公开(公告)号：US20130113561A1

公开(公告)日：2013-05-09

申请号：US13810388

申请日：2010-10-21

申请人： Kenichi Horiguchi ,  Naoko Matsunaga ,  Hiroshi Otsuka ,  Masatoshi Nakayama ,  Kazuhiro Iyomasa ,  Akira Inoue

发明人： Kenichi Horiguchi ,  Naoko Matsunaga ,  Hiroshi Otsuka ,  Masatoshi Nakayama ,  Kazuhiro Iyomasa ,  Akira Inoue

IPC分类号： H03F3/04

CPC分类号： H03F3/04 ,  H03F1/0277 ,  H03F3/19 ,  H03F3/245 ,  H03F3/60 ,  H03F3/72 ,  H03F2203/7239

摘要： An output mode switching amplifier, including: a transistor for signal amplification connected between a first node on an input side and a second node on an output side; a bypass path for bypassing the transistor between the first node and the second node; a voltage control circuit for switching whether to apply a bias voltage to the transistor so that a transmission signal is amplified by the transistor or to output a transmission signal via the bypass path without amplifying the transmission signal by the transistor; and a second-harmonic reflection circuit connected to the bypass path, for reflecting a second harmonic of the transmission signal.

摘要翻译： 一种输出模式切换放大器，包括：用于信号放大的晶体管，连接在输入侧的第一节点和输出侧的第二节点之间; 用于绕过第一节点和第二节点之间的晶体管的旁路路径; 电压控制电路，用于切换是否向晶体管施加偏置电压，使得透射信号被晶体管放大或经由旁路路径输出发送信号，而不会由晶体管放大发送信号; 以及连接到所述旁路路径的二次谐波反射电路，用于反射所述发送信号的二次谐波。

公开(公告)号：US20110012681A1

公开(公告)日：2011-01-20

申请号：US12933509

申请日：2008-03-25

申请人： Kazuhisa Yamauchi ,  Hifumi Noto ,  Akira Inoue ,  Tomokazu Hamada ,  Masatoshi Nakayama ,  Kenichi Horiguchi

发明人： Kazuhisa Yamauchi ,  Hifumi Noto ,  Akira Inoue ,  Tomokazu Hamada ,  Masatoshi Nakayama ,  Kenichi Horiguchi

IPC分类号： H03F3/68

CPC分类号： H03F3/195 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/601 ,  H03F2200/387 ,  H03F2200/451

摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.

摘要翻译： 提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。 低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个 晶体管的栅极端子和漏极端子，并且包括多条分支线，多条分支线路的前端与高频短路元件短路，低频短路 元件。

公开(公告)号：US20090206926A1

公开(公告)日：2009-08-20

申请号：US11921504

申请日：2006-07-31

申请人： Kenichi Horiguchi ,  Satoru Ishizaka ,  Kazuhisa Yamauchi ,  Masatoshi Nakayama

发明人： Kenichi Horiguchi ,  Satoru Ishizaka ,  Kazuhisa Yamauchi ,  Masatoshi Nakayama

IPC分类号： H03F3/68

CPC分类号： H03F1/0288

摘要： When an input signal level is small, the electrical length of a phase line 21 and the electrical length of a phase line 23 are set in such a manner that the impedance seen by looking into the output side from an impedance reference point 11 at the output side of a carrier amplifier 3 becomes 2R+α (where R is a load resistance and α is positive), and the electrical length of a phase line 22 is set at a difference between the electrical length of the phase line 21 and the electrical length of the phase line 23.

