin film on and between the outer lead portions; cutting the lead portions to provide cantilevered outer leads having free ends; lead-forming the outer leads with lead-forming dies while heating the resin film to form a resin layer connecting and supporting the outer leads along the entire lengths of the outer leads, and taking the semiconductor device out of the lead-forming dies after the resin layer has been cured.
摘要:
An injection molding device and a method for manufacturing a foil decorated molding use a first half of a mold and a second half of a mold with a transfer foil having a transfer layer on a substrate film transported into a space between the first half of the mold and the second half of the mold. A heating and removing device has a heating device and a molding removal device moved into the space to hold, with the removal device, a molding attached temporarily to the first half of the mold, and to heat the foil at the side of the second half of the mold with the heating device. When the first and second halves of the mold are closed, the heating and removing device is moved outside the space to remove the molding from the removal device.