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    WIRELESS FETAL MONITORING SYSTEM
    1.
    发明申请
    WIRELESS FETAL MONITORING SYSTEM 有权
    无线FET监控系统

    公开(公告)号：US20120232398A1

    公开(公告)日：2012-09-13

    申请号：US13290002

    申请日：2011-11-04

    申请人： Masoud Roham ,  Enrique Saldivar ,  Srinivas Raghavan ,  Mehran Mehregany ,  Mitul Shah

    发明人： Masoud Roham ,  Enrique Saldivar ,  Srinivas Raghavan ,  Mehran Mehregany ,  Mitul Shah

    IPC分类号： A61B5/024 ,  A61B5/0444 ,  A61B7/00 ,  A61B8/00 ,  A61B8/02

    CPC分类号： A61B5/0011 ,  A61B5/0022 ,  A61B5/02411 ,  A61B5/02438 ,  A61B5/02444 ,  A61B5/0245 ,  A61B5/033 ,  A61B5/04882 ,  A61B5/4356 ,  A61B5/6832 ,  A61B8/0866 ,  A61B8/4227 ,  A61B8/4472 ,  A61B8/488 ,  A61B8/565

    摘要： A wireless fetal and maternal monitoring system includes a fetal sensor unit adapted to receive signals indicative of a fetal heartbeat, the sensor optionally utilizing a Doppler ultrasound sensor. A short-range transmission unit sends the signals indicative of fetal heartbeat to a gateway unit, either directly or via an auxiliary communications unit, in which case the electrical coupling between the short-range transmission unit and the auxiliary communications unit is via a wired connection. The system includes a contraction actuator actuatable upon a maternal uterine contraction, which optionally is a EMG sensor. A gateway device provides for data visualization and data securitization. The gateway device provides for remote transmission of information through a data communication network. A server adapted to receive the information from the gateway device serves to store and process the data, and an interface system to permits remote patient monitoring.

    摘要翻译： 无线胎儿和母亲监测系统包括适于接收指示胎儿心跳的信号的胎儿传感器单元，所述传感器可选地使用多普勒超声传感器。 短距离传输单元直接地或经由辅助通信单元将指示胎心跳信号的信号发送到网关单元，在这种情况下，短程传输单元和辅助通信单元之间的电耦合经由有线连接 。 该系统包括可在母体子宫收缩时致动的收缩致动器，其可选地是EMG传感器。 网关设备提供数据可视化和数据证券化。 网关设备通过数据通信网络提供信息的远程传输。 适于从网关设备接收信息的服务器用于存储和处理数据，以及允许远程病人监视的接口系统。

    Method of fabricating metal-bearing integrated circuit structures having low defect density
    3.
    发明授权
    Method of fabricating metal-bearing integrated circuit structures having low defect density 有权
    制造具有低缺陷密度的金属轴承集成电路结构的方法

    公开(公告)号：US08258041B2

    公开(公告)日：2012-09-04

    申请号：US12816381

    申请日：2010-06-15

    申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    IPC分类号： H01L21/20

    CPC分类号： H01L28/40 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32139

    摘要： A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

    摘要翻译： 一种在集成电路中制造含金属结构的方法，例如使用导电金属化合物的金属 - 多晶硅电容器。 通过使用包括使用氟基蚀刻化学物质实现主要化学特征的硬掩模的等离子体蚀刻的方法，使在硬掩模材料的蚀刻期间形成的有机金属聚合物的缺陷最小化。 使用硬掩模光刻胶的低温液相条带代替灰分防止在等离子体蚀刻期间形成的聚合物的进一步交联。 使用氢氧化铵和过氧化氢的热的完全浓缩的混合物来蚀刻含金属材料允许短时间的蚀刻时间，其特别地缩短了以大约30％或更大的氮浓度沉积的氮化钽膜。

    METHOD OF FABRICATING METAL-BEARING INTEGRATED CIRCUIT STRUCTURES HAVING LOW DEFECT DENSITY
    6.
    发明申请
    METHOD OF FABRICATING METAL-BEARING INTEGRATED CIRCUIT STRUCTURES HAVING LOW DEFECT DENSITY 有权
    制造具有低缺陷密度的金属轴承集成电路结构的方法

    公开(公告)号：US20110306207A1

    公开(公告)日：2011-12-15

    申请号：US12816381

    申请日：2010-06-15

    申请人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    发明人： Srinivas Raghavan ,  Kalyan Cherukuri ,  Thomas E. Lillibridge ,  Richard A. Faust

    IPC分类号： H01L21/3205

    CPC分类号： H01L28/40 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32139

    摘要： A method of fabricating metal-bearing structures in an integrated circuit such as metal-polysilicon capacitors using conductive metal compounds. Defects due to organometallic polymers formed during the etch of a hard mask material are minimized by using a process that includes a plasma etch for the hard mask that achieves a predominantly chemical character using a fluorine-based etch chemistry. Using a low-temperature liquid-phase strip of the hard mask photoresist instead of an ash prevents further cross-linking of polymers formed during the plasma etch. Etching the metal-bearing material using a hot fully-concentrated mixture of ammonium hydroxide and hydrogen peroxide allows short etch times that are particularly shortened for tantalum nitride films deposited with a nitrogen concentration of about 30 percent or greater.

    摘要翻译： 一种在集成电路中制造含金属结构的方法，例如使用导电金属化合物的金属 - 多晶硅电容器。 通过使用包括使用氟基蚀刻化学物质实现主要化学特征的硬掩模的等离子体蚀刻的方法，使在硬掩模材料的蚀刻期间形成的有机金属聚合物的缺陷最小化。 使用硬掩模光刻胶的低温液相条带代替灰分防止在等离子体蚀刻期间形成的聚合物的进一步交联。 使用氢氧化铵和过氧化氢的热的完全浓缩的混合物来蚀刻含金属材料允许短时间的蚀刻时间，其特别地缩短了以大约30％或更大的氮浓度沉积的氮化钽膜。