公开(公告)号：US07372113B2

公开(公告)日：2008-05-13

申请号：US10880508

申请日：2004-07-01

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L21/314

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US06790723B2

公开(公告)日：2004-09-14

申请号：US09984404

申请日：2001-10-30

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218242

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US06333547B1

公开(公告)日：2001-12-25

申请号：US09478369

申请日：2000-01-06

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06326658B1

公开(公告)日：2001-12-04

申请号：US09404594

申请日：1999-09-24

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.

摘要翻译： 在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加 在后处理中的接触电阻伴随着形成埋藏带的高温。

公开(公告)号：US07129132B2

公开(公告)日：2006-10-31

申请号：US10895087

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01I21/336

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US07098115B2

公开(公告)日：2006-08-29

申请号：US10895088

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/76

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 C 6 C 6）作为形成氮化硅膜的Si原料，其可以与氧化硅膜的蚀刻速率差别很大。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06774462B2

公开(公告)日：2004-08-10

申请号：US10278882

申请日：2002-10-24

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US20070215958A1

公开(公告)日：2007-09-20

申请号：US11798593

申请日：2007-05-15

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L29/94

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/40117 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US07060555B2

公开(公告)日：2006-06-13

申请号：US10895144

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US06772045B2

公开(公告)日：2004-08-03

申请号：US10231019

申请日：2002-08-30

申请人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

发明人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

IPC分类号： G06F1900

CPC分类号： H04L12/66 ,  Y10S438/905

摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

摘要翻译： 一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。