公开(公告)号：US5499938A

公开(公告)日：1996-03-19

申请号：US291937

申请日：1994-08-16

申请人： Masayuki Nakamoto ,  Tomio Ono ,  Tadashi Sakai

发明人： Masayuki Nakamoto ,  Tomio Ono ,  Tadashi Sakai

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： H01J1/3042 ,  H01J9/025

摘要： A field emission cathode which comprises an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer. The method for the production of the field emission cathode comprises a step of forming a first hole pointed toward the leading end thereof on a first supporting substrate, a step of forming the impurity diffusion layer on the surface of the first supporting substrate, a step of forming the insulator layer on the surface of the impurity diffusion layer, a step of depositing an emitter material layer on the surface of the insulator layer including a hole while filling the hole with an emitter material thereby giving rise to a laminate, a step of integrally joining a second supporting substrate to the surface of the emitter material layer of the laminate, a step of removing by etching the first supporting substrate thereby exposing the surface of the impurity diffusion layer including the projection corresponding to the first hole, and a step of selectively removing the impurity diffusion layer and the insulator layer thereby exposing a tip of the projection of the emitter layer.

摘要翻译： 包括发射电子的尖端的发射极和控制栅电极的场致发射阴极由支撑衬底，由发射极材料形成的发射极材料层叠加并快速附着在支撑衬底上，以及 设置有发射极孔，在发射体材料层的表面上形成的绝缘体层，以使发射极突起的前端部分暴露出来，以及在绝缘体层的表面上形成的杂质扩散层， 蚀刻阻挡层。 制造场致发射阴极的方法包括在第一支撑衬底上形成指向其前端的第一孔的步骤，在第一支撑衬底的表面上形成杂质扩散层的步骤， 在杂质扩散层的表面上形成绝缘体层，在包括孔的绝缘体层的表面上沉积发射体材料层的步骤，同时用发射体材料填充孔，从而产生层压体，整体地形成步骤 将第二支撑基板接合到层压体的发射极材料层的表面，通过蚀刻第一支撑基板从而暴露包括对应于第一孔的突起的杂质扩散层的表面的步骤，以及选择性地 去除杂质扩散层和绝缘体层，从而暴露发射极层的突起的尖端。

公开(公告)号：US06281621B1

公开(公告)日：2001-08-28

申请号：US08551429

申请日：1995-11-01

申请人： Masayuki Nakamoto ,  Tomio Ono ,  Tadashi Sakai

发明人： Masayuki Nakamoto ,  Tomio Ono ,  Tadashi Sakai

IPC分类号： H01J130

CPC分类号： H01J1/3042 ,  H01J9/025

摘要： A field emission cathode having an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer.

摘要翻译： 具有发射电子的尖端的发射极和控制栅电极的场发射阴极由支撑衬底，由发射极材料形成的发射极材料层叠加并紧贴在支撑衬底上，并且提供 具有发射极孔，如此形成在发射极材料层的表面上的绝缘体层，以暴露出发射极突起的顶端部分，以及形成在绝缘体层的表面上并能够用作蚀刻的杂质扩散层 塞层。

公开(公告)号：US5483118A

公开(公告)日：1996-01-09

申请号：US209928

申请日：1994-03-14

申请人： Masayuki Nakamoto ,  Tomio Ono

发明人： Masayuki Nakamoto ,  Tomio Ono

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24

CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J9/025

摘要： A field emitter cold cathode has a substrate possessing a first main surface on one side of itself and a second main surface on the other side of itself and has windows formed in itself. An emitter layer is formed on the first main surface side of the substrate, and has emitters disposed at the positions of the windows. A gate electrode layer is formed on the second main surface side of the substrate. In addition, openings are so formed as to enclose untouched the periphery of at least the leading end part of the emitters.

摘要翻译： 场致发射体冷阴极具有在其本身的一侧具有第一主表面和在其自身的另一侧上的第二主表面的基板，并且具有自己形成的窗口。 发射极层形成在基板的第一主表面侧，并且具有放置在窗口的位置处的发射极。 栅极电极层形成在基板的第二主表面侧上。 此外，开口形成为不包围发射器的至少前端部的周边。

公开(公告)号：US5749762A

公开(公告)日：1998-05-12

申请号：US539072

申请日：1995-10-04

申请人： Masayuki Nakamoto ,  Tomio Ono

发明人： Masayuki Nakamoto ,  Tomio Ono

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02

CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J9/025

摘要： A field emitter cold cathode has a substrate possessing a first main surface on one side of itself and a second main surface on the other side of itself and has windows formed in itself. An emitter layer is formed on the first main surface side of the substrate, and has emitters disposed at the positions of the windows. A gate electrode layer is formed on the second main surface side of the substrate. In addition, openings are so formed as to enclose untouched the periphery of at least the leading end part of the emitters.

