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公开(公告)号：US09915011B2
公开(公告)日：2018-03-13
申请号：US12592747
申请日：2009-12-01
CPC分类号： C30B29/36 , C30B23/00 , C30B25/02 , C30B29/403 , C30B33/02 , Y10T428/24355
摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
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2.发明授权公开(公告)号：US08795624B2
公开(公告)日：2014-08-05
申请号：US11663887
申请日：2005-10-05
IPC分类号： C01B31/36 , H01L21/00 , B01J3/04 , H01B1/04 , H01B1/00 , H01L29/16 , H01L21/02 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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公开(公告)号：US20110206929A1
公开(公告)日：2011-08-25
申请号：US12998357
申请日：2009-10-14
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B25/00 , Y10T428/2918
摘要： The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm−3 to 6×1020 cm−3.
摘要翻译： 本发明提供单晶碳化硅和质量好的单晶碳化硅晶片，其位错，微管和其他晶体缺陷低，并且当应用于器件时可实现高产率和高性能，其中掺杂比 籽晶与生长晶体之间的界面的晶体生长方向的相反侧的元素浓度为5以下，晶种附近的生长晶体的掺杂元素浓度为2×10 19 cm -3〜 6×1020厘米-3。
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4.发明申请公开(公告)号：US20070262322A1
公开(公告)日：2007-11-15
申请号：US11663887
申请日：2005-10-05
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度为50倍 或小于掺杂剂元素的最小浓度。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 -3Ω以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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5.发明授权公开(公告)号：US08673254B2
公开(公告)日：2014-03-18
申请号：US13040783
申请日：2011-03-04
IPC分类号： C30B29/36
CPC分类号： H01B1/04 , C30B13/00 , C30B21/04 , C30B23/00 , C30B28/08 , C30B29/36 , H01B1/00 , H01L21/02378 , H01L21/02529 , H01L29/1608 , Y10S438/931
摘要： Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.
摘要翻译： 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。
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6.发明申请Epitaxial silicon carbide monocrystalline substrate and method of production of same 审中-公开外延碳化硅单晶基板及其生产方法相同公开(公告)号：US20110278596A1
公开(公告)日：2011-11-17
申请号：US13138270
申请日：2010-01-29
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
CPC分类号： H01L21/02609 , C23C16/325 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02634
摘要： The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
摘要翻译： 本发明提供一种外延SiC单晶衬底，其具有使用具有6°或更小的偏离角的衬底在外延生长中抑制发生步骤聚集的高质量外延膜的外延SiC单晶衬底及其制造方法，即外延 该外延碳化硅单晶衬底由形成有碳化硅单晶薄膜的偏离角为6°以下的碳化硅单晶衬底构成，其特征在于，所述碳化硅单晶薄膜的表面具有 0.5nm以下的表面粗糙度（Ra值）及其制造方法。
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7.发明授权Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom 有权单晶碳化硅锭，以及从其获得的基板和外延晶片公开(公告)号：US07972704B2
公开(公告)日：2011-07-05
申请号：US12735405
申请日：2009-01-14
IPC分类号： B32B9/04
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm−3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译： 本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。 是含有浓度为2×1018 cm -3〜6×1020cm-3的供体型杂质和1×1018浓度的受主型杂质的单晶碳化硅单晶碳化硅锭 cm-3〜5.99×1020cm-3，其中施主型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3， 从其获得的基板和外延晶片。
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8.发明授权公开(公告)号：US07794842B2
公开(公告)日：2010-09-14
申请号：US10589680
申请日：2004-12-27
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有原子序数密度为1×1015的未补偿杂质的碳化硅单晶 / cm3以上，并且含有小于所述未补偿杂质浓度的钒，通过在室温下加工和研磨碳化硅单晶而获得的电阻率为5×10 3Ω·cm以上的碳化硅单晶晶片， 以及碳化硅单晶的制造方法。
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9.发明申请公开(公告)号：US20080220232A1
公开(公告)日：2008-09-11
申请号：US10589680
申请日：2004-12-27
摘要： The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 Ωcm or more, and a method of production of a silicon carbide single crystal.
摘要翻译： 本发明提供一种高电阻率，高质量，大尺寸的SiC单晶，SiC单晶晶片及其制造方法，即含有1×10
15Ω/ cm 3以上，并且含有小于所述未补偿杂质浓度的量的钒，通过对碳化硅单晶进行加工和抛光而获得的具有电 室温下的电阻率为5×10 -3Ω以上，以及碳化硅单晶的制造方法。 -
公开(公告)号：US06953538B2
公开(公告)日：2005-10-11
申请号：US10296516
申请日：2001-06-04
CPC分类号： B82Y30/00 , C04B35/19 , C04B2235/3203 , C04B2235/3472 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3886 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/5436 , C04B2235/5454 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： An electroconductive low thermal expansion ceramic sintered body is disclosed which containing a β-eucryptite phase in a quantity of not less than 75 vol. % and not more than 99 vol. % and having an absolute value of thermal expansion coefficient of not more than 1.0×10−7/K at a temperature of 0° C. to 50° C., a volumetric specific resistance of not more than 1.0×107 Ω·cm, and a specific rigidity of not less than 40 GPa/g/cm3.
摘要翻译： 公开了一种导电性低热膨胀陶瓷烧结体，其含有不小于75体积％的β-堇青石相。 ％且不超过99体积 ％，并且在0℃至50℃的温度下具有不大于1.0×10 -7 / K的热膨胀系数的绝对值，体积电阻率不大于1.0 x 10±0.7cm 3，比刚度不小于40GPa / g / cm 3。
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