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1.发明授权公开(公告)号：US08178389B2
公开(公告)日：2012-05-15
申请号：US12708124
申请日：2010-02-18
IPC分类号： H01L21/00
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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2.发明授权公开(公告)号：US08795624B2
公开(公告)日：2014-08-05
申请号：US11663887
申请日：2005-10-05
IPC分类号： C01B31/36 , H01L21/00 , B01J3/04 , H01B1/04 , H01B1/00 , H01L29/16 , H01L21/02 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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3.发明申请公开(公告)号：US20070262322A1
公开(公告)日：2007-11-15
申请号：US11663887
申请日：2005-10-05
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度为50倍 或小于掺杂剂元素的最小浓度。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 -3Ω以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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4.发明授权公开(公告)号：US08491719B2
公开(公告)日：2013-07-23
申请号：US12455243
申请日：2009-05-29
IPC分类号： C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过加工和研磨碳化硅单晶而获得的碳化硅单晶晶片，室温下的电阻率为5×10 3Ωm·m以上， 生产碳化硅单晶的方法。
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5.发明申请公开(公告)号：US20110180765A1
公开(公告)日：2011-07-28
申请号：US13040783
申请日：2011-03-04
IPC分类号： H01B1/04
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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公开(公告)号：US07799305B2
公开(公告)日：2010-09-21
申请号：US11629377
申请日：2005-06-15
IPC分类号： C30B29/36
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译： 本发明提供一种半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，半绝缘性碳化硅单晶的特征在于，在室温下具有电阻率 1×10 5Ω·cm·cm以上以及空位对（bivacancies）和半绝缘性碳化硅单晶，其特征在于，室温下的电阻率为1×10 5Ω·cm以上，并且含有晶体区域， 平均寿命在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的寿命长于155ps。 根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶 甚至可以获得热处理。
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7.发明申请公开(公告)号：US20090255458A1
公开(公告)日：2009-10-15
申请号：US12455243
申请日：2009-05-29
IPC分类号： C30B23/00
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×10 15 / cm 3的未补偿杂质的碳化硅单晶 以上，并且含有少于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ωcm以上的碳化硅单晶晶片，以及制造方法 碳化硅单晶。
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公开(公告)号：US20080038531A1
公开(公告)日：2008-02-14
申请号：US11629377
申请日：2005-06-15
IPC分类号： C04B35/52
摘要： The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom. According to the present invention, by having vacancy clusters including vacancy pairs, the electrical conductivity can be reduced even when the nitrogen concentration is higher than the boron concentration and, in addition, a semi-insulating SiC single crystal resistant to change of the electrical conductivity even with heat treatment can be obtained.
摘要翻译： 本发明提供一种半绝缘碳化硅单晶，其特征在于在室温下具有1×10 5Ω或更大的电阻率，以及半绝缘碳化硅单晶，其特征在于具有电阻率 在室温下为1×10 5Ωm以上，空位对（双峰）和半绝缘碳化硅单晶，其特征在于室温下的电阻率为1×10 5 / >以上，并且在液氮沸点温度（77K）以下的位置寿命的测定以及从其获得的晶片的含有位置平均寿命长于155ps的寿命的晶体区域。 根据本发明，通过具有包括空位对的空位簇，即使当氮浓度高于硼浓度时也可以降低电导率，另外还可以降低电导率的变化的半绝缘SiC单晶 甚至可以获得热处理。
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9.发明授权公开(公告)号：US08673254B2
公开(公告)日：2014-03-18
申请号：US13040783
申请日：2011-03-04
IPC分类号： C30B29/36
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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10.发明授权公开(公告)号：US07794842B2
公开(公告)日：2010-09-14
申请号：US10589680
申请日：2004-12-27
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ω·cm以上的碳化硅单晶晶片， 以及碳化硅单晶的制造方法。
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