摘要翻译： 当输入信号电平小时，相线21的电长度和相线23的电长度被设定为使得通过在输出处从阻抗参考点11观察输出侧看到的阻抗 载波放大器3的一侧变为2R +α（其中R是负载电阻，α为正），相线22的电长度被设定为相线21的电长度与电长度 的相线23。

公开(公告)号：US07557654B2

公开(公告)日：2009-07-07

申请号：US11660136

申请日：2004-10-28

申请人： Hifumi Noto ,  Kazuhisa Yamauchi ,  Yoshihiro Hamamatsu ,  Tomokazu Hamada ,  Masatoshi Nakayama

发明人： Hifumi Noto ,  Kazuhisa Yamauchi ,  Yoshihiro Hamamatsu ,  Tomokazu Hamada ,  Masatoshi Nakayama

IPC分类号： H03F1/26 ,  H03F1/30

CPC分类号： H03F1/3276 ,  H03F1/3223 ,  H03F2200/468

摘要： A linearizer changes a gain characteristic to a valley characteristic in which a gain reduces and then increases. The linearizer includes: a signal path in which an RF signal input terminal an input side bias blocking capacitor, a diode pair, including diodes having opposite polarities to each other, an output side bias blocking capacitor and an RF signal output terminal in series in the stated order; a bias circuit in which a resistor is provided between and a signal path formed between the input side bias blocking capacitor and the diode pair and a bias terminal; an RF short-circuiting capacitor whose one end is connected with the bias circuit between the bias terminal and the resistor and whose other end is grounded; and a DC feed inductor whose one end is connected with the signal path between the diode pair and the output side bias blocking capacitor and whose other end is grounded.

摘要翻译： 线性化器将增益特性改变为增益减小然后增加的谷特性。 线性化装置包括：信号路径，其中RF信号输入端子，输入侧偏置阻塞电容器，二极管对，包括彼此具有相反极性的二极管，输出侧偏置阻塞电容器和RF信号输出端子串联连接 命令; 在其间设置有电阻器和在输入侧偏置阻断电容器和二极管对之间形成的信号路径和偏置端子之间的偏置电路; RF短路电容器，其一端与偏置端子和电阻器之间的偏置电路连接，另一端接地; 以及直流馈电电感，其一端与二极管对和输出侧偏压电容之间的信号路径连接，另一端接地。

公开(公告)号：US06995948B2

公开(公告)日：2006-02-07

申请号：US10617560

申请日：2003-07-11

申请人： Masatoshi Nakayama

发明人： Masatoshi Nakayama

IPC分类号： G11B5/255

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23C16/26 ,  C23C16/30 ,  G11B5/102 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49021

摘要： A magnetoresistive thin-film magnetic head with high corrosion resistance for recording medium having massive capacity is provided by providing a protective film having a thickness of 40 Å or less. Since the distance between the head and the medium is remarkably reduced, the film is suitable for a recording medium having high-packing density. The magnetoresistive type thin-film magnetic head is provided, wherein the following layers are formed on at least the surface of the head facing a recording medium: (A) a lower layer composed of a thin film having the composition represented by the formula selected from the group consisting of: formula (i): SiCXHYOZNWFTBUPV (where X=0.5–26, Y=0.5–13, Z=0–6, W=0–6, T=0–6, U=0–1 and V=0–1, in terms of atomic ratio), and formula (ii): SiHYOZNWFTBUPV (where Y=0.0001–0.7, Z=0–6, W=0–6, T=0–6, U=0–1 and V=0–1); and (B) an upper layer composed of a diamond-like thin film having the composition represented by the following formula: CHaObNcFdBePf (where a=0–0.7, b=0–1, c=0–1, d=0–1, e=0–1 and f=0–1), and the total thickness of the lower layer and the upper layer is 40 Å or less. Also provided are a method for producing the same, and a magnetic head device using the same.

