Method for manufacturing polishing pad, polishing pad, and method for polishing wafer
    7.
    发明申请
    Method for manufacturing polishing pad, polishing pad, and method for polishing wafer 有权
    制造抛光垫的方法,抛光垫和抛光晶片的方法

    公开(公告)号:US20080248728A1

    公开(公告)日:2008-10-09

    申请号:US12078525

    申请日:2008-04-01

    IPC分类号: B24D11/00 B24D18/00 B24B1/00

    摘要: There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm2 or above, a polishing pad manufactured by this method, and a method for polishing a wafer by using this polishing pad. There can be provided a method for manufacturing a polishing pad that can stably obtain a wafer with high flatness, etc.

    摘要翻译: 公开了一种用于制造由聚氨酯泡沫垫形成的抛光垫的方法,该抛光垫安装在转台上以抛光晶片,所述方法至少包括以下步骤:切割聚氨酯泡沫块以提供聚氨酯泡沫垫; 对该聚氨酯泡沫垫进行压力加工,压力为15000g / cm 2以上,通过该方法制造的研磨垫,以及使用该抛光垫来研磨晶片的方法 。 可以提供一种能够稳定地获得具有高平坦度等的晶片的抛光垫的制造方法。

    Method for correction of thin film growth temperature
    10.
    发明授权
    Method for correction of thin film growth temperature 有权
    薄膜生长温度校正方法

    公开(公告)号:US06217651B1

    公开(公告)日:2001-04-17

    申请号:US09356319

    申请日:1999-07-16

    IPC分类号: C30B2516

    CPC分类号: C23C16/52 C30B25/16

    摘要: In the process of thin film growth, actual temperature of a substrate is measured and corrected with low cost in short time. With first thin film growth equipment of which a difference between set temperature of a heating source and an actual temperature of the substrate (hereinafter, referred to as temperature characteristic) is known, a first calibration curve representing “thin film growth rate vs. substrate actual temperature” is prepared. Next, thin film growth is conducted at one set temperature T2 with use of second thin film growth equipment whose temperature characteristic is unknown, where a difference from a set temperature T1 reading from the first calibration curve in correspondence to a thin film growth rate G resulting from the thin film growth process is determined. This difference is added to a set temperature T3 in the diffusion controlled temperature region at which the thin film growth is actually performed, making it possible to achieve thin film growth at an accurate substrate surface temperature. The temperature characteristic of the first thin film growth equipment can be known based on a second calibration curve representing “sheet resistance vs. substrate actual temperature” prepared by using a test-use substrate by ion implantation.

    摘要翻译: 在薄膜生长过程中,在短时间内以低成本测量和校正基板的实际温度。 利用第一薄膜生长设备,其中加热源的设定温度与基板的实际温度之间的差异(以下称为温度特性)是已知的,表示“薄膜生长速率对基板实际值”的第一校准曲线 温度“。 接下来,使用温度特性未知的第二薄膜生长设备在一个设定温度T2下进行薄膜生长,其中与从薄膜生长速率G相应的从第一校准曲线读取的设定温度T1的差异导致 从薄膜生长过程确定。 该差异被添加到实际进行薄膜生长的扩散控制温度区域的设定温度T3,使得可以在精确的基板表面温度下实现薄膜生长。 基于通过使用通过离子注入使用测试用基板制备的表示“薄层电阻与基板实际温度”的第二校准曲线,可以知道第一薄膜生长设备的温度特性。