摘要:
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.
摘要:
A current perpendicular to plane type magnetoresistive device has a magnetoresistive film, a pair of electrodes which allow a sense current to flow through the magnetoresistive film in a perpendicular direction to the plane thereof, and a biasing film which imparts a biasing magnetic field to the magnetoresistive film in a parallel direction to film plane. The direction of the magnetic field generated by the sense current flowing through the magnetoresistive film in the perpendicular direction to film plane is made substantially anti-parallel to the direction of the biasing magnetic field in a vicinity of a portion of the magnetoresistive film where a signal magnetic flux is introduced.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
Disclosed is a CCP-CPP-GMR head assembly which has: a CCP-CPP-GMR head that includes at least a current control layer having as a microstructure a plurality of truncated cone electric conductors with axes the same as a current direction and an insulator filling between the plurality of truncated cone electric conductors, and in which a surface on which a larger-area basal plane of the plurality of truncated cone electric conductors is greater in number is a first surface of the current control layer and a surface of an opposite side of the first surface is a second surface of the current control layer; and a sense current source providing the CCP-CPP-GMR head with a sense current that flows from the second surface to the first surface, a magnetic recording/reproducing apparatus having such a head, and a specification method of an appropriate sense current direction of the CCP-CPP-GMR head.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
Disclosed is a CCP-CPP-GMR head assembly which has: a CCP-CPP-GMR head that includes at least a current control layer having as a microstructure a plurality of truncated cone electric conductors with axes the same as a current direction and an insulator filling between the plurality of truncated cone electric conductors, and in which a surface on which a larger-area basal plane of the plurality of truncated cone electric conductors is greater in number is a first surface of the current control layer and a surface of an opposite side of the first surface is a second surface of the current control layer; and a sense current source providing the CCP-CPP-GMR head with a sense current that flows from the second surface to the first surface, a magnetic recording/reproducing apparatus having such a head, and a specification method of an appropriate sense current direction of the CCP-CPP-GMR head.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
In a magnetic head having magnetic yoke layers, each magnetic yoke layer includes a yoke projecting portion (2A) projected toward a recording medium, and yoke setback portions (2B) set back from the yoke projecting portion. A first bias magnetic field applying film (5) of an antiferromagnetic material is formed to cover the yoke projecting portion whereas a second bias magnetic field applying film (6) of a ferromagnetic material may be formed on opposite side surfaces of the yoke projecting portion.
摘要:
Disclosed is a CCP-CPP-GMR head assembly which has: a CCP-CPP-GMR head that includes at least a current control layer having as a microstructure a plurality of truncated cone electric conductors with axes the same as a current direction and an insulator filling between the plurality of truncated cone electric conductors, and in which a surface on which a larger-area basal plane of the plurality of truncated cone electric conductors is greater in number is a first surface of the current control layer and a surface of an opposite side of the first surface is a second surface of the current control layer; and a sense current source providing the CCP-CPP-GMR head with a sense current that flows from the second surface to the first surface, a magnetic recording/reproducing apparatus having such a head, and a specification method of an appropriate sense current direction of the CCP-CPP-GMR head.