摘要翻译： 通过提供厚度为40埃以下的保护膜，提供具有大容量记录介质的具有高耐腐蚀性的磁阻薄膜磁头。 由于头和介质之间的距离显着降低，所以该膜适用于具有高堆积密度的记录介质。 提供了磁阻型薄膜磁头，其中在面向记录介质的头部的至少表面上形成以下层：（A）由具有由下式表示的组成的薄膜组成的下层： 该组组成

公开(公告)号：US06566945B2

公开(公告)日：2003-05-20

申请号：US10030102

申请日：2002-01-17

申请人： Masatoshi Nakayama ,  Kenichi Horiguchi ,  Yuji Sakai ,  Yukio Ikeda ,  Kazuyuki Totani ,  Satoshi Kunugi ,  Haruyasu Senda

发明人： Masatoshi Nakayama ,  Kenichi Horiguchi ,  Yuji Sakai ,  Yukio Ikeda ,  Kazuyuki Totani ,  Satoshi Kunugi ,  Haruyasu Senda

IPC分类号： H03F366

CPC分类号： H03F1/3235 ,  H03F2201/3212 ,  H03F2201/3218

摘要： A feedforward amplifier combines an input signal combined by a first error rejection loop with an error component and a first pilot signal detected by a second error detection loop, thereby canceling out the error component and the first pilot signal residual in the input signal.

公开(公告)号：US06471832B1

公开(公告)日：2002-10-29

申请号：US08641855

申请日：1996-05-02

申请人： Masatoshi Nakayama ,  Masahiro Nakano ,  Tsukimi Endo

发明人： Masatoshi Nakayama ,  Masahiro Nakano ,  Tsukimi Endo

IPC分类号： C23C1434

CPC分类号： B41J2/345

摘要： A method of producing a wear-resistant protective film for a thermal head comprises depositing a wear-resistant protective film by sputtering on a thermal head which includes a substrate, and a heat-developing layer and a pair of electrodes formed on either the substrate or a heat-regenerative layer formed thereon. A layer of the wear resistant protective film is formed under a RF larger bias and another layer without a bias or with a smaller bias. Good step coverage is obtained by the RF sputter layer of the wear-resistant and the protective film prevents the intrusion of water that can cause cracking, and the layer formed under no or smaller bias reduces internal stresses and inhibits the development of cracks due to internal stresses as well as the cracking by RF sputtering.

摘要翻译： 制造用于热敏头的耐磨保护膜的方法包括通过溅射将耐磨保护膜沉积在包括基底的热敏头上，以及形成在基底上的热显影层和一对电极 形成在其上的热再生层。 在RF较大的偏压下形成耐磨保护膜层，而在没有偏压或较小偏压的情况下形成另一层。 耐磨层的RF溅射层获得良好的阶梯覆盖，保护膜防止可能引起裂纹的水侵入，而在没有或较小偏置的条件下形成的层会降低内部应力，并抑制内部产生裂缝的发展 应力以及RF溅射的裂纹。

公开(公告)号：US06456160B1

公开(公告)日：2002-09-24

申请号：US09840181

申请日：2001-04-24

申请人： Masatoshi Nakayama ,  Kenichi Horiguchi ,  Yuji Sakai ,  Yukio Ikeda ,  Junichi Nagano ,  Haruyasu Senda

发明人： Masatoshi Nakayama ,  Kenichi Horiguchi ,  Yuji Sakai ,  Yukio Ikeda ,  Junichi Nagano ,  Haruyasu Senda

IPC分类号： H03F366

CPC分类号： H03F1/3229

摘要： A feedforward amplifier combines an input signal delayed by a delay circuit with an output signal by a combiner; down-converts the output of the combiner to a low frequency by a frequency converter; extracts a distortion component from the output of the frequency converter; measures the distortion component by a power detector; and controls a second vector regulator of a distortion canceling loop by a controller such that the distortion component measured becomes minimum.

