公开(公告)号：US07196877B2

公开(公告)日：2007-03-27

申请号：US10743130

申请日：2003-12-23

申请人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Tomomi Funayama ,  Kohichi Tateyama ,  Hitoshi Iwasaki ,  Hideaki Fukuzawa

发明人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Tomomi Funayama ,  Kohichi Tateyama ,  Hitoshi Iwasaki ,  Hideaki Fukuzawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3268

摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.

摘要翻译： 磁阻元件包括具有磁化钉扎层，磁化自由层和非磁性中间层的磁阻膜。 磁化被钉扎层的磁化方向基本上固定在外部磁场中，磁化自由层的磁化方向被配置为在外部磁场中改变，并且形成在磁化钉扎层和无磁化之间的非磁性中间层 并且具有第一非金属中间层/金属中间层/第二非金属中间层的堆叠结构。 磁阻元件还包括耦合到磁阻膜的一对电极，并且被配置为在基本垂直于磁阻膜的表面的方向上提供电流。

公开(公告)号：US06724582B2

公开(公告)日：2004-04-20

申请号：US10050543

申请日：2002-01-18

申请人： Tomomi Funayama ,  Masayuki Takagishi ,  Masatoshi Yoshikawa ,  Kohichi Tateyama

发明人： Tomomi Funayama ,  Masayuki Takagishi ,  Masatoshi Yoshikawa ,  Kohichi Tateyama

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01L43/08

摘要： A current perpendicular to plane type magnetoresistive device has a magnetoresistive film, a pair of electrodes which allow a sense current to flow through the magnetoresistive film in a perpendicular direction to the plane thereof, and a biasing film which imparts a biasing magnetic field to the magnetoresistive film in a parallel direction to film plane. The direction of the magnetic field generated by the sense current flowing through the magnetoresistive film in the perpendicular direction to film plane is made substantially anti-parallel to the direction of the biasing magnetic field in a vicinity of a portion of the magnetoresistive film where a signal magnetic flux is introduced.

摘要翻译： 垂直于平面型磁阻器件的电流具有磁阻膜，一对电极，其允许感测电流沿垂直于其平面的方向流过磁阻膜;以及偏置膜，其向磁阻施加偏置磁场 胶片平行于胶片平面。 由磁阻膜在垂直于膜平面的方向上流过的感测电流产生的磁场的方向与磁阻膜的一部分附近的偏置磁场的方向基本反平行，其中信号 引入磁通量。

公开(公告)号：US07126795B2

公开(公告)日：2006-10-24

申请号：US09938611

申请日：2001-08-27

申请人： Tomomi Funayama ,  Kohichi Tateyama ,  Michiko Hara ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

发明人： Tomomi Funayama ,  Kohichi Tateyama ,  Michiko Hara ,  Masatoshi Yoshikawa ,  Hiroaki Yoda

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3183 ,  G11B5/3919 ,  G11B5/3935 ,  G11B2005/3996

摘要： A magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus comprising the magnetic recording head, and a magnetic reproducing apparatus comprising the magnetic reproducing head are described. The magnetic reproducing head having a magnetic gap at a medium-facing surface and includes a pair of magnetic yokes of ferromagnetic material, a magnetoresistance effect film, and a pair of biasing films. One of the pair of magnetic yokes has a magnetic tip at the medium-facing surface and also a rear portion recessed from the medium-facing surface and magnetically coupled to the magnetic tip. The magnetic tip has a first width in a track width direction at the medium-facing surface, and the rear portion has a second width in the track width direction wider than the first width. The magnetoresistance effect film is recessed from the medium-facing surface and is magnetically coupled to the pair of magnetic yokes of ferromagnetic material. The pair of biasing films are recessed from the medium-facing surface and one of the pair of biasing films comprises a hard magnetic material layer disposed adjacent to the rear portion or an antiferromagnetic material layer disposed in contact with the rear portion. The magnetic tip may be provided with appropriate volume of the magnetic biasing from the magnetic biasing film and magnetic domains in the magnetic tip may be sufficiently controlled.

公开(公告)号：US06850393B2

公开(公告)日：2005-02-01

申请号：US09956127

申请日：2001-09-20

申请人： Michiko Hara ,  Tomomi Funayama ,  Masatoshi Yoshikawa ,  Kohichi Tateyama ,  Hiroaki Yoda

发明人： Michiko Hara ,  Tomomi Funayama ,  Masatoshi Yoshikawa ,  Kohichi Tateyama ,  Hiroaki Yoda

IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3916 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49128

摘要： In a yoke type reproducing magnetic head, a magnetoresistance effect film can be arranged in the vicinity of a medium facing surface, so that sensitivity is improved. The yoke type reproducing magnetic head comprises: a pair of magnetic yokes which face each other via a magnetic gap, at least one of the pair of magnetic yokes extending from a medium facing surface to a position retracted from the medium facing surface; a magnetoresistance effect film which has a curved portion protruding toward the medium facing surface in the magnetic gap and which is magnetically connected to the magnetic yokes; and an electrode which is electrically connected to the magnetoresistance effect film.

摘要翻译： 在磁轭型重放磁头中，磁阻效应膜可以布置在面向介质的表面附近，从而提高灵敏度。 磁轭式再现磁头包括：一对磁轭，其经由磁隙彼此相对，所述一对磁轭中的至少一个从介质相对表面延伸到从介质面向表面缩回的位置; 磁阻效应膜，其具有朝向磁隙中的与介质相对的表面突出并且与磁轭磁性连接的弯曲部分; 以及电连接到磁阻效应膜的电极。

公开(公告)号：US07130164B2

公开(公告)日：2006-10-31

申请号：US11061513

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US20060164764A1

公开(公告)日：2006-07-27

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US07046489B2

公开(公告)日：2006-05-16

申请号：US11080485

申请日：2005-03-16

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US06937446B2

公开(公告)日：2005-08-30

申请号：US09981987

申请日：2001-10-19

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US07072153B2

公开(公告)日：2006-07-04

申请号：US10400638

申请日：2003-03-28

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US07791843B2

公开(公告)日：2010-09-07

申请号：US12498202

申请日：2009-07-06

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。