Molybdenum/molybdenum disulfide metal articles and methods for producing same
    3.
    发明授权
    Molybdenum/molybdenum disulfide metal articles and methods for producing same 有权
    钼/二硫化钼金属制品及其制造方法

    公开(公告)号:US08038760B1

    公开(公告)日:2011-10-18

    申请号:US12833458

    申请日:2010-07-09

    IPC分类号: B22F1/00 B22F3/00

    摘要: A method for producing a metal article according to one embodiment may involve the steps of: Providing a composite metal powder including a substantially homogeneous dispersion of molybdenum and molybdenum disulfide sub-particles that are fused together to form individual particles of the composite metal powder; and compressing the molybdenum/molybdenum disulfide composite metal powder under sufficient pressure to cause the mixture to behave as a nearly solid mass.

    摘要翻译: 根据一个实施方案的金属制品的制造方法可以包括以下步骤:提供包含熔融在一起以形成复合金属粉末的单个颗粒的钼和二硫化钼亚颗粒的基本上均匀的分散体的复合金属粉末; 并在足够的压力下压制钼/二硫化钼复合金属粉末,使混合物表现为接近固体的质量。

    Methods for producing molybdenum/molybdenum disulfide metal articles
    4.
    发明授权
    Methods for producing molybdenum/molybdenum disulfide metal articles 有权
    生产钼/钼二硫化物金属制品的方法

    公开(公告)号:US08834785B2

    公开(公告)日:2014-09-16

    申请号:US13180217

    申请日:2011-07-11

    摘要: A method for producing a metal article according to one embodiment may involve the steps of: Providing a composite metal powder including a substantially homogeneous dispersion of molybdenum and molybdenum disulfide sub-particles that are fused together to form individual particles of the composite metal powder; and compressing the molybdenum/molybdenum disulfide composite metal powder under sufficient pressure to cause the mixture to behave as a nearly solid mass.

    摘要翻译: 根据一个实施方案的金属制品的制造方法可以包括以下步骤:提供包含熔融在一起以形成复合金属粉末的单个颗粒的钼和二硫化钼亚颗粒的基本上均匀的分散体的复合金属粉末; 并在足够的压力下压制钼/二硫化钼复合金属粉末,使混合物表现为接近固体的质量。

    Method of removing debris from cleaning pads in work piece cleaning equipment
    8.
    发明授权
    Method of removing debris from cleaning pads in work piece cleaning equipment 有权
    从工件清洗设备清洗垫中清除碎屑的方法

    公开(公告)号:US06461441B1

    公开(公告)日:2002-10-08

    申请号:US09851866

    申请日:2001-05-09

    IPC分类号: B08B100

    CPC分类号: H01L21/67046 Y10S134/902

    摘要: The cleaning pads (102, 104) that are used to clean work pieces (200), such as semiconductor wafers, are cyclically compressed against one another and rinsed with a rinsing fluid. By cyclically compressing the cleaning pads (102, 104) together and rinsing them, the debris that the cleaning pads remove from the work pieces (200) and that becomes embedded in, and adhered to, the cleaning pads (102, 104) is subsequently removed therefrom.

    摘要翻译: 用于清洁诸如半导体晶片的工件(200)的清洁垫(102,104)彼此循环地压缩并用冲洗流体冲洗。 随后将清洁垫(102,104)周期性地压缩在一起并将其清洗,随后将清洁垫从工件(200)上移除并嵌入清洁垫(102,104)中并粘附到清洁垫(102,104)上的碎屑 从中移除。

    Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece
    9.
    发明授权
    Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece 失效
    工件的化学机械平面化(CMP)和化学机械清洁(CMC)的方法

    公开(公告)号:US06875087B2

    公开(公告)日:2005-04-05

    申请号:US10438030

    申请日:2003-05-13

    IPC分类号: B08B1/04 B24B37/04 B24B1/00

    CPC分类号: B08B1/04 B24B37/042

    摘要: A method is provided for planarizing/polishing and subsequently in situ cleaning a surface of a work piece such as a semiconductor wafer. The method includes the steps of planarizing/polishing the surface of a work piece by subjecting a work piece surface to a chemical mechanical planarization/polishing (CMP) process on a chemical mechanical planarization/polishing platen such that the planarization/polishing process leaves the surface of the work piece hydrophobic. The planarization/polishing process is followed by a chemical mechanical cleaning (CMC) process in which the planarized/polished surface of the work piece is subjected to the cleaning process on the same chemical mechanical planarization/polishing platen such that the cleaning process leaves the surface of the work piece hydrophilic.

    摘要翻译: 提供了一种用于平面化/抛光和随后原位清洁诸如半导体晶片的工件的表面的方法。 该方法包括以下步骤:通过在化学机械平面化/抛光台板上对工件表面进行化学机械平面化/抛光(CMP)工艺来平坦化/抛光工件的表面,使得平面化/抛光工艺离开表面 的工件疏水。 平面化/抛光过程之后是化学机械清洁(CMC)工艺,其中工件的平面化/抛光表面在相同的化学机械平面化/抛光台板上进行清洁处理,使得清洁过程离开表面 的工件亲水。

    Method and apparatus for cleaning workpieces with uniform relative velocity
    10.
    发明授权
    Method and apparatus for cleaning workpieces with uniform relative velocity 有权
    用于以均匀相对速度清洁工件的方法和设备

    公开(公告)号:US06502271B1

    公开(公告)日:2003-01-07

    申请号:US09492020

    申请日:2000-01-26

    申请人: Yakov Epshteyn

    发明人: Yakov Epshteyn

    IPC分类号: A46B1302

    CPC分类号: H01L21/67046 B08B1/04

    摘要: A method and apparatus for cleaning a wafer in a dual brush cleaning system is disclosed. Two brushes, preferably made of PVA and wetted by cleaning fluids, are positioned opposite one another and spaced apart enough to allow a portion of a wafer to be inserted between their working surfaces and make frictional engagement with them. The top brush is rotated at a first speed and the bottom brush is rotated at a second faster speed sufficient for the freely rotating wafer to rotate at the same speed and in the same direction as the top brush. The bottom brush may have raised areas on its surface to assist in efficiently gripping and rotating the wafer. A common rotation speed and direction causes a uniform relative velocity between the top brush and the wafer that results in an improved cleaning operation.

    摘要翻译: 公开了一种在双刷清洁系统中清洁晶片的方法和装置。 优选由PVA制成并用清洁液润湿的两个刷子彼此相对设置并间隔开,以允许晶片的一部分插入在其工作表面之间并与它们摩擦接合。 顶部刷子以第一速度旋转,并且底部刷子以足以使自由旋转的晶片以与顶部刷子相同的速度和相同的方向旋转的第二更快的速度旋转。 底部刷可能在其表面上具有凸起区域以帮助有效地夹紧和旋转晶片。 常见的旋转速度和方向导致顶刷和晶片之间的均匀的相对速度导致改进的清洁操作。