摘要翻译： 前馈放大器将由延迟电路延迟的输入信号与组合器的输出信号进行组合; 通过变频器将组合器的输出下变频为低频; 从变频器的输出中提取失真分量; 通过功率检测器测量失真分量; 并且通过控制器控制失真消除环路的第二矢量调节器，使得测量的失真分量变得最小。

公开(公告)号：US6133791A

公开(公告)日：2000-10-17

申请号：US177651

申请日：1998-10-23

申请人： Kenichi Horiguchi ,  Masatoshi Nakayama ,  Yukio Ikeda ,  Tadashi Takagi ,  Haruyasu Senda

发明人： Kenichi Horiguchi ,  Masatoshi Nakayama ,  Yukio Ikeda ,  Tadashi Takagi ,  Haruyasu Senda

IPC分类号： H03F1/32 ,  H03F1/00

CPC分类号： H03F1/3229

摘要： A feedforward amplifier which includes a distortion detector, a distortion eliminator, an error power extractor, a first level detector and a first controller. The error power extractor extracts output error power due to variations in the distortion eliminator by combining the output signal from the distortion eliminator with the signal from a first linear signal path in the distortion detector in opposite phases. The first level detector detects the output error power extracted by the error power extractor, and the first controller controls a first variable attenuator and a first phase shifter which are interposed in the distortion eliminator such that the output error power is maintained at zero. This can solve a problem of a conventional feedforward amplifier in that the power level of the pilot signal must be increased to heighten the detection sensitivity of the pilot signal because the detection level of the pilot signal becomes minimum at an optimum operation point, and that the increasing power of the pilot signal degrades the communication quality of a system employing the conventional feedforward amplifier.

摘要翻译： 一种前馈放大器，包括失真检测器，失真消除器，误差功率提取器，第一电平检测器和第一控制器。 误差功率提取器通过将来自失真消除器的输出信号与来自失真检测器中的第一线性信号路径的信号相反地组合，由于失真消除器的变化而提取输出误差功率。 第一电平检测器检测由误差电力提取器提取的输出误差功率，并且第一控制器控制插入失真消除器中的第一可变衰减器和第一移相器，使得输出误差功率保持为零。 这可以解决常规前馈放大器的问题，因为导频信号的检测电平在最佳操作点变为最小时必须提高导频信号的功率电平，以提高导频信号的检测灵敏度， 导频信号的增加功率降低了采用常规前馈放大器的系统的通信质量。

公开(公告)号：US5707717A

公开(公告)日：1998-01-13

申请号：US209573

申请日：1994-03-10

申请人： Masanori Shibahara ,  Masatoshi Nakayama

发明人： Masanori Shibahara ,  Masatoshi Nakayama

IPC分类号： B29C33/56 ,  C03B11/08 ,  C03B40/00 ,  C03C17/34 ,  C23C16/02 ,  C23C16/26 ,  C03B19/02

CPC分类号： C03B11/086 ,  B29C33/56 ,  C03B40/00 ,  C03C17/3441 ,  C23C16/0272 ,  C23C16/26 ,  B29K2907/04 ,  C03B2215/10 ,  C03B2215/11 ,  C03B2215/12 ,  C03B2215/24 ,  C03B2215/34 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/24983 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： A protectively coated article comprises a substrate of a material selected from the group consisting of alloys containing at least Co, Ni, or Fe, ceramics, and glass and which has only a slight affinity for a diamond-like thin film, an intermediate carbon layer formed on the substrate, the intermediate layer having a hardness Hv in the range from 1000 to 5000 kg/mm2, or harder than the substrate but less hard than a diamond-like thin film to be formed thereon, and a diamond-like thin film formed further thereon. The interposition of the intermediate layer permits the diamond-like thin film to be bound securely to a substrate surface which has a slight affinity for the film.

摘要翻译： 一种保护涂层制品包括选自由至少含有Co，Ni或Fe，陶瓷和玻璃的合金的材料的基底，并且其对于类金刚石薄膜仅具有轻微的亲和力，中间碳层 形成在基板上，中间层的硬度Hv在1000-5000kg / mm2的范围内，或比基板硬，但难于形成在其上的类金刚石薄膜，并且金刚石状薄膜 形成在其上。 中间层的插入允许类金刚石薄膜牢固地结合到对薄膜具有轻微亲和性的基底表面。