公开(公告)号：US5727976A

公开(公告)日：1998-03-17

申请号：US404277

申请日：1995-03-14

申请人： Masayuki Nakamoto ,  Tomio Ono

发明人： Masayuki Nakamoto ,  Tomio Ono

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J21/10

CPC分类号： H01J21/105 ,  H01J9/025

摘要： In a method for producing a micro vacuum tube, a dent and an etching stopper layer are formed on one surface of a mold substrate. An emitter layer is deposited on the etching stopper layer and the mold substrate is removed so that the emitter layer has a protuberance covered with the etching stopper layer. Further, a gate electrode layer is formed on the etching stopper layer and the gate electrode layer and the etching stopper layer covering a tip of the protuberance is removed. An interposed insulator layer is formed on the gate electrode layer and the tip of the protuberance and an anode electrode layer is formed on the interposed insulator layer. The interposed insulator layer between the tip of the protuberance and the anode electrode layer is removed so that a space is formed between the tip and the anode electrode layer.

摘要翻译： 在微型真空管的制造方法中，在模具基板的一个面上形成凹陷和蚀刻阻挡层。 在蚀刻停止层上沉积发射极层，去除模具基板，使得发射极层具有被蚀刻阻挡层覆盖的突起。 此外，在蚀刻阻挡层上形成栅电极层，去除覆盖突起前端的栅电极层和蚀刻停止层。 在栅电极层上形成插入的绝缘体层，并且在插入的绝缘体层上形成突起的顶端和阳极电极层。 去除突起前端和阳极电极层之间的插入的绝缘体层，使得在尖端和阳极电极层之间形成空间。

公开(公告)号：US5847496A

公开(公告)日：1998-12-08

申请号：US906334

申请日：1997-08-05

申请人： Masayuki Nakamoto ,  Tomio Ono

发明人： Masayuki Nakamoto ,  Tomio Ono

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/06 ,  H01J21/10 ,  H01J1/30

CPC分类号： H01J21/105 ,  H01J9/025

摘要： A microelectronic field emission device includes a core layer (16) having at least one outward protuberance on a top surface of the core layer, and an emitter layer (15) formed on the core layer to cover at least a top portion of the outward protuberance, the material of the core layer having a larger electrical resistance than the material of the emitter layer, wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer (15) formed on the protuberance culminates to a tip. The microelectronic device may further include a substrate (19), a conductive layer (17), an anode electrode (53) including a phosphor layer, and a gate electrode (21) having an opening thereby exposing the tip of the emitter layer.

摘要翻译： 微电子场致发射器件包括在芯层的顶表面上具有至少一个向外突起的芯层（16），以及形成在芯层上的发射极层（15），以覆盖向外突出部的至少顶部 芯层的材料具有比发射极层的材料更大的电阻，其中向外突起的顶部最终达到尖端，并且形成在突起上的发射极层（15）的一部分最终达到尖端 。 微电子器件还可以包括衬底（19），导电层（17），包括磷光体层的阳极电极（53）和具有开口的栅电极（21），从而暴露发射极层的尖端。

公开(公告)号：US07642542B2

公开(公告)日：2010-01-05

申请号：US11531577

申请日：2006-09-13

申请人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

发明人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/24

CPC分类号： H01L33/02 ,  H01L33/24 ,  H01L33/44 ,  H01L33/58

摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

摘要翻译： 一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

公开(公告)号：US07528535B2

公开(公告)日：2009-05-05

申请号：US11075883

申请日：2005-03-10

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

IPC分类号： H01J1/62

CPC分类号： H01J1/32 ,  H01J9/247 ,  H01J65/046

摘要： A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

摘要翻译： 冷阴极放电灯包括：透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。 每个冷阴极包括：具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

公开(公告)号：US20070046170A1

公开(公告)日：2007-03-01

申请号：US11366468

申请日：2006-03-03

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J1/62

CPC分类号： H01J61/0672 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/72

摘要： A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.

摘要翻译： 用于放电灯的冷阴极包括具有弯曲部分的金属板; 形成在所述金属板的除了所述弯曲部之外的表面上的金刚石膜; 以及安装在金属板上的金属构件。

公开(公告)号：US20070029935A1

公开(公告)日：2007-02-08

申请号：US11495731

申请日：2006-07-31

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J17/02

CPC分类号： H01J21/04 ,  H01J3/021

摘要： The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

摘要翻译： 电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒，形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极，被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元